Results 161 to 170 of about 6,173 (209)

Effect of Polishing Pad Material Properties on Chemical Mechanical Polishing (Cmp) Processes

MRS Proceedings, 1994
ABSTRACTChemical mechanical polishing (CMP) technology has successfully met the stringent requirements of ultraplanarized surfaces in semiconductor manufacture. Commonly, polyurethane based pads have been used to achieve this level of planarization.
Rajeev Bajaj, Mukesh Desai, Rahul Jairath, Matthew Stell, Robert Tolles   +4 more
openaire   +1 more source

Electrochemical View of Copper Chemical-Mechanical Polishing (CMP)

2009
Copper is the metal of choice, replacing aluminum in integrated circuit interconnections [1]. This switch was emerged and stimulated due to copper advantage characteristics, such as low resistivity and high immunity to electro-migration, which in turn result in greater circuit reliability and markedly higher clock frequency.
D. Starosvetsky, Y. Ein-Eli
openaire   +1 more source

Novel Use of Surfactants in Copper Chemical Mechanical Polishing (CMP)

MRS Proceedings, 2005
AbstractIn this study, the interaction between several kinds of surfactants and copper surface was examined to control the dissolution of copper during CMP. Among those surfactants, sodium dodecylsulfate (SDS), one of the conventional anionic surfactants, showed effective interaction with copper and significantly suppressed the dissolution of the ...
Youngki Hong, Udaya B. Patri, Suresh Ramakrishnan, S.V. Babu   +3 more
openaire   +1 more source

Mechanisms of the Chemical Mechanical Polishing (CMP) Process in Integrated Circuit Fabrication

CIRP Annals, 2001
Abstract A contact mechanics model that describes the polishing mechanisms of copper-patterned silicon wafers in the fabrication of ultra-large-scale integrated (ULSI) circuits is presented. The model explains the die-scale variation of material removal rates due to pattern geometry, and predicts results that are in agreement with experimental ...
Nannaji Saka, Jiun-Yu Lai, Jung-Hoon Chun, Nam P. Sun   +3 more
openaire   +1 more source

Chemical Mechanical Polishing (CMP) Processes for Manufacturing Optical Silicon Substrates with Shortened Polishing Time

Materials and Manufacturing Processes, 2014
Silicon substrates are used in optical components for infrared systems and mirror systems. An alternative to processing of optical silicon substrates is chemical mechanical polishing (CMP). The conventional CMP uses a three-body abrasion. In this work, a two-body abrasion CMP, called the fixed abrasive CMP, is performed on silicon substrates ...
Z. W. Zhong, Y. B. Tian, J. H. Ng, Y. J. Ang   +3 more
openaire   +1 more source

Relating Friction and Processes Development during Chemical — Mechanical Polishing (CMP)

2009
Die-scale models of CMP have been previously reported for a number of different CMP processes used in integrated circuit (IC) manufacturing, including oxide, dual material shall row trench isolation, and dual material copper damascene processes. Next generation integrated circuits (IC’s) will require the use of porous dielectric materials with shear ...
Filip Ilie, Tiberiu Laurian, Constantin Tita   +2 more
openaire   +1 more source

Managing Corrosion during the Chemical Mechanical Polishing (CMP) of Metal Films

ECS Meeting Abstracts, 2012
Abstract not Available.
James Schlueter, James Henry, Tom X. Shi
openaire   +1 more source

Consumables for the Chemical Mechanical Polishing (Cmp) of Dielectrics and Conductors

MRS Proceedings, 1994
ABSTRACTChemical mechanical polishing (CMP) is rapidly becoming the process of choice for planarizing dielectrics in very large scale integrated circuits. In addition, it is being used at an increasing rate in the removal of metals in order to define conducting levels.
Rahul Jairath, Mukesh Desai, Matt Stell, Robert Tolles, Debra Scherber-Brewer   +4 more
openaire   +1 more source

Use of Malonic Acid in Chemical-Mechanical Polishing ( CMP ) of Tungsten

MRS Proceedings, 1997
ABSTRACTThe use of malonic acid as an additive in alumina slurries used for the chemical mechanical polishing ( CMP ) of tungsten has been explored for the reduction of particulate contamination. The principal objective of this work was to delineate conditions under which alumina ...
L. Zhang, S. Raghavan
openaire   +1 more source

Investigation on Surface Hardening of Polyurethane Pads During Chemical Mechanical Polishing (CMP)

Journal of Electronic Materials, 2010
Temperature control to stabilize the microscale contact surface between the pad and wafer, especially to prevent pad surface degradation, plays an important role in chemical mechanical polishing (CMP) processing of sub- 50-nm devices. In this work, we investigated the phenomenon of pad surface hardening for various process temperatures and developed an
Ji Chul Yang, Dong Won Oh, Ho Joong Kim, Taesung Kim   +3 more
openaire   +1 more source