Results 191 to 200 of about 20,386 (260)

Phase Diagrams and Piezoelectric Properties of Wurtzite Al1−x−yScxGdyN Heterostructural Alloys

Advanced Science, EarlyView.
This study demonstrates ferroelectricity and piezoelectric properties improvement of quaternary wurtzite Al1−x−yScxGdyN${\rm Al}_{1-x-y}{\rm Sc}_x{\rm Gd}_y{\rm N}$ films, guided by density functional theory calculations. Wurtzite Al1−x−yScxGdyN${\rm Al}_{1-x-y}{\rm Sc}_x{\rm Gd}_y{\rm N}$ films have a high optical bandgap, enhanced piezoelectric ...
Julia L. Martin, Cheng‐Wei Lee, Nate S.P. Bernstein, Thi Nguyen, Ande Bryan, Eli Cooper, John S. Mangum, Sage R. Bauers, Andriy Zakutayev, Keisuke Yazawa, Prashun Gorai, Rebecca W. Smaha   +11 more
wiley   +1 more source

Co‐Delivery of Sustained Release Chondroitinase ABC‐37 With Human iPSC‐Derived Neural Progenitors Promotes Transplant Survival and Functional Recovery in a Rodent Model of Stroke

Advanced Science, EarlyView.
A regenerative strategy for stroke combines human stem cell–derived neural progenitor cells with sustained release of a matrix‐modifying, thermostable chondroitinase ABC‐37 enzyme. In a rat model of stroke, co‐delivery enhanced transplanted cell survival and neuronal differentiation, degraded inhibitory extracellular matrix components, and improved ...
Nitzan Letko Khait, David Xinzheyang Li, Keyi Guo, Hong Cui, Quinton Sirianni, Dhana Abdo, Cindi M. Morshead, Molly S. Shoichet   +7 more
wiley   +1 more source

TOLLIP Inhibits Psoriasis Progression via Suppressing PKM2‐Mediated Glycolysis in Keratinocytes

Advanced Science, EarlyView.
In this study, we identify TOLLIP as a critical regulator of psoriasis pathogenesis through its modulation of glycolytic metabolism. Our findings establish the TOLLIP‐PKM2‐glycolysis axis as a key mechanism linking metabolic reprogramming to psoriasis pathogenesis, and propose TOLLIP as a promising therapeutic target.
Xiuhuan Jiang, Guoying Miao, Na Shen, Qingxia Han, Xiaoru Han, Zichang Qiao, Kexin Feng, Zhuo Tan, Yaguang Wang, Xiuhua Liu, Chen Wu, Zhenzhen Yan   +11 more
wiley   +1 more source

High Removal Rates and Atomically Smooth Surfaces Are Achieved on Silicon Wafers Using the New SiO₂@ZrO₂ Core-Shell Abrasive. [PDF]

Nanomaterials (Basel)
Wang M, He W, Feng K, Ye R, Wang Y, Guan W, Qiu F, Fan X, Liu R.   +8 more
europepmc   +1 more source

Limiting PcV and Tribological Performance of Mechanical Seals with Hard-Hard and Soft-Hard Tribopairs Under Water Lubrication. [PDF]

Materials (Basel)
Ren X, Song H, Li H, Zhou Y, Li M, Yang S, Liu C, Lu Y, Li X, Jiang N, Nishimura K.   +10 more
europepmc   +1 more source

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Electro-chemical mechanical polishing of copper and chemical mechanical polishing of glass

Journal of Materials Processing Technology, 2004
Abstract In IC and optical manufacturing some of the materials that are polished after grinding are Si, Ge, Pyrex and BK 7 glass. In the case of Al, Cu and W, they are deposited and are CMP polished. The polishing process used on IC wafers is chemical mechanical polishing (CMP) that has in built facilities for planarizing as well. There are two major
Venkatesh, Vasisht C., Sudin, Izman, Mahadevan, S. C.   +2 more
openaire   +2 more sources

Mechanical Mechanisms of Chemical Mechanical Polishing

Advanced Materials Research, 2008
This paper describes a mechanical mechanism of chemical mechanical polishing (CMP) and the model is applied to the polishing of silicon substrates by polyurethane pads and slurries containing fumed silica as is typically done in the manufacture of integrated circuits.
Steven Danyluk, Sum Huan Ng
openaire   +1 more source

Surface Conformable Polishing Mechanism for Chemical Mechanical Polishing

Journal of The Electrochemical Society, 2009
Surface conformable polishing mechanism, which means a uniform removal mechanism conforming to wafer thickness variation, was developed for chemical mechanical polishing. The polishing mechanism provides both global uniform removal regardless of wafer curvature and local planarization to protruding parts on a patterned surface.
Takashi Fujita, Junji Watanabe
openaire   +1 more source

Mechanism of Ge2Sb2Te5 chemical mechanical polishing

Applied Surface Science, 2012
Abstract We report the exploration of Ge2Sb2Te5 (GST) chemical mechanical polishing (CMP) mechanism. Static etching experiments of GST film were first conducted in two typical silica-based slurries (pH 2 and pH 11). To investigate the chemical nature of GST in different chemical environments, solubility of GST in slurries and also the zeta potentials
Liangyong Wang, Zhitang Song, Min Zhong, Weili Liu, Weixia Yan, Fei Qin, Aodong He, Bo Liu   +7 more
openaire   +1 more source

Chemical Mechanical Polishing

2012
Chemical mechanical planarization (CMP) has emerged as an indispensable processing technique for planarization in submicron multilevel VLSI. An analytic model of the material removal rate is proposed for CMP. The effects of applied pressure and polishing velocity are derived by considering the chemical reaction as well as the mechanical bear-and-shear ...
H. Y. Tsai, H. Hocheng, Y. L. Huang
openaire   +1 more source