Results 121 to 130 of about 50,543 (262)

Photoinduced asymmetric charge trapping in a symmetric tetraazapyrene-fused bis(tetrathiafulvalene) conjugate. [PDF]

Chem Sci, 2023
Zhou P, Nazari Haghighi Pashaki M, Frey HM, Hauser A, Decurtins S, Cannizzo A, Feurer T, Häner R, Aschauer U, Liu SX.   +9 more
europepmc   +1 more source

Light‐Induced Field‐Tunneling Synapses in Solution‐Processed Van Der Waals Heterostructures for Scalable, Retina‐Inspired Optical Sensing

Advanced Functional Materials, EarlyView.
A scalable, solution‐processed WSe2/ZrO2‐x van der Waals heterostructure realizes a light‐induced field‐tunneling synapse (LIFTS) that activates exclusively under bright illumination, emulating the photopic adaptation of the human retina at the device level.
Kijeong Nam, Jihyun Kim, Soobeen Ji, In Soo Kim, Sejin Kim, Eungseon Yeon, Do Kyung Hwang, Iva Plutnarová, Zdeněk Sofer, Sang Min Won, Joohoon Kang   +10 more
wiley   +1 more source

An Artificial Synaptic Device Based on InSe/Charge Trapping Layer/h-BN Heterojunction with Controllable Charge Trapping via Oxygen Plasma Treatment. [PDF]

Micromachines (Basel)
Wang Q, Wang J, Lu M, Ma T, Li J.
europepmc   +1 more source

Preparation of Remote Plasma Atomic Layer-Deposited HfO₂ Thin Films with High Charge Trapping Densities and Their Application in Nonvolatile Memory Devices. [PDF]

Nanomaterials (Basel), 2023
Yoo JH, Park WJ, Kim SW, Lee GR, Kim JH, Lee JH, Uhm SH, Lee HC.   +7 more
europepmc   +1 more source

Memristive‐Gated RC‐Delay Synaptic Transistors for Time‐Encoded Analog in‐Memory Computing

Advanced Functional Materials, EarlyView.
A Memristive‐Gated Transistor for Time‐Encoded Analog In‐Memory Computing — By exploiting the RC delay of a self‐rectifying interface‐type memristor, nonlinear I–V distortion is structurally bypassed, enabling 3‐bit nonvolatile memory, spike‐timing‐based analog encoding, and hardware‐calibrated reservoir‐computing validation within a unified device ...
Yun‐Seo Shin, Eunjoo Yoo, Ki‐Hoon Son, Hyun‐Sik Kim, Dae‐Hee Han, Jeong Hyeon Son, Seung Hwan Lee, Hong‐Sub Lee   +7 more
wiley   +1 more source

Influence of programming-pulse properties on weight-update characteristics of charge-trapping IGZO synaptic transistors. [PDF]

Sci Rep
Ko Y, Ryu J, Pi J, Cha D, Lee S.
europepmc   +1 more source

Impact of Charge-Trapping Effects on Reliability Instability in Al_xGa_1-xN/GaN High-Electron-Mobility Transistors with Various Al Compositions. [PDF]

Materials (Basel), 2023
Amir W, Chakraborty S, Kwon HM, Kim TW.
europepmc   +1 more source

Boosting Conversion Efficiency in Zn3P2/InP Solar Cells Via Nanoscale Junction Engineering

Advanced Functional Materials, EarlyView.
This study demonstrates the efficacy of selective area epitaxy (SAE) in enhancing the conversion efficiency of a Zn3P2${\rm Zn}_3{\rm P}_2$/InP heterojunction solar cell. The impact of the SAE pattern dimensions on the performance parameters is investigated. Small size opening limits Jsc because of current crowding whereas large size opening limits Voc
Raphael Lemerle, Valerio Piazza, Andrea Filippo, Melanie Micali, Luna Warzawa, Thomas Hagger, Kamil Wodzislawski, Julien Hurni, Valentin Biselli, Ioannis Kalogerakis, Konstantinos Rogdakis, George Viskadouros, Emmanuel Kymakis, Esther Alarcon‐Llado, Anna Fontcuberta i Morral   +14 more
wiley   +1 more source

Suppression of charge-trapping-induced hysteresis enabling hysteresis-free Te nanowire field effect transistors. [PDF]

iScience
Yin Y, Zhou W, Tang D.
europepmc   +1 more source

Charge-Trapping-Induced Hysteresis Effects in Highly Doped Silicon Metal-Oxide-Semiconductor Structures. [PDF]

Materials (Basel), 2022
Wiśniewski P, Majkusiak B.
europepmc   +1 more source