Results 121 to 130 of about 1,061 (174)

Chemical-mechanical polishing (CMP): a controlled tribocorrosion process

2011
M. Kulkarni, F. Gao, H. Liang
exaly   +2 more sources

Chemical mechanical polishing (CMP) anisotropy in sapphire

Applied Surface Science, 2004
Abstract The polishing removal rate and surface quality of sapphire (Al2O3) varies greatly with crystal orientation when chemical effects couple with abrasive removal in chemical mechanical polishing (CMP). The relationship of orientation, solution chemistry and abrasive were studied for sapphire with c (0 0 0 1), a ( 1 1 2 0 ), and m (
Honglin Zhu, Luiz A. Tessaroto, Robert Sabia, Victor A. Greenhut, Maynard Smith, Dale E. Niesz   +5 more
openaire   +1 more source

Adsorption behavior of anionic polyelectrolyte for chemical mechanical polishing (CMP)

Journal of Colloid and Interface Science, 2008
In this work, we investigated the adsorption characteristics of anionic polyelectrolytes, which are used in shallow trench isolation chemical mechanical polishing with ceria abrasives. Specifically, the adsorption isotherms and chain conformation of anionic polyelectrolytes were studied in order to elucidate the difference in removal rates of silicon ...
Kim, S Kim, Sarah, So, JH So, Jae-Hyun, Lee, DJ Lee, Dong-Jun, Yang, SM Yang, Seung-Man   +3 more
openaire   +3 more sources

Consumables for the Chemical Mechanical Polishing (Cmp) of Dielectrics and Conductors

MRS Proceedings, 1994
ABSTRACTChemical mechanical polishing (CMP) is rapidly becoming the process of choice for planarizing dielectrics in very large scale integrated circuits. In addition, it is being used at an increasing rate in the removal of metals in order to define conducting levels.
Rahul Jairath, Mukesh Desai, Matt Stell, Robert Tolles, Debra Scherber-Brewer   +4 more
openaire   +1 more source

Mechanisms of the Chemical Mechanical Polishing (CMP) Process in Integrated Circuit Fabrication

CIRP Annals, 2001
Abstract A contact mechanics model that describes the polishing mechanisms of copper-patterned silicon wafers in the fabrication of ultra-large-scale integrated (ULSI) circuits is presented. The model explains the die-scale variation of material removal rates due to pattern geometry, and predicts results that are in agreement with experimental ...
Nannaji Saka, Jiun-Yu Lai, Jung-Hoon Chun, Nam P. Sun   +3 more
openaire   +1 more source

Effect of Polishing Pad Material Properties on Chemical Mechanical Polishing (Cmp) Processes

MRS Proceedings, 1994
ABSTRACTChemical mechanical polishing (CMP) technology has successfully met the stringent requirements of ultraplanarized surfaces in semiconductor manufacture. Commonly, polyurethane based pads have been used to achieve this level of planarization.
Rajeev Bajaj, Mukesh Desai, Rahul Jairath, Matthew Stell, Robert Tolles   +4 more
openaire   +1 more source

Dynamic Contact Characteristics During Chemical Mechanical Polishing (CMP)

MRS Proceedings, 2003
AbstractIn chemical mechanical polishing (CMP), it is critical to understand dynamic contact at the pad-particles-wafer interface for desired CMP performance. The dynamic contact is dependent on process variables (platen velocity and down pressure) and particle characteristics (size and concentration), which in turn affect friction force. In this study,
Wonseop Choi, Seung-Mahn Lee, Rajiv K. Singh   +2 more
openaire   +1 more source

Strategies for Optimal Chemical Mechanical Polishing (CMP) Slurry Design

Journal of Dispersion Science and Technology, 2003
Abstract Chemical mechanical polishing (CMP) has become the preferred route for achieving wafer‐level global planarization in microelectronics device manufacturing. However, the micro‐ to molecular‐level mechanisms that control its performance and optimization are not well understood.
G. Bahar Basim, Scott C. Brown, Ivan U. Vakarelski, Brij M. Moudgil   +3 more
openaire   +1 more source

Novel Use of Surfactants in Copper Chemical Mechanical Polishing (CMP)

MRS Proceedings, 2005
AbstractIn this study, the interaction between several kinds of surfactants and copper surface was examined to control the dissolution of copper during CMP. Among those surfactants, sodium dodecylsulfate (SDS), one of the conventional anionic surfactants, showed effective interaction with copper and significantly suppressed the dissolution of the ...
Youngki Hong, Udaya B. Patri, Suresh Ramakrishnan, S.V. Babu   +3 more
openaire   +1 more source

Electrochemical View of Copper Chemical-Mechanical Polishing (CMP)

2009
Copper is the metal of choice, replacing aluminum in integrated circuit interconnections [1]. This switch was emerged and stimulated due to copper advantage characteristics, such as low resistivity and high immunity to electro-migration, which in turn result in greater circuit reliability and markedly higher clock frequency.
D. Starosvetsky, Y. Ein-Eli
openaire   +1 more source