Results 91 to 100 of about 6,173 (209)
Analysis of sapphire- chemical mechanical polishing using digital image processing
Mechanical Engineering Journal, 2016 This study investigated the contact interface behavior between a wafer and a polishing pad in sapphire- chemical mechanical polishing (CMP) for considering the improvement of the removal rate.
Michio UNEDA +4 more
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Advances in Materials Science and Engineering, 2014 Chemical mechanical polishing (CMP) technology is extensively used in the global planarization of highly value-added and large components in the aerospace industry. A nanopowder of SiO2 was prepared by the sol-gel method and was compounded into polishing
M. J. Kao, F. C. Hsu, D. X. Peng
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Method for one-to-one polishing of silicon nitride and silicon oxide [PDF]
, 2009 The present invention provides a method of removing silicon nitride at about the same removal rate as silicon dioxide by CMP. The method utilizes a polishing slurry that includes colloidal silica abrasive particles dispersed in water and additives that ...
Babu, Suryadevara V., Natarajan, Anita
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A Mechanical Model for Erosion in Copper Chemical-Mechanical Polishing [PDF]
, 2003 The Chemical-mechanical polishing (CMP) process is now widely employed in the ultralarge scale integration chip fabrication. Due to the continuous advances in semiconductor fabrication technology and decreasing sub-micron feature size, the ...
Chun, Jung-Hoon +2 more
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Data in Brief, 2017 Bioactivity of titanium depends on the quality and characteristics of its surface oxide film. Through implementation of chemical mechanical polishing (CMP) process on titanium plates, a protective oxide (titania) film grows on the titanium based implant ...
Zeynep Ozdemir, Gul Bahar Basim
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Effect of abrasive vibration on microstructure evolution and material removal of SiC CMP
Jin'gangshi yu moliao moju gongchengTo address issues related to abrasion, agglomeration, and the challenges of mechanical and chemical release during chemical mechanical polishing (CMP), a vibration-assisted CMP method is employed.
Ailing TANG +3 more
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Interaction Effects of Slurry Chemistry on Chemical Mechanical Planarization of Electroplated Copper [PDF]
, 2004 Recent studies have been conducted investigating the effects of slurry chemistry on the copper CMP process. Slurry pH and hydrogen peroxide concentration are two important variables that must be carefully formulated in order to achieve desired removal ...
Imonigie, Jerome A. +2 more
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Advance on molecular dynamics simulations of precision polishing of SiC
Jin'gangshi yu moliao moju gongchengSignificanceSilicon carbide (SiC), as a representative material of third-generation semiconductors, holds vast potential for applications in microelectronics, optoelectronics, aerospace, and energy.
Jiayu ZHANG +3 more
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Atomic-scale chemical mechanical polishing: advances and challenges for the post-Moore’s law era
Materials FuturesChemical mechanical polishing (CMP) has emerged as a critical technology for local and global surface planarization in integrated circuit manufacturing for decades.
Lifei Zhang, Xinchun Lu
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Electrochemical Nanomachining based on Redox Hydrogel Nanofilm: Copper Planarization with nano-precision [PDF]
, 2013 纳米加工要求能够在纳米或分子、原子水平上可控地实现材料的去除、形变或增添。材料去除是目前最常用的加工手段，其特征是将材料表面的一部分与本体之间的化学或金属键打开，并将之移离。按开键原理，相关的加工可大致分为机械、能量束（离子、激光、电子等）、电化学和化学等方法，并有着各自的优缺点，如：机械和能量束法加工精度高，但会造成加工面的损伤，电化学和化学方法则相反。 近年来，飞速发展的各应用领域对加工后的表面质量要求急剧提高，特别是超大规模集成电路制造中的铜互连导线以及高能激光应用中的发/反射镜面 ...
张红万
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