Results 191 to 200 of about 19,083 (259)

Large‐Scale Growth of Self‐Poled Ferroelectric Rashba Semiconductor α‐GeTe(111) Thin Films: A Crucial Step Towards Future CMOS‐Compatible Ferroelectric Spintronic Devices

Advanced Science, EarlyView.
Ferroelectric Rashba semiconductors promise ultralow‐power devices but lack industry‐quality films. This work demonstrates CMOS‐compatible fabrication of high‐quality α‐GeTe(111) films via magnetron sputtering, enabled by a 5 nm Sb2Te3 seed layer. Structural and ferroelectric analyses show robust, switchable polarization comparable to MBE films, paving
Jules Lagrave, Nicolas Bernier, Thomas Jalabert, Yoann Brûlé, Damien Térébénec, Pierre Meilleur, Hervé Roussel, Jean‐Baptiste Dory, Oussama J. Mouawad, Thibault Chommaux, Cristian Mocuta, Dominique Thiaudière, Laurent Vila, Françoise Hippert, Pierre Noé   +14 more
wiley   +1 more source

Chemical Mechanical Lapping of 316 Based on Solid-Phase Fenton Reaction. [PDF]

Materials (Basel)
Guo L, Zhou K, Tian Y, Bao Z, Zhang LA, Wang J, Zhao T.   +6 more
europepmc   +1 more source

Lapping of Soft-Brittle Lithium Niobate Crystal with Fixed Abrasive Pad. [PDF]

Materials (Basel)
Zhu N, Gao X, Tang C, Chen J, Zhu Y.
europepmc   +1 more source

Abrasive for Chemical Mechanical Polishing

, 2018
openaire   +2 more sources

Laser-Based Polishing of Additively Manufactured PA12 and PAEK Polymer Components Using a Robotic System. [PDF]

Polymers (Basel)
Uluz E, Metz L, Hedwig L, Bremen S.
europepmc   +1 more source

Effectiveness of electropolishing step on elimination of upstream manufacturing material residues on metallic orthopaedic medical device. [PDF]

Front Med Technol
Godlewska K, Graham CJ, Frohbergh M, Kalyan S, Viswanadha R, Hasgall P.   +5 more
europepmc   +1 more source

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Electro-chemical mechanical polishing of copper and chemical mechanical polishing of glass

Journal of Materials Processing Technology, 2004
Abstract In IC and optical manufacturing some of the materials that are polished after grinding are Si, Ge, Pyrex and BK 7 glass. In the case of Al, Cu and W, they are deposited and are CMP polished. The polishing process used on IC wafers is chemical mechanical polishing (CMP) that has in built facilities for planarizing as well. There are two major
Venkatesh, Vasisht C., Sudin, Izman, Mahadevan, S. C.   +2 more
openaire   +2 more sources

Mechanical Mechanisms of Chemical Mechanical Polishing

Advanced Materials Research, 2008
This paper describes a mechanical mechanism of chemical mechanical polishing (CMP) and the model is applied to the polishing of silicon substrates by polyurethane pads and slurries containing fumed silica as is typically done in the manufacture of integrated circuits.
Steven Danyluk, Sum Huan Ng
openaire   +1 more source

Surface Conformable Polishing Mechanism for Chemical Mechanical Polishing

Journal of The Electrochemical Society, 2009
Surface conformable polishing mechanism, which means a uniform removal mechanism conforming to wafer thickness variation, was developed for chemical mechanical polishing. The polishing mechanism provides both global uniform removal regardless of wafer curvature and local planarization to protruding parts on a patterned surface.
Takashi Fujita, Junji Watanabe
openaire   +1 more source

Mechanism of Ge2Sb2Te5 chemical mechanical polishing

Applied Surface Science, 2012
Abstract We report the exploration of Ge2Sb2Te5 (GST) chemical mechanical polishing (CMP) mechanism. Static etching experiments of GST film were first conducted in two typical silica-based slurries (pH 2 and pH 11). To investigate the chemical nature of GST in different chemical environments, solubility of GST in slurries and also the zeta potentials
Liangyong Wang, Zhitang Song, Min Zhong, Weili Liu, Weixia Yan, Fei Qin, Aodong He, Bo Liu   +7 more
openaire   +1 more source