Results 81 to 90 of about 14,575 (156)

Basic study on pad conditioning in CMP(Chemical-Mechanical Polishing)

Proceedings of JSPE Semestrial Meeting, 2005
Kamikawa, Daiti, Doi, Shiro, Fujita, Takashi, Ogawa, Makoto, Watanabe, Shigeru, Seiki, Akihiko, Ogata, Kenjiro   +6 more
openaire   +1 more source

Effect of Molecular Weight of Surfactant in Nano Ceria Slurry on Shallow Trench Isolation Chemical Mechanical Polishing (CMP)

, 2004
H. Kang, Takeo Katoh, M. Lee, Hyung-Soon Park, U. Paik, Jea‐Gun Park   +5 more
semanticscholar   +1 more source

Consideration of Pad Conditioning in CMP(Chemical–Mechanical Polishing)

Proceedings of JSPE Semestrial Meeting, 2006
Kamikawa, Daichi, Fujita, Takasi, Doi, Tosiro   +2 more
openaire   +1 more source

Oxide Planarization of Trench Structure using Chemical Mechanical Polishing(CMP) [PDF]

Journal of the Korean Institute of Electrical and Electronic Material Engineers, 2002
openaire   +1 more source

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Chemical and physical mechanisms of dielectric chemical mechanical polishing (CMP)

Advances in Chemical Mechanical Planarization (CMP), 2022
Dielectric chemical mechanical polishing (CMP) was implemented in semiconductor fabrication as a simple alternative planarization process for the interlevel dielectrics surface instead of the reactive ion etching process of the 1980s.
Y. Moon
semanticscholar   +2 more sources

Chemical mechanical polishing (CMP) anisotropy in sapphire

Applied Surface Science, 2004
Abstract The polishing removal rate and surface quality of sapphire (Al2O3) varies greatly with crystal orientation when chemical effects couple with abrasive removal in chemical mechanical polishing (CMP). The relationship of orientation, solution chemistry and abrasive were studied for sapphire with c (0 0 0 1), a ( 1 1 2 0 ), and m (
Honglin Zhu, Luiz A. Tessaroto, R. Sabia, V. Greenhut, Maynard B. Smith, D. Niesz   +5 more
semanticscholar   +2 more sources

Chemical-mechanical polishing (CMP): a controlled tribocorrosion process

2011
M. Kulkarni, F. Gao, Hong Liang
exaly   +3 more sources

Adsorption behavior of anionic polyelectrolyte for chemical mechanical polishing (CMP).

Journal of Colloid and Interface Science, 2008
In this work, we investigated the adsorption characteristics of anionic polyelectrolytes, which are used in shallow trench isolation chemical mechanical polishing with ceria abrasives. Specifically, the adsorption isotherms and chain conformation of anionic polyelectrolytes were studied in order to elucidate the difference in removal rates of silicon ...
S. Kim, J. So, Dong-Jun Lee, Seung‐Man Yang   +3 more
semanticscholar   +4 more sources

Effect of Polishing Pad Material Properties on Chemical Mechanical Polishing (Cmp) Processes

MRS Proceedings, 1994
ABSTRACTChemical mechanical polishing (CMP) technology has successfully met the stringent requirements of ultraplanarized surfaces in semiconductor manufacture. Commonly, polyurethane based pads have been used to achieve this level of planarization.
R. Bajaj, M. Desai, Rahul Jairath, M. Stell, Robert D. Tolles   +4 more
semanticscholar   +2 more sources

Consumables for the Chemical Mechanical Polishing (Cmp) of Dielectrics and Conductors

MRS Proceedings, 1994
ABSTRACTChemical mechanical polishing (CMP) is rapidly becoming the process of choice for planarizing dielectrics in very large scale integrated circuits. In addition, it is being used at an increasing rate in the removal of metals in order to define conducting levels.
Rahul Jairath, M. Desai, M. Stell, Robert D. Tolles, Debra Scherber-Brewer   +4 more
semanticscholar   +2 more sources