Results 151 to 160 of about 6,173 (209)

Mechanisms of Chemically Promoted Material Removal Examined for Molybdenum and Copper CMP in Weakly Alkaline Citrate-Based Slurries. [PDF]

Materials (Basel)
Gamagedara KU, Roy D.
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Electrocoagulation of chemical mechanical polishing (CMP) wastewater from semiconductor fabrication

Chemical Engineering Journal, 2003
Treatment of chemical mechanical polishing (CMP) wastewater is investigated. The CMP wastewater, as obtained from a large semiconductor manufacturer, was characterized by high suspended solids (SS) content, high Nephelometric turbidity unit (NTU), chemical oxygen demand (COD) concentration up to 500 mg/l, copper concentration over 100 mg/l and a milky ...
Chen L Lai, Sheng H Lin
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Study on Nanoparticle Agglomeration During Chemical Mechanical Polishing (CMP) Performance

Journal of Nanofluids, 2021
The materials used in base fluids and nanoparticles are varied. One- and two-step manufacturing processes are used to create stable and highly conductive nanofluids. Both methods for making nanoparticle suspensions suffer from nanoparticle agglomeration, which is a major problem in any technique that uses nanopowders.
Mohammed A. Y. A. Bakier, Keisuke Suzuki, Panart Khajornrungruang   +2 more
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Chemical mechanical polishing (CMP) anisotropy in sapphire

Applied Surface Science, 2004
Abstract The polishing removal rate and surface quality of sapphire (Al2O3) varies greatly with crystal orientation when chemical effects couple with abrasive removal in chemical mechanical polishing (CMP). The relationship of orientation, solution chemistry and abrasive were studied for sapphire with c (0 0 0 1), a ( 1 1 2 0 ), and m (
Honglin Zhu, Luiz A. Tessaroto, Robert Sabia, Victor A. Greenhut, Maynard Smith, Dale E. Niesz   +5 more
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Dynamic Contact Characteristics During Chemical Mechanical Polishing (CMP)

MRS Proceedings, 2003
AbstractIn chemical mechanical polishing (CMP), it is critical to understand dynamic contact at the pad-particles-wafer interface for desired CMP performance. The dynamic contact is dependent on process variables (platen velocity and down pressure) and particle characteristics (size and concentration), which in turn affect friction force. In this study,
Wonseop Choi, Seung-Mahn Lee, Rajiv K. Singh   +2 more
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Adsorption behavior of anionic polyelectrolyte for chemical mechanical polishing (CMP)

Journal of Colloid and Interface Science, 2008
In this work, we investigated the adsorption characteristics of anionic polyelectrolytes, which are used in shallow trench isolation chemical mechanical polishing with ceria abrasives. Specifically, the adsorption isotherms and chain conformation of anionic polyelectrolytes were studied in order to elucidate the difference in removal rates of silicon ...
Kim, S Kim, Sarah, So, JH So, Jae-Hyun, Lee, DJ Lee, Dong-Jun, Yang, SM Yang, Seung-Man   +3 more
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Strategies for Optimal Chemical Mechanical Polishing (CMP) Slurry Design

Journal of Dispersion Science and Technology, 2003
Abstract Chemical mechanical polishing (CMP) has become the preferred route for achieving wafer‐level global planarization in microelectronics device manufacturing. However, the micro‐ to molecular‐level mechanisms that control its performance and optimization are not well understood.
G. Bahar Basim, Scott C. Brown, Ivan U. Vakarelski, Brij M. Moudgil   +3 more
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Chemical mechanical polishing: future processes require CMP tool flexibility

SPIE Proceedings, 1998
Development of Chemical Mechanical Polishing (CMP) tools and CMP processes are proceeding in parallel, but are not independent. Advanced processes require more flexibility and high throughput than available on present production CMP tools. This paper illustrates the development of a new CMP tool where both maximum flexibility and highest throughput are
F. A. Tony Schraub, John Boyd, Jim Valentine, John Curry   +3 more
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Fabrication of volcano emitters using chemical mechanical polishing (CMP)

9th International Vacuum Microelectronics Conference, 2002
Volcano emitters with gate dimensions of 6, 9, 15, 25, and 50 /spl mu/m have been processed using chemical mechanical polishing (CMP) for the removal of the emitter material and the gate-to-emitter dielectric on top of the gate plateau. Devices were fabricated with Cr, Cr-cermet, TiW/Au, SiC, and SiC/TiW/Au as the emitter materials and with 1 /spl mu/m
H. Busta, G. Gammie, S. Skala, M. Fury, M. Stell, T. Myers   +5 more
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