Results 171 to 180 of about 6,173 (209)

Platinum chemical mechanical polishing (CMP) characteristics for high density ferroelectric memory applications

Microelectronic Engineering, 2007
The key component of ferroelectric random access memory (FeRAM) is a capacitor including a ferroelectric thin film and electrode materials. Platinum is one of the suitable metals which meet requirements such as low resistivity, high thermal stability, and good oxygen resistance. Generally, the ferroelectric and the electrode materials were patterned by
Nam-Hoon Kim, Pil-Ju Ko, Seock Koo Kang, Woo-Sun Lee   +3 more
openaire   +1 more source

Particle Adhesion and Removal in Chemical Mechanical Polishing and Post‐CMP Cleaning

Journal of The Electrochemical Society, 1999
A new model including the effects of polishing pressure and platen speed on particle penetration depth in chemical mechanical polishing (CMP) processes is derived based on the particle adhesion theory, the surface plastic deformation, and the pad‐wafer partial contact.
Fan Zhang, Ahmed A. Busnaina, Goodarz Ahmadi   +2 more
openaire   +1 more source

Surface Interaction of Barrier Slurry Formulation Additives during Chemical Mechanical Polishing (CMP)

ECS Meeting Abstracts, 2010
Abstract not Available.
James Schlueter, Ron Pearlstein, Tom Shi, James Henry   +3 more
openaire   +1 more source

Chemical mechanical polishing (CMP) mechanisms of thermal SiO2 film after high-temperature pad conditioning

Thin Solid Films, 2006
Pad conditioning temperature effects were investigated on the improvement of silicon dioxide chemical mechanical polishing (oxide-CMP) performances. The characteristics of silica slurry including pH and particle size were changed by the process temperature of the frictional heat in a polishing process and the environmental temperature of the remaining ...
Nam-Hoon Kim, Pil-Ju Ko, Gwon-Woo Choi, Yong-Jin Seo, Woo-Sun Lee   +4 more
openaire   +1 more source

Electrochemical Corrosion of CoNiFe Thin Films in Chemical Mechanical Polishing (CMP) Solutions

ECS Meeting Abstracts, 2011
Abstract not Available.
Jun Wang, Yi Jiang
openaire   +1 more source

Development of Ceria Slurry for Enhanced Chemical Mechanical Polishing (CMP) Performance

ECS Meeting Abstracts
As the semiconductor device is shrinking and gets complicated, the chemical mechanical polishing (CMP) process has become important. Various types of abrasive particles are used as CMP slurry, and among them, ceria slurry is in the spotlight due to its high material removal rate (MRR) and selectivity on oxide CMP process.
Taesung Kim, Jaewon Lee
openaire   +1 more source

Chemical Mechanical Polishing (CMP)

2013
Steven Danyluk, Sum Huan Ng
openaire   +1 more source

Systematic Yield - Chemical Mechanical Polishing (CMP)

2007
Charles C. Chiang, Jamil Kawa
openaire   +1 more source

DEVELOPMENT OF AN INTELLIGENT CHEMICAL-MECHANICAL POLISHING (CMP) SYSTEM

Abrasive Technology, 1999
Y. SAMITSU, K. KOBAYASHI, E. YAMAMOTO, E. KERBA, Y. HAYASHI, T. ONODERA   +5 more
openaire   +1 more source

Chemical-mechanical polishing (CMP): a controlled tribocorrosion process

2011
M. Kulkarni, F. Gao, H. Liang
openaire   +1 more source