Results 211 to 220 of about 18,989 (261)

Progressive Mechanical and Chemical Polishing

Topical Meeting on the Science of Polishing, 1984
The reproducible preparation of mirror-like, damage-free and optically flat surfaces is crucial to the fabrication of high performance semiconductor or optical devices. Therefore, various polishing methods have been proposed and successed for finishing a brittle or a metallic material surface.
Toshio Kasai, Akira Kobayashi
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Analytical solution for polish-rate decay in chemical–mechanical polishing

Journal of Engineering Mathematics, 2010
zbMATH Open Web Interface contents unavailable due to conflicting licenses.
Shi, Hong, Ring, Terry A.
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A Model of Chemical Mechanical Polishing

Journal of The Electrochemical Society, 2000
ABSTRACTA generic model is presented which explains the dependence of chemical mechanical polishing rates on the concentration of reacting chemicals and abrasives in the slurry. The predictions of this model are compared to data from the literature for tungsten CMP.
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An Effect Contrast for Chemical Mechanical Polishing with Mechanical Polishing for Tungsten Steel

Advanced Materials Research, 2009
The interaction between the tungsten steel surface and the polishing fluid & abrasive were discussed by AFM, SEM and XRD test in order to compare the chemical performances and mechanical action of the tungsten steel polishing in the paper. The chemical mechanical polishing (CMP) and the mechanical polishing (MP) was employed, respectively.
Ke Hua Zhang, Dong Hui Wen
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An Effective Chemical Mechanical Polishing Filling Approach

2015 IEEE Computer Society Annual Symposium on VLSI, 2015
To reduce chip-scale topography variation, dummy fill is commonly used to improve the layout density uniformity. Previous work either sought the most uniform density distribution or sought to minimize the inserted dummy fills while satisfying certain density uniformity constraint.
Chuangwen Liu, Peishan Tu, Pangbo Wu, Haomo Tang, Yande Jiang, Jian Kuang 0001, Evangeline F. Y. Young   +6 more
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Chemical Mechanical Polish for Nanotechnology

2011
Chemical mechanical polish (CMP) is a process technology that was adapted from wafer polishing to IC fabrication and thereby enabled the semiconductor industry to extend optical lithography and invent novel approaches such as damascene interconnects.
L. Nolan, K. Cadien
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Simulation of Particle Adhesion: Implications in Chemical Mechanical Polishing and Post Chemical Mechanical Polishing Cleaning

Journal of The Electrochemical Society, 2001
We have previously described a model and a simulation approach to describe the adhesive interaction between a particle and a substrate. In this paper, we use the validated simulation to describe the adhesive interaction for alumina particles in contact with dielectric and metal films relevant to chemical mechanical polishing (CMP) and post-CMP cleaning
Kevin Cooper, Anand Gupta, Stephen Beaudoin   +2 more
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Electro-chemical mechanical polishing of silicon carbide

Journal of Electronic Materials, 2004
In an effort to improve the silicon carbide (SiC) substrate surface, a new electro-chemical mechanical polishing (ECMP) technique was developed. This work focused on the Si-terminated 4H-SiC (0001) substrates cut 8° off-axis toward 〈1120〉. Hydrogen peroxide (H2O2) and potassium nitrate (KNO3) were used as the electrolytes while using colloidal silica ...
Can Hua Li, Rong Jun Wang, Joseph Seiler, I. Bhat   +3 more
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A statistical polishing pad model for chemical-mechanical polishing

Proceedings of IEEE International Electron Devices Meeting, 2002
Chemical mechanical polishing (CMP) has emerged as a critical technology for advanced integrated circuit fabrication. This paper presents for the first time a physical CMP model that includes the effects of polishing pad roughness and dynamic interaction between pad and wafer.
null Tat-Kwan Yu, C.C. Yu, M. Orlowski
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Modeling of Polishing Pad Wear in Chemical Mechanical Polishing

Key Engineering Materials, 2010
The polishing pad’s wear influences the surface accuracy of the polished wafer. A new polishing pad wear model is established using the idea of Finite Element Analysis (FEA) and the effect of polishing parameters on the wear of polishing pad is discussed.
Mao Li, Yong Wei Zhu, Jun Li, Kui Lin
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