Results 141 to 150 of about 1,061 (174)

Characterization of Slurries Used for Chemical‐Mechanical Polishing (CMP) in the Semiconductor Industry

Chemical Engineering & Technology, 2003
In the chemical‐mechanical polishing applied during the manufacture of semiconductor devices the polishing slurry is of major importance for the processing result and hence, a permanent, strict monitoring of the slurry properties is necessary. For this purpose qualified particle size analysis methods for the characterization of the solid particles used
T. Kuntzsch, U. Witnik, M. Hollatz, M. Stintz, S. Ripperger   +4 more
openaire   +1 more source

Development of the inspection system of defects on a CMP (Chemical Mechanical Polishing) pad

2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203), 2002
In CMP(Chemical Mechanical Polishing) process, if there are defects on the polishing pad, scratches are generated on the surface of the semiconductor wafer. We developed the inspection system of defects on the chemical mechanical polishing pad. The system uses a white light source and a CCD camera in order to inspect defects.
null Kye Weon Kim, null Yu Sin Yang, null Chung Sam Chun, null Sang Mun Chun, null Dong Chun Lee, null Sun Yong Choi, null Sang Bong Choi, null Sung Jin Park   +7 more
openaire   +1 more source

Particle Adhesion and Removal in Chemical Mechanical Polishing and Post‐CMP Cleaning

Journal of The Electrochemical Society, 1999
A new model including the effects of polishing pressure and platen speed on particle penetration depth in chemical mechanical polishing (CMP) processes is derived based on the particle adhesion theory, the surface plastic deformation, and the pad‐wafer partial contact.
Fan Zhang, Ahmed A. Busnaina, Goodarz Ahmadi   +2 more
openaire   +1 more source

Rice Husk Fiber-Based Polishing Pad for Chemical Mechanical Polishing (CMP) of Sapphire

Defect and Diffusion Forum
This research aims to study the properties of polishing pads made from polyurethane mixed with rice husk fiber for use in chemical mechanical polishing (CMP) of sapphire. After cleaning and sizing, the rice husk fiber was modified using hydrochloric acid (HCl).
Sethavut Duangchan, Natthaphon Bun-Athuek, Mighttho Ketsuwan, Muhammad Mudden, Panart Khajornrungruang, Keisuke Suzuki   +5 more
openaire   +1 more source

Relating Friction and Processes Development during Chemical — Mechanical Polishing (CMP)

2009
Die-scale models of CMP have been previously reported for a number of different CMP processes used in integrated circuit (IC) manufacturing, including oxide, dual material shall row trench isolation, and dual material copper damascene processes. Next generation integrated circuits (IC’s) will require the use of porous dielectric materials with shear ...
Filip Ilie, Tiberiu Laurian, Constantin Tita   +2 more
openaire   +1 more source

A plasticity-based model of material removal in chemical-mechanical polishing (CMP)

IEEE Transactions on Semiconductor Manufacturing, 2001
It is well known that the chemical reaction between an oxide layer and a water-based slurry produces a softer hydroxylated interface layer. During chemical-mechanical polishing (CMP), it is assumed that material removal occurs by the plastic deformation of this interface layer.
null Guanghui Fu, A. Chandra, S. Guha, G. Subhash   +3 more
openaire   +1 more source

Models of nanoparticles movement, collision, and friction in chemical mechanical polishing (CMP)

Journal of Nanoparticle Research, 2012
Nanoparticles have been widely used in polishing slurry such as chemical mechanical polishing (CMP) process. The movement of nanoparticles in polishing slurry and the interaction between nanoparticles and solid surface are very important to obtain an atomic smooth surface in CMP process.
openaire   +1 more source

Development of an optimal inspection strategy for chemical mechanical polished (CMP) wafers

Proceedings of SEMI Advanced Semiconductor Manufacturing Conference and Workshop, 2002
Summary form only given. This paper details the path taken to develop an optimal inspection strategy for monitoring defect levels from a CMP process. The relative unpredictability of this process can cause thickness variations across a wafer. These variations make many conventional inspection techniques unreliable.
R. Sacco, R. Cappel
openaire   +1 more source

Development of Ceria Slurry for Enhanced Chemical Mechanical Polishing (CMP) Performance

ECS Meeting Abstracts
As the semiconductor device is shrinking and gets complicated, the chemical mechanical polishing (CMP) process has become important. Various types of abrasive particles are used as CMP slurry, and among them, ceria slurry is in the spotlight due to its high material removal rate (MRR) and selectivity on oxide CMP process.
Taesung Kim, Jaewon Lee
openaire   +1 more source

Chemical Mechanical Polishing (CMP)

2013
Steven Danyluk, Sum Huan Ng
openaire   +1 more source