Results 131 to 140 of about 53,849 (259)

An Artificial Synaptic Device Based on InSe/Charge Trapping Layer/h-BN Heterojunction with Controllable Charge Trapping via Oxygen Plasma Treatment. [PDF]

Micromachines (Basel)
Wang Q, Wang J, Lu M, Ma T, Li J.
europepmc   +1 more source

Photoinduced asymmetric charge trapping in a symmetric tetraazapyrene-fused bis(tetrathiafulvalene) conjugate. [PDF]

Chem Sci, 2023
Zhou P, Nazari Haghighi Pashaki M, Frey HM, Hauser A, Decurtins S, Cannizzo A, Feurer T, Häner R, Aschauer U, Liu SX.   +9 more
europepmc   +1 more source

Hopping‐Mediated Zero‐Bias Photocharge Retention in Solution‐Processed Van Der Waals Heterostructures

Advanced Functional Materials, EarlyView.
Liquid–liquid interface assembly enables the fabrication of solution‐processed MoS2 and WSe2 centimeter‐scale, nanometer‐thick type‐II heterostructures on paper. Interfacial charge separation and hopping‐limited recombination produce rectification and persistent photocharge retention at zero bias.
Aniello Pelella, Andrea Sessa, Yi‐Chen Tsai, Xuzhao Liu, Abdul Mannan, George Greaves, Yahya Saboon, Ben Spencer, Antonio Di Bartolomeo, Cinzia Casiraghi, Jessica Boland, Alessandro Grillo   +11 more
wiley   +1 more source

Influence of programming-pulse properties on weight-update characteristics of charge-trapping IGZO synaptic transistors. [PDF]

Sci Rep
Ko Y, Ryu J, Pi J, Cha D, Lee S.
europepmc   +1 more source

Preparation of Remote Plasma Atomic Layer-Deposited HfO₂ Thin Films with High Charge Trapping Densities and Their Application in Nonvolatile Memory Devices. [PDF]

Nanomaterials (Basel), 2023
Yoo JH, Park WJ, Kim SW, Lee GR, Kim JH, Lee JH, Uhm SH, Lee HC.   +7 more
europepmc   +1 more source

Hybrid Ferroelectric Tunnel Junctions with Intrinsic Nonlinearity and Self‐Rectification via Interfacial Reconstruction

Advanced Functional Materials, EarlyView.
Rapid thermal annealing reconstructs the BCFO/Nb:STO interface into an atomically thin reconstructed interfacial layer, which reshapes the tunneling barrier and converts a high‐TER ferroelectric tunnel junction into an intrinsically nonlinear, self‐rectifying device.
Hojin Lee, Joonbong Lee, Jinho Byun, Sang‐Hyeok Yang, A young Cho, Sangwoo Lee, Dae Haa Ryu, Hyunbin Chung, Hee Seo Yun, Moon Seop Choi, Yesul Choi, Sungkyun Park, Min‐Hyung Jung, Dongwon Lee, Yoon‐Uk Heo, Hu Young Jeong, Hongseok Kim, Shinhyeong Lee, Yunseok Kim, Young‐Min Kim, Jaekwang Lee, Taekjib Choi   +21 more
wiley   +1 more source

Suppression of charge-trapping-induced hysteresis enabling hysteresis-free Te nanowire field effect transistors. [PDF]

iScience
Yin Y, Zhou W, Tang D.
europepmc   +1 more source

Impact of Charge-Trapping Effects on Reliability Instability in Al_xGa_1-xN/GaN High-Electron-Mobility Transistors with Various Al Compositions. [PDF]

Materials (Basel), 2023
Amir W, Chakraborty S, Kwon HM, Kim TW.
europepmc   +1 more source

Effects of LLZO Microstructure Porosity, LLZO/Li‐Metal Interfacial Polarization Resistance, and Applied Areal Current Density on Li‐Metal Dendrite Formation in LLZO Bilayer Symmetric Cells

Advanced Functional Materials, EarlyView.
The effects of solid‐state electrolyte architecture and electrolyte/electrode interfacial polarization resistance on Critical Current Density and the risks for “interfacial” and “internal” Li‐metal dendrite formation were investigated in simulations of FIB‐reconstructed porous‐dense Li7La3Zr2O12 (LLZO) “bilayers”, providing insight for full cells ...
Tanner R. Hamann, Jon O'Neill, Eric D. Wachsman   +2 more
wiley   +1 more source

Dipole-Driven Charge Trapping in Monolayer Janus MoSSe for Ultrathin Nonvolatile Memory Devices. [PDF]

Nanomicro Lett
Ko EB, Sung J, Choi SY, Hassan Y, Bae JJ, Kim J, Kim HY, Lee E, Choi MS, Kim HH.   +9 more
europepmc   +1 more source