Results 71 to 80 of about 14,575 (156)
Advance on molecular dynamics simulations of precision polishing of SiC
SignificanceSilicon carbide (SiC), as a representative material of third-generation semiconductors, holds vast potential for applications in microelectronics, optoelectronics, aerospace, and energy.
Jiayu ZHANG +3 more
doaj +3 more sources
Atomic-scale chemical mechanical polishing: advances and challenges for the post-Moore’s law era
Chemical mechanical polishing (CMP) has emerged as a critical technology for local and global surface planarization in integrated circuit manufacturing for decades.
Lifei Zhang, Xinchun Lu
doaj +1 more source
Objectives: Single crystal silicon carbide (SiC) is known for its high hardness and high chemical inertness, making it chanllenging to process effectively using traditional chemical mechanical polishing (CMP) methods.
Zhibin GU +4 more
doaj +1 more source
To satisfy the superior surface quality requirements in the fabrication of HBM (High-Bandwidth Memory) and 3D NAND Flash Memory, high-efficiency Si chemical mechanical planarization (CMP) is essential.
Min-Uk Jeon +9 more
doaj +1 more source
A Basic Study on Chemical Mechanical Polishing (CMP)
Akiyoshi ODA +3 more
openaire +2 more sources
A Study of Pad Conditioning in CMP(Chemical-Mechanical Polishing)
Kamikawa, Daichi +3 more
openaire +1 more source

