Results 141 to 150 of about 7,532,110 (199)

Synergistic Multi-Mechanism Enhancement in Chemomechanical Abrasive Polishing of Polycrystalline Diamond via a New SiO₂-Diamond Slurry in High-Concentration H₂O₂ Solution. [PDF]

Materials (Basel)
Zheng X, Zheng K, Gao J, Wang Y, An P, Ma Y, Hei H, Qu S, Yu S.   +8 more
europepmc   +1 more source

Multi-Field Characterisation of Material Removal Processes in Ultrasonic Magnetorheological Chemical Compound Polishing of GaN Wafers. [PDF]

Micromachines (Basel)
Liang H, Chen W, Fu Y, Zhou W, Mo L, Wen Q, Liu D, He J.   +7 more
europepmc   +1 more source

Ultra-Precise Dispensing for Rapid and Flexible Through-Silicon Via Filling. [PDF]

Materials (Basel)
Szczotka N, Nashashibi S, Motyka A, Drozdek S, Leuthold J, Malecha K.   +5 more
europepmc   +1 more source

Design and Fabrication of a Dual-Axis MEMS Electrostatic Micromirror Based on a Planar Comb Drive. [PDF]

Micromachines (Basel)
Li M, Jiao W, Huang K, Wang B, Dai Z, Gao Y, Cao H, Xie H.   +7 more
europepmc   +1 more source

Consumables for the Chemical Mechanical Polishing (Cmp) of Dielectrics and Conductors

MRS Proceedings, 1994
ABSTRACTChemical mechanical polishing (CMP) is rapidly becoming the process of choice for planarizing dielectrics in very large scale integrated circuits. In addition, it is being used at an increasing rate in the removal of metals in order to define conducting levels.
Rahul Jairath, Mukesh Desai, Matt Stell, Robert Tolles, Debra Scherber-Brewer   +4 more
openaire   +2 more sources

XPS, UV–vis spectroscopy and AFM studies on removal mechanisms of Si-face SiC wafer chemical mechanical polishing (CMP)

Applied Surface Science, 2014
Chemical mechanical polishing (CMP) removal mechanisms of on-axis Si-face SiC wafer have been investigated through X-ray photoelectron spectroscopy (XPS), UV-visible (UV-vis) spectroscopy and atomic force microscopy (AFM).
Xiaolei Shi, Guoshun Pan, Guihai Luo
exaly   +2 more sources

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Chemical-mechanical polishing (CMP): a controlled tribocorrosion process

2011
M. Kulkarni, F. Gao, H. Liang
exaly   +2 more sources

Chemical mechanical polishing (CMP) anisotropy in sapphire

Applied Surface Science, 2004
Abstract The polishing removal rate and surface quality of sapphire (Al2O3) varies greatly with crystal orientation when chemical effects couple with abrasive removal in chemical mechanical polishing (CMP). The relationship of orientation, solution chemistry and abrasive were studied for sapphire with c (0 0 0 1), a ( 1 1 2 0 ), and m (
Honglin Zhu, Luiz A. Tessaroto, Robert Sabia, Victor A. Greenhut, Maynard Smith, Dale E. Niesz   +5 more
openaire   +1 more source

Adsorption behavior of anionic polyelectrolyte for chemical mechanical polishing (CMP)

Journal of Colloid and Interface Science, 2008
In this work, we investigated the adsorption characteristics of anionic polyelectrolytes, which are used in shallow trench isolation chemical mechanical polishing with ceria abrasives. Specifically, the adsorption isotherms and chain conformation of anionic polyelectrolytes were studied in order to elucidate the difference in removal rates of silicon ...
Kim, S Kim, Sarah, So, JH So, Jae-Hyun, Lee, DJ Lee, Dong-Jun, Yang, SM Yang, Seung-Man   +3 more
openaire   +3 more sources

Characterization of Ceria Nanoparticles as Abrasives Applied with Defoaming Polymers for CMP (Chemical Mechanical Polishing) Applications

Polymers
Chemical mechanical polishing/planarization (CMP) is an essential manufacturing process in semiconductor technologies. This method combines chemical and mechanical forces to smooth the surfaces of wafers.
Woonjung Kim
exaly   +2 more sources