Results 1 to 10 of about 6,551 (169)

Charge Sharing and Charge Loss in High-Flux Capable Pixelated CdZnTe Detectors [PDF]

open access: yesSensors, 2021
Cadmium zinc telluride (CdZnTe) detectors are known to suffer from polarization effects under high photon flux due to poor hole transport in the crystal material.
Kjell A. L. Koch-Mehrin   +4 more
doaj   +2 more sources

Characterization of the Uniformity of High-Flux CdZnTe Material [PDF]

open access: yesSensors, 2020
Since the late 2000s, the availability of high-quality cadmium zinc telluride (CdZnTe) has greatly increased. The excellent spectroscopic performance of this material has enabled the development of detectors with volumes exceeding 1 cm3 for use in the ...
Matthew Charles Veale   +13 more
doaj   +2 more sources

Modelling Polarization Effects in a CdZnTe Sensor at Low Bias [PDF]

open access: yesSensors, 2023
Semi-insulating CdTe and CdZnTe crystals fabricated into pixelated sensors and integrated into radiation detection modules have demonstrated a remarkable ability to operate under rapidly changing X-ray irradiation environments.
Jindřich Pipek   +3 more
doaj   +2 more sources

Fabrication of Small-Pixel CdZnTe Sensors and Characterization with X-rays [PDF]

open access: yesSensors, 2021
Over the past few years, sensors made from high-Z compound semiconductors have attracted quite some attention for use in applications which require the direct detection of X-rays in the energy range 30–100 keV.
Stergios Tsigaridas   +6 more
doaj   +2 more sources

Influence of temperature and excitation density on carrier dynamics in CdZnTe quantum dots [PDF]

open access: yesScientific Reports
This study investigates the carrier dynamics of self-assembled CdZnTe quantum dots (QDs) using time-resolved photoluminescence measurements, specifically focusing on the effects of temperature and excitation density.
Minh Tan Man, Hong Seok Lee
doaj   +2 more sources

Investigation on X-ray Photocurrent Response of CdZnTe Photon Counting Detectors

open access: yesSensors, 2020
Counting rate is an important factor for CdZnTe photon counting detectors as high-flux devices. Until recently, there has been a lack of knowledge on the relationship between X-ray photocurrent response and the photon counting performance of CdZnTe ...
Yingrui Li   +5 more
doaj   +1 more source

Investigation on the Rapid Annealing of Ti-Au Composite Electrode on n-Type (111) CdZnTe Crystals

open access: yesCrystals, 2020
In this paper, the ohmic properties of Ti, Al, and Ti-Au composite electrodes on n-type (111) CdZnTe crystal deposited by vacuum evaporation method were first analyzed, and then the rapid annealing of Ti-Au electrode under Ar atmosphere with different ...
Haozhi Shi   +6 more
doaj   +1 more source

Forming of CdZnTe thin films grown by hot wall epitaxy and their properties

open access: yesФізика і хімія твердого тіла, 2021
In this work morphological, X-ray structural and optical studies of CdZnTe films grown by hot wall epitaxy method at relatively low substrate temperatures were performed. Possible mechanisms and processes of self-organization that occur during the growth
M. Vuichyk   +4 more
doaj   +1 more source

A mathemetical model of the charge accumulation and the spectrum formation in detectors on the basis of CdTe (CdZnTe) at the gamma-quanta irradiation [PDF]

open access: yesФизико-химические аспекты изучения кластеров, наноструктур и наноматериалов, 2017
The features of spectrum formation in CdTe (CdZnTe) detectors under gamma quanta radiation are presented. The main characteristics of a semiconductor detector, i.e. the energy resolution and the registration efficiency, are determined. The results can be
A.A. Smirnov   +3 more
doaj   +1 more source

Low-temperature deposition of Cd1-xZnxTe layers by laser sputtering and their physical properties

open access: yesФізика і хімія твердого тіла, 2022
CdZnTe films were grown by the method of modulated infrared laser deposition at a substrate temperature Tsub ≤ 1200C from appropriate sources on oriented single-crystal substrates Si, GaAs, InSb in the same technological conditions in one technological ...
Yu.S. Gromovyi   +2 more
doaj   +1 more source

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