Study on the Electro-Fenton Chemomechanical Removal Behavior in Single-Crystal GaN Pin-Disk Friction Wear Experiments. [PDF]
Ou Y, Shen Z, Xie J, Pan J.
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Tribo-Electrochemical Mechanism of Material Removal Examined for Chemical Mechanical Planarization of Stainless-Steel Using Citrate Buffer as a Complexing Agent. [PDF]
Santefort DR, Gamagedara KU, Roy D.
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Demonstration of multiple-wavelength-band photonic integrated circuits using a silicon and silicon nitride 2.5D integration method. [PDF]
Fu M +12 more
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Research on Deflection and Stress Analyses and the Improvement of the Removal Uniformity of Silicon in a Single-Sided Polishing Machine Under Pressure. [PDF]
Ye G, Yao Z.
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Wafer-scale integration of photonic integrated circuits and atomic vapor cells. [PDF]
Grosman A +4 more
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Back Propagation Neural Network-Based Predictive Model for Magnetorheological-Chemical Polishing of Silicon Carbide. [PDF]
Liang H +8 more
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Double-Sided Fabrication of Low-Leakage-Current Through-Silicon Vias (TSVs) with High-Step-Coverage Liner/Barrier Layers. [PDF]
Yang B, Sun H, Zhu K, Wang X.
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The Stability Evaluation of Ceria Slurry Using Polymer Dispersants with Varying Contents for Chemical Mechanical Polishing Process. [PDF]
Hwang S, Park J, Kim W.
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Research on the Trajectory and Relative Speed of a Single-Sided Chemical Mechanical Polishing Machine. [PDF]
Ye G, Yao Z.
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