A Comparative Analysis of Laser-Ablated Surface Characteristics Between the Si Face and C Face of Silicon Carbide Substrates. [PDF]
Tsai HY +5 more
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Interaction mechanism of Al2O3 abrasive in tantalum chemical mechanical polishing. [PDF]
Lei R +7 more
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Mechanisms of Chemically Promoted Material Removal Examined for Molybdenum and Copper CMP in Weakly Alkaline Citrate-Based Slurries. [PDF]
Gamagedara KU, Roy D.
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Optimization of polishing fluid composition for single crystal silicon carbide by ultrasonic assisted chemical-mechanical polishing. [PDF]
Ye L +6 more
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Green Chemical Shear-Thickening Polishing of Monocrystalline Silicon. [PDF]
Xie J, Shi F, Wang S, Peng X, Hao Q.
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Experimental Study on the Role of Bond Elasticity and Wafer Toughness in Back Grinding of Single-Crystal Wafers. [PDF]
Yun JC, Lim DS.
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Post-Bonding Crack-Induced Di-Cantilever Bending (PBC-DCB): A Novel Method for Quantitative Evaluation of Bonding Strength for Wafer-to-Wafer and Die-to-Wafer Hybrid Bonding. [PDF]
Zheng T +10 more
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The Effect of Sodium Hexametaphosphate on the Dispersion and Polishing Performance of Lanthanum-Cerium-Based Slurry. [PDF]
Mei Y, Chen W, Chen X.
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