Results 131 to 140 of about 1,061 (174)

Use of Malonic Acid in Chemical-Mechanical Polishing ( CMP ) of Tungsten

MRS Proceedings, 1997
ABSTRACTThe use of malonic acid as an additive in alumina slurries used for the chemical mechanical polishing ( CMP ) of tungsten has been explored for the reduction of particulate contamination. The principal objective of this work was to delineate conditions under which alumina ...
L. Zhang, S. Raghavan
openaire   +1 more source

Fabrication of volcano emitters using chemical mechanical polishing (CMP)

9th International Vacuum Microelectronics Conference, 2002
Volcano emitters with gate dimensions of 6, 9, 15, 25, and 50 /spl mu/m have been processed using chemical mechanical polishing (CMP) for the removal of the emitter material and the gate-to-emitter dielectric on top of the gate plateau. Devices were fabricated with Cr, Cr-cermet, TiW/Au, SiC, and SiC/TiW/Au as the emitter materials and with 1 /spl mu/m
H. Busta, G. Gammie, S. Skala, M. Fury, M. Stell, T. Myers   +5 more
openaire   +1 more source

Study on Nanoparticle Agglomeration During Chemical Mechanical Polishing (CMP) Performance

Journal of Nanofluids, 2021
The materials used in base fluids and nanoparticles are varied. One- and two-step manufacturing processes are used to create stable and highly conductive nanofluids. Both methods for making nanoparticle suspensions suffer from nanoparticle agglomeration, which is a major problem in any technique that uses nanopowders.
Mohammed A. Y. A. Bakier, Keisuke Suzuki, Panart Khajornrungruang   +2 more
openaire   +1 more source

The Cycle Characteristics of Slurries in Chemical Mechanical Polishing (CMP) of Fused Silica

ChemistrySelect, 2020
Abstract The role of the polishing slurry is crucial in chemical mechanical polishing (CMP) of fused silica (FS). Researching on cycle characteristics of slurry contributes to exploring the deterioration mechanism and prolonging the service time.
Chengxi Kang, Bin Gao, Dan Guo, Haimei Luo, Guoshun Pan   +4 more
openaire   +1 more source

Experimental Investigation on the Roles of Chemical Corrosion and Mechanical Polishing on Copper CMP

Manufacturing Engineering and Materials Handling Engineering, 2004
This paper is an experimental investigation on the roles of chemical corrosion and mechanical polishing of the chemical mechanical polishing (CMP) of wafers with copper film of 1,000 nm thickness. Three types of experiments are designed and conducted: chemical corrosion, mechanical polishing, and CMP with φ0.3μm Al2O3 as abrasives.
Jhy-Cherng Tsai, Yaw-Yi Shieh, Ming-Shih Tsai, Bau-Tong Dai   +3 more
openaire   +1 more source

Numerical and Experimental Research of the Slurry Film in Chemical Mechanical Polishing (CMP)

Advanced Materials Research, 2010
A three-dimensional hydrodynamic lubrication model for chemical-mechanical polishing is presented based on the Reynolds equation and Reynolds boundary condition. By solving the Reynolds equation, the slurry film pressure distribution has been obtained. The effects of minimum film thickness and the wafer tile angle on the film pressure are analyzed, and
Fei Yan Lou, Qian Fa Deng, Ju Long Yuan
openaire   +1 more source

Managing Corrosion during the Chemical Mechanical Polishing (CMP) of Metal Films

ECS Meeting Abstracts, 2012
Abstract not Available.
James Schlueter, James Henry, Tom X. Shi
openaire   +1 more source

An Overview of Recent Advances in Chemical Mechanical Polishing (CMP) of Sapphire Substrates

ECS Transactions, 2013
Nowadays, sapphire substrates are widely employed for GaN light emitting diodes (LEDs) due to their comparatively low cost, large diameter, high quality, optical transparency, and high temperature stability etc. However, in spite of its commercial importance and extended history, the machining of sapphire remains a challenge.
Yu-nong Zhang, Bin Lin, Z.C. Li
openaire   +1 more source

Electrocoagulation of chemical mechanical polishing (CMP) wastewater from semiconductor fabrication

Chemical Engineering Journal, 2003
Treatment of chemical mechanical polishing (CMP) wastewater is investigated. The CMP wastewater, as obtained from a large semiconductor manufacturer, was characterized by high suspended solids (SS) content, high Nephelometric turbidity unit (NTU), chemical oxygen demand (COD) concentration up to 500 mg/l, copper concentration over 100 mg/l and a milky ...
Chen L Lai, Sheng H Lin
openaire   +1 more source

Chemical mechanical polishing: future processes require CMP tool flexibility

SPIE Proceedings, 1998
Development of Chemical Mechanical Polishing (CMP) tools and CMP processes are proceeding in parallel, but are not independent. Advanced processes require more flexibility and high throughput than available on present production CMP tools. This paper illustrates the development of a new CMP tool where both maximum flexibility and highest throughput are
F. A. Tony Schraub, John Boyd, Jim Valentine, John Curry   +3 more
openaire   +1 more source