Results 161 to 170 of about 7,532,110 (199)

Particle Adhesion and Removal in Chemical Mechanical Polishing and Post‐CMP Cleaning

Journal of The Electrochemical Society, 1999
A new model including the effects of polishing pressure and platen speed on particle penetration depth in chemical mechanical polishing (CMP) processes is derived based on the particle adhesion theory, the surface plastic deformation, and the pad‐wafer partial contact.
Fan Zhang, Ahmed A. Busnaina, Goodarz Ahmadi   +2 more
openaire   +1 more source

Chemical mechanical polishing: future processes require CMP tool flexibility

SPIE Proceedings, 1998
Development of Chemical Mechanical Polishing (CMP) tools and CMP processes are proceeding in parallel, but are not independent. Advanced processes require more flexibility and high throughput than available on present production CMP tools. This paper illustrates the development of a new CMP tool where both maximum flexibility and highest throughput are
F. A. Tony Schraub, John Boyd, Jim Valentine, John Curry   +3 more
openaire   +1 more source

Rice Husk Fiber-Based Polishing Pad for Chemical Mechanical Polishing (CMP) of Sapphire

Defect and Diffusion Forum
This research aims to study the properties of polishing pads made from polyurethane mixed with rice husk fiber for use in chemical mechanical polishing (CMP) of sapphire. After cleaning and sizing, the rice husk fiber was modified using hydrochloric acid (HCl).
Sethavut Duangchan, Natthaphon Bun-Athuek, Mighttho Ketsuwan, Muhammad Mudden, Panart Khajornrungruang, Keisuke Suzuki   +5 more
openaire   +1 more source

Models of nanoparticles movement, collision, and friction in chemical mechanical polishing (CMP)

Journal of Nanoparticle Research, 2012
Nanoparticles have been widely used in polishing slurry such as chemical mechanical polishing (CMP) process. The movement of nanoparticles in polishing slurry and the interaction between nanoparticles and solid surface are very important to obtain an atomic smooth surface in CMP process.
openaire   +1 more source

Development of Ceria Slurry for Enhanced Chemical Mechanical Polishing (CMP) Performance

ECS Meeting Abstracts
As the semiconductor device is shrinking and gets complicated, the chemical mechanical polishing (CMP) process has become important. Various types of abrasive particles are used as CMP slurry, and among them, ceria slurry is in the spotlight due to its high material removal rate (MRR) and selectivity on oxide CMP process.
Taesung Kim, Jaewon Lee
openaire   +1 more source

Chemical Mechanical Polishing (CMP)

2013
Steven Danyluk, Sum Huan Ng
openaire   +1 more source

DEVELOPMENT OF AN INTELLIGENT CHEMICAL-MECHANICAL POLISHING (CMP) SYSTEM

Abrasive Technology, 1999
Y. SAMITSU, K. KOBAYASHI, E. YAMAMOTO, E. KERBA, Y. HAYASHI, T. ONODERA   +5 more
openaire   +1 more source

Systematic Yield - Chemical Mechanical Polishing (CMP)

2007
Charles C. Chiang, Jamil Kawa
openaire   +1 more source

Chemical mechanical polishing (CMP) composition

2020
REICHARDT ROBERT, SIEBERT MAX, LAN YONGQING, LAUTER MICHAEL, GUEVENC HACI OSMAN, PROELSS JULIAN, USMAN IBRAHIM SHEIK ANSAR, GOLZARIAN REZA   +7 more
openaire   +1 more source

Polishing Technique and CMP (Chemical & Mechanical Polishing) in Semiconductor Process

Journal of the Society of Mechanical Engineers, 2000
openaire   +1 more source