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Mechanical interactions and their effects on chemical mechanical polishing

IEEE Transactions on Semiconductor Manufacturing, 2001
Mechanical interactions, such as contact stress and fluid pressure are of extreme importance in silicon wafer polishing, especially for the wafer-scale planarity of the finished surfaces. In this paper, the measurements of interfacial fluid pressure and friction, as well as their dependence on some major process variables, are presented.
null Lei Shan   +2 more
openaire   +1 more source

Silicon Nitride Chemical Mechanical Polishing Mechanisms

Journal of The Electrochemical Society, 1998
To elucidate the fundamentals of chemical mechanical polishing (CMP) of silicon nitride, low pressure chemical vapor deposited silicon nitride is analyzed by X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy both before and after CMP, demonstrating the salient increase of oxygen content, amine species, and silanol groups ...
Y. Z. Hu, R. J. Gutmann, T. P. Chow
openaire   +1 more source

Chemical Mechanical Polishing of Ta

Electrochemical and Solid-State Letters, 1999
openaire   +1 more source

Chemical mechanical polishing of titanium

Abstracts of the General Sessions of the Japanese Society for Dental Materials and Devices, 2002
Okawa, S.   +6 more
openaire   +1 more source

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