Results 151 to 160 of about 7,532,110 (199)
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Mechanisms of the Chemical Mechanical Polishing (CMP) Process in Integrated Circuit Fabrication
CIRP Annals, 2001Abstract A contact mechanics model that describes the polishing mechanisms of copper-patterned silicon wafers in the fabrication of ultra-large-scale integrated (ULSI) circuits is presented. The model explains the die-scale variation of material removal rates due to pattern geometry, and predicts results that are in agreement with experimental ...
Nannaji Saka +3 more
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Effect of Polishing Pad Material Properties on Chemical Mechanical Polishing (Cmp) Processes
MRS Proceedings, 1994ABSTRACTChemical mechanical polishing (CMP) technology has successfully met the stringent requirements of ultraplanarized surfaces in semiconductor manufacture. Commonly, polyurethane based pads have been used to achieve this level of planarization.
Rajeev Bajaj +4 more
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Strategies for Optimal Chemical Mechanical Polishing (CMP) Slurry Design
Journal of Dispersion Science and Technology, 2003Abstract Chemical mechanical polishing (CMP) has become the preferred route for achieving wafer‐level global planarization in microelectronics device manufacturing. However, the micro‐ to molecular‐level mechanisms that control its performance and optimization are not well understood.
G. Bahar Basim +3 more
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Electrochemical View of Copper Chemical-Mechanical Polishing (CMP)
2009Copper is the metal of choice, replacing aluminum in integrated circuit interconnections [1]. This switch was emerged and stimulated due to copper advantage characteristics, such as low resistivity and high immunity to electro-migration, which in turn result in greater circuit reliability and markedly higher clock frequency.
D. Starosvetsky, Y. Ein-Eli
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Use of Malonic Acid in Chemical-Mechanical Polishing ( CMP ) of Tungsten
MRS Proceedings, 1997ABSTRACTThe use of malonic acid as an additive in alumina slurries used for the chemical mechanical polishing ( CMP ) of tungsten has been explored for the reduction of particulate contamination. The principal objective of this work was to delineate conditions under which alumina ...
L. Zhang, S. Raghavan
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Fabrication of volcano emitters using chemical mechanical polishing (CMP)
9th International Vacuum Microelectronics Conference, 2002Volcano emitters with gate dimensions of 6, 9, 15, 25, and 50 /spl mu/m have been processed using chemical mechanical polishing (CMP) for the removal of the emitter material and the gate-to-emitter dielectric on top of the gate plateau. Devices were fabricated with Cr, Cr-cermet, TiW/Au, SiC, and SiC/TiW/Au as the emitter materials and with 1 /spl mu/m
H. Busta +5 more
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Dynamic Contact Characteristics During Chemical Mechanical Polishing (CMP)
MRS Proceedings, 2003AbstractIn chemical mechanical polishing (CMP), it is critical to understand dynamic contact at the pad-particles-wafer interface for desired CMP performance. The dynamic contact is dependent on process variables (platen velocity and down pressure) and particle characteristics (size and concentration), which in turn affect friction force. In this study,
Wonseop Choi +2 more
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Novel Use of Surfactants in Copper Chemical Mechanical Polishing (CMP)
MRS Proceedings, 2005AbstractIn this study, the interaction between several kinds of surfactants and copper surface was examined to control the dissolution of copper during CMP. Among those surfactants, sodium dodecylsulfate (SDS), one of the conventional anionic surfactants, showed effective interaction with copper and significantly suppressed the dissolution of the ...
Youngki Hong +3 more
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Numerical and Experimental Research of the Slurry Film in Chemical Mechanical Polishing (CMP)
Advanced Materials Research, 2010A three-dimensional hydrodynamic lubrication model for chemical-mechanical polishing is presented based on the Reynolds equation and Reynolds boundary condition. By solving the Reynolds equation, the slurry film pressure distribution has been obtained. The effects of minimum film thickness and the wafer tile angle on the film pressure are analyzed, and
Fei Yan Lou, Qian Fa Deng, Ju Long Yuan
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Experimental Investigation on the Roles of Chemical Corrosion and Mechanical Polishing on Copper CMP
Manufacturing Engineering and Materials Handling Engineering, 2004This paper is an experimental investigation on the roles of chemical corrosion and mechanical polishing of the chemical mechanical polishing (CMP) of wafers with copper film of 1,000 nm thickness. Three types of experiments are designed and conducted: chemical corrosion, mechanical polishing, and CMP with φ0.3μm Al2O3 as abrasives.
Jhy-Cherng Tsai +3 more
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