Results 71 to 80 of about 6,173 (209)

Experimental Strategies for Studying Tribo-Electrochemical Aspects of Chemical–Mechanical Planarization

open access: yesLubricants
Chemical–mechanical planarization (CMP) is used to smoothen the topographies of a rough surface by combining several functions of tribology (friction, lubrication), chemistry, and electrochemistry (corrosion, wear, tribo-corrosion).
Kassapa Gamagedara, Dipankar Roy
doaj   +1 more source

Research on influences of contact force in chemical mechanical polishing (CMP) process

open access: yesAIP Advances, 2015
A series of simulations of chemical mechanical polishing (CMP) were conducted to investigate the contact force between abrasive particles and specimens by using the finite element method (FEM).
Lei Han   +5 more
doaj   +1 more source

Toughening β‐Ga2O3 via Mechanically Seeded Dislocations

open access: yesAdvanced Functional Materials, Volume 36, Issue 30, 13 April 2026.
β‐Ga2O3 is promising for next‐generation semiconductors but its brittleness limits flexible and high‐precision applications. Here, mechanically seeded dislocations introduced by surface deformation improved damage tolerance in (001) β‐Ga2O3. Nanoindentation and characterization show dislocations suppress cleavage cracks by enabling stable plastic ...
Zanlin Cheng   +5 more
wiley   +1 more source

A Multi-scale Model for Copper Dishing in Chemical-Mechanical Polishing [PDF]

open access: yes, 2005
The present success in the manufacture of multi-layer interconnects in ultra-large-scale integration is largely due to the acceptable planarization capabilities of the chemical-mechanical polishing (CMP) process. In the past decade, copper has emerged as
Chun, Jung-Hoon   +2 more
core   +1 more source

Reverse graded relaxed buffers for high Ge content SiGe virtual substrates [PDF]

open access: yes, 2008
An innovative approach is proposed for epitaxial growth of high Ge content, relaxed Si1−xGex buffer layers on a Si(001) substrate. The advantages of the technique are demonstrated by growing such structures via chemical vapor deposition and their ...
Dobbie, A.   +5 more
core   +1 more source

Patterning of Lead Halide Perovskite Device Stacks on CMOS Readout Using Selective Microfabrication Protocols

open access: yesAdvanced Materials, Volume 38, Issue 21, 13 April 2026.
We present a microfabrication and integration strategy for lead halide perovskite photodetectors on electronic readouts. Standard photolithography, aqueous processing, selective transparent electrode etching, and plasma‐assisted pixel isolation enable precise monolithic integration of patterned 400 × 400 perovskite microphotodetector arrays on a CMOS ...
Sergey Tsarev   +14 more
wiley   +1 more source

Template assisted surface micro microstructuring of flowable dental composites and its effect on the microbial adhesion properties [PDF]

open access: yes, 2016
Despite their various advantages, such as good esthetic properties, absence of mercury and adhesive bonding to teeth, modern dental composites still have some drawbacks, e.g., a relatively high rate of secondary caries on teeth filled with composite ...
Frenzel, Nadja   +6 more
core   +1 more source

Technology platform for the fabrication of titanium nanostructures [PDF]

open access: yes, 2011
: This paper presents two approaches for the fabrication of top-down titanium nanostructures. The first approach involves electron beam lithography followed by a tailored titanium plasma etching.
Bourque, Frédéric   +6 more
core   +2 more sources

Nonuniform Silicon Backside Edge‐to‐Center Plasma Thinning Process Using Low Global Warming Potential Gas for High Bandwidth Memory (HBM)

open access: yesPlasma Processes and Polymers, Volume 23, Issue 4, April 2026.
This graphical abstract illustrates a novel eco‐friendly silicon thinning process designed to achieve precise thickness control and sustainability for high bandwidth memory (HBM) packaging. By placing low‐k magnets at the edge of the wafer carrier, a local magnetic field is generated to suppress electron transport via Lorentz force, selectively ...
Jong Woo Hong   +15 more
wiley   +1 more source

Modeling Dielectric Erosion in Multi-Step Copper Chemical-Mechanical Polishing [PDF]

open access: yes, 2004
A formidable challenge in the present multi-step Cu CMP process, employed in the ultra-large-scale integration (ULSI) technology, is the control of wafer surface non-uniformity, which primarily is due to dielectric erosion and Cu dishing.
Chun, Jung-Hoon   +2 more
core  

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