Results 201 to 210 of about 18,989 (261)
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Mechanism of Ge2Sb2Te5 chemical mechanical polishing
Applied Surface Science, 2012Abstract We report the exploration of Ge2Sb2Te5 (GST) chemical mechanical polishing (CMP) mechanism. Static etching experiments of GST film were first conducted in two typical silica-based slurries (pH 2 and pH 11). To investigate the chemical nature of GST in different chemical environments, solubility of GST in slurries and also the zeta potentials
Liangyong Wang +7 more
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Chemical processes in the chemical mechanical polishing of copper
Materials Chemistry and Physics, 1995The mechanisms by which removal and planarization occur during the chemical mechanical polishing (CMP) of copper, used for pattern delineation in a multilevel metallization scheme, are investigated in this paper. We propose that removal occurs as mechanical abrasion of the surface followed by chemical dissolution of the abraded species.
S P Murarka, R J Gutmann
exaly +2 more sources
Modeling of Polishing Regimes in Chemical Mechanical Polishing
MRS Proceedings, 2005AbstractChemical mechanical polishing (CMP) is widely used for local and global planarization of microelectronic devices. It has been demonstrated experimentally in the literature that the polishing performance is a result of the synergistic effect of both the chemicals and the particles involved in CMP.
Suresh B. Yeruva +2 more
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Tungsten Chemical Mechanical Polishing
Journal of The Electrochemical Society, 1998After chemical mechanical polishing (CMP) of oxides became a standard method for global planarization, the polishing of metals is now being embraced by manufacturing. Although tungsten CMP has been used for subhalf-micron technologies for quite some time, there is still a lack of theoretical understanding and modeling of the metal CMP processes.
Norbert Elbel +3 more
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Chemical-mechanical polishing of ores
Economic Geology, 1965A combination of mechanical abrasion and chemical solution, obtained by mixing various acids with suspensions of abrasives, may produce better polished surfaces, more free of pits and scratches, than abrasives alone.
Eugene N. Cameron +1 more
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2012
Chemical mechanical planarization (CMP) has emerged as an indispensable processing technique for planarization in submicron multilevel VLSI. An analytic model of the material removal rate is proposed for CMP. The effects of applied pressure and polishing velocity are derived by considering the chemical reaction as well as the mechanical bear-and-shear ...
H. Y. Tsai, H. Hocheng, Y. L. Huang
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Chemical mechanical planarization (CMP) has emerged as an indispensable processing technique for planarization in submicron multilevel VLSI. An analytic model of the material removal rate is proposed for CMP. The effects of applied pressure and polishing velocity are derived by considering the chemical reaction as well as the mechanical bear-and-shear ...
H. Y. Tsai, H. Hocheng, Y. L. Huang
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Chemical Mechanical Polishing of InP
ECS Journal of Solid State Science and Technology, 2012Results of a detailed study of different parameters of the polishing process and their influence on the removal rates (RRs) of InP are presented. RRs with silica-based slurries as well as generation of PH3 were much higher in the acidic pH regions compared to those in basic pH regions.
Shivaji Peddeti +3 more
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Mechanism and Applications of Chemical and Mechanical Polishing
2009The mechanism of chemical mechanical polishing (CMP) is so complicated because there is synergy between chemical and mechanical action. We studied the effect of particels in CMP by MD simulation theoreticaly and liquid jet simulation experimentaly. The results show that MD simulation and slurry jet test have the similar result.
Xinchun Lu, Guoshun Pan, Jianbin Luo
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Mechanism of titanium–nitride chemical mechanical polishing*
Chinese Physics B, 2021During the preparation of the phase change memory, the deposition and chemical mechanical polishing (CMP) of titanium nitride (TiN) are indispensable. A new acidic slurry added with sodium hypochlorite (NaClO) as an oxidizer is developed for the CMP of TiN film.
Dao-Huan Feng +6 more
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Chemical Mechanical Polishing of GaN
Journal of The Electrochemical Society, 2008Chemical mechanical polishing of (0001) GaN has been demonstrated with sodium-hypochlorite-based solutions. Slurries including alumina abrasive provide an efficient means of planarization for both the Ga- and N-face that does not induce significant crystalline damage. Removal rates were found to be ∼ 50 nm/min and were equivalent for both polarities.
S. Hayashi, T. Koga, M. S. Goorsky
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