Results 101 to 110 of about 14,575 (156)
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, 2020
In this study, a method to improve the chemical mechanical polishing (CMP) performance of ceria as abrasive particles was proposed.
Jie Cheng, Shuo Huang, Xinchun Lu
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In this study, a method to improve the chemical mechanical polishing (CMP) performance of ceria as abrasive particles was proposed.
Jie Cheng, Shuo Huang, Xinchun Lu
semanticscholar +1 more source
Dynamic Contact Characteristics During Chemical Mechanical Polishing (CMP)
MRS Proceedings, 2003AbstractIn chemical mechanical polishing (CMP), it is critical to understand dynamic contact at the pad-particles-wafer interface for desired CMP performance. The dynamic contact is dependent on process variables (platen velocity and down pressure) and particle characteristics (size and concentration), which in turn affect friction force. In this study,
Wonseop Choi +2 more
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Electrochemical View of Copper Chemical-Mechanical Polishing (CMP)
2009Copper is the metal of choice, replacing aluminum in integrated circuit interconnections [1]. This switch was emerged and stimulated due to copper advantage characteristics, such as low resistivity and high immunity to electro-migration, which in turn result in greater circuit reliability and markedly higher clock frequency.
D. Starosvetsky, Y. Ein-Eli
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Novel Use of Surfactants in Copper Chemical Mechanical Polishing (CMP)
MRS Proceedings, 2005AbstractIn this study, the interaction between several kinds of surfactants and copper surface was examined to control the dissolution of copper during CMP. Among those surfactants, sodium dodecylsulfate (SDS), one of the conventional anionic surfactants, showed effective interaction with copper and significantly suppressed the dissolution of the ...
Youngki Hong +3 more
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Use of Malonic Acid in Chemical-Mechanical Polishing ( CMP ) of Tungsten
MRS Proceedings, 1997ABSTRACTThe use of malonic acid as an additive in alumina slurries used for the chemical mechanical polishing ( CMP ) of tungsten has been explored for the reduction of particulate contamination. The principal objective of this work was to delineate conditions under which alumina ...
L. Zhang, S. Raghavan
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Fabrication of volcano emitters using chemical mechanical polishing (CMP)
9th International Vacuum Microelectronics Conference, 2002Volcano emitters with gate dimensions of 6, 9, 15, 25, and 50 /spl mu/m have been processed using chemical mechanical polishing (CMP) for the removal of the emitter material and the gate-to-emitter dielectric on top of the gate plateau. Devices were fabricated with Cr, Cr-cermet, TiW/Au, SiC, and SiC/TiW/Au as the emitter materials and with 1 /spl mu/m
H. Busta +5 more
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Managing Corrosion during the Chemical Mechanical Polishing (CMP) of Metal Films
ECS Meeting Abstracts, 2012Abstract not Available.
James Schlueter, James Henry, Tom X. Shi
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Experimental Investigation on the Roles of Chemical Corrosion and Mechanical Polishing on Copper CMP
Manufacturing Engineering and Materials Handling Engineering, 2004This paper is an experimental investigation on the roles of chemical corrosion and mechanical polishing of the chemical mechanical polishing (CMP) of wafers with copper film of 1,000 nm thickness. Three types of experiments are designed and conducted: chemical corrosion, mechanical polishing, and CMP with φ0.3μm Al2O3 as abrasives.
Jhy-Cherng Tsai +3 more
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