Results 201 to 210 of about 20,386 (260)

Modeling of Polishing Regimes in Chemical Mechanical Polishing

MRS Proceedings, 2005
AbstractChemical mechanical polishing (CMP) is widely used for local and global planarization of microelectronic devices. It has been demonstrated experimentally in the literature that the polishing performance is a result of the synergistic effect of both the chemicals and the particles involved in CMP.
Suresh B. Yeruva, Chang-Won Park, Brij M. Moudgil   +2 more
openaire   +1 more source

Chemical-mechanical polishing of ores

Economic Geology, 1965
A combination of mechanical abrasion and chemical solution, obtained by mixing various acids with suspensions of abrasives, may produce better polished surfaces, more free of pits and scratches, than abrasives alone.
Eugene N. Cameron, Willem C. J. VanRensburg   +1 more
openaire   +1 more source

Tungsten Chemical Mechanical Polishing

Journal of The Electrochemical Society, 1998
After chemical mechanical polishing (CMP) of oxides became a standard method for global planarization, the polishing of metals is now being embraced by manufacturing. Although tungsten CMP has been used for subhalf-micron technologies for quite some time, there is still a lack of theoretical understanding and modeling of the metal CMP processes.
Norbert Elbel, Bernhard Neureither, Bernd Ebersberger, Peter Lahnor   +3 more
openaire   +1 more source

Mechanism and Applications of Chemical and Mechanical Polishing

2009
The mechanism of chemical mechanical polishing (CMP) is so complicated because there is synergy between chemical and mechanical action. We studied the effect of particels in CMP by MD simulation theoreticaly and liquid jet simulation experimentaly. The results show that MD simulation and slurry jet test have the similar result.
Xinchun Lu, Guoshun Pan, Jianbin Luo
openaire   +1 more source

Chemical Mechanical Polishing of GaN

Journal of The Electrochemical Society, 2008
Chemical mechanical polishing of (0001) GaN has been demonstrated with sodium-hypochlorite-based solutions. Slurries including alumina abrasive provide an efficient means of planarization for both the Ga- and N-face that does not induce significant crystalline damage. Removal rates were found to be ∼ 50 nm/min and were equivalent for both polarities.
S. Hayashi, T. Koga, M. S. Goorsky
openaire   +1 more source

A Model of Chemical Mechanical Polishing

Journal of The Electrochemical Society, 2000
ABSTRACTA generic model is presented which explains the dependence of chemical mechanical polishing rates on the concentration of reacting chemicals and abrasives in the slurry. The predictions of this model are compared to data from the literature for tungsten CMP.
openaire   +1 more source

Progressive Mechanical and Chemical Polishing

Topical Meeting on the Science of Polishing, 1984
The reproducible preparation of mirror-like, damage-free and optically flat surfaces is crucial to the fabrication of high performance semiconductor or optical devices. Therefore, various polishing methods have been proposed and successed for finishing a brittle or a metallic material surface.
Toshio Kasai, Akira Kobayashi
openaire   +1 more source

Chemical Mechanical Polish for Nanotechnology

2011
Chemical mechanical polish (CMP) is a process technology that was adapted from wafer polishing to IC fabrication and thereby enabled the semiconductor industry to extend optical lithography and invent novel approaches such as damascene interconnects.
L. Nolan, K. Cadien
openaire   +1 more source

Polishing of polycrystalline diamond using synergies between chemical and mechanical inputs: A review of mechanisms and processes

Carbon, 2022
Chen Xiao, Steve Franklin, Feng-Chun Hsia   +2 more
exaly  

Composition for chemical-mechanical polishing and chemical-mechanical polishing method

2022
YAMADA YUUYA, WANG PENGYU, SUGIE NORIHIKO, KAMEI YASUTAKA   +3 more
openaire   +2 more sources