Results 111 to 120 of about 14,575 (156)

Numerical and Experimental Research of the Slurry Film in Chemical Mechanical Polishing (CMP)

Advanced Materials Research, 2010
A three-dimensional hydrodynamic lubrication model for chemical-mechanical polishing is presented based on the Reynolds equation and Reynolds boundary condition. By solving the Reynolds equation, the slurry film pressure distribution has been obtained. The effects of minimum film thickness and the wafer tile angle on the film pressure are analyzed, and
Fei Yan Lou, Qian Fa Deng, Ju Long Yuan
openaire   +1 more source

Rice Husk Fiber-Based Polishing Pad for Chemical Mechanical Polishing (CMP) of Sapphire

Defect and Diffusion Forum
This research aims to study the properties of polishing pads made from polyurethane mixed with rice husk fiber for use in chemical mechanical polishing (CMP) of sapphire. After cleaning and sizing, the rice husk fiber was modified using hydrochloric acid (HCl).
Sethavut Duangchan, Natthaphon Bun-Athuek, Mighttho Ketsuwan, Muhammad Mudden, Panart Khajornrungruang, Keisuke Suzuki   +5 more
openaire   +1 more source

Chemical mechanical polishing: future processes require CMP tool flexibility

SPIE Proceedings, 1998
Development of Chemical Mechanical Polishing (CMP) tools and CMP processes are proceeding in parallel, but are not independent. Advanced processes require more flexibility and high throughput than available on present production CMP tools. This paper illustrates the development of a new CMP tool where both maximum flexibility and highest throughput are
F. A. Tony Schraub, John Boyd, Jim Valentine, John Curry   +3 more
openaire   +1 more source

Preparation of CeO2 Polishing Powder and Its Performance and Mechanism for Chemical Mechanical Polishing of Optical Glass.

ACS Applied Materials and Interfaces
CeO2 polishing powder is extensively used in chemical mechanical polishing (CMP) applications on Si substrate materials. This study synthesized sub-micrometer, spherical, fluoride-free, and fluorine-doped CeO2 particles using the precipitation method at ...
Wei Zhang, Peiwei Zhang, Yuan Wu, Xin Li, Xu Wang, Mitang Wang, Siqingaowa Jin, Wei Bi, Yan Zhao, Wei Zhou, Dongliang Zhang   +10 more
semanticscholar   +1 more source

Relating Friction and Processes Development during Chemical — Mechanical Polishing (CMP)

2009
Die-scale models of CMP have been previously reported for a number of different CMP processes used in integrated circuit (IC) manufacturing, including oxide, dual material shall row trench isolation, and dual material copper damascene processes. Next generation integrated circuits (IC’s) will require the use of porous dielectric materials with shear ...
Filip Ilie, Tiberiu Laurian, Constantin Tita   +2 more
openaire   +1 more source

A plasticity-based model of material removal in chemical-mechanical polishing (CMP)

, 2001
G. Fu, Abhijit Chandra, S. Guha, G. Subhash   +3 more
semanticscholar   +1 more source

ELECTROCOAGULATION OF CHEMICAL MECHANICAL POLISHING (CMP) WASTEWATER FROM SEMICONDUCTOR FABRICATION

, 2003
C. Lai, Sheng H. Lin
semanticscholar   +1 more source

Chemical mechanical polishing (CMP) of on-axis Si-face 6H-SiC wafer for obtaining atomically flat defect-free surface

Journal of materials science. Materials in electronics, 2013
G. Pan, Yan Zhou, G. Luo, Xiaolei Shi, C. Zou, H. Gong   +5 more
semanticscholar   +1 more source

Effects of ultra-smooth surface atomic step morphology on chemical mechanical polishing (CMP) performances of sapphire and SiC wafers

, 2015
Yan Zhou, G. Pan, Xiaolei Shi, Su‐Wei Zhang, H. Gong, Luo Guihai   +5 more
semanticscholar   +1 more source

Chemical Mechanical Polishing (CMP)

2013
Steven Danyluk, Sum Huan Ng
openaire   +1 more source