Results 131 to 140 of about 1,057 (152)
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Chemical mechanical polishing (CMP) mechanisms of thermal SiO2 film after high-temperature pad conditioning

Thin Solid Films, 2006
Pad conditioning temperature effects were investigated on the improvement of silicon dioxide chemical mechanical polishing (oxide-CMP) performances. The characteristics of silica slurry including pH and particle size were changed by the process temperature of the frictional heat in a polishing process and the environmental temperature of the remaining ...
Nam-Hoon Kim   +4 more
openaire   +1 more source

Development of Ceria Slurry for Enhanced Chemical Mechanical Polishing (CMP) Performance

ECS Meeting Abstracts
As the semiconductor device is shrinking and gets complicated, the chemical mechanical polishing (CMP) process has become important. Various types of abrasive particles are used as CMP slurry, and among them, ceria slurry is in the spotlight due to its high material removal rate (MRR) and selectivity on oxide CMP process.
Taesung Kim, Jaewon Lee
openaire   +1 more source

Chemical Mechanical Polishing (CMP)

2013
Steven Danyluk, Sum Huan Ng
openaire   +1 more source

DEVELOPMENT OF AN INTELLIGENT CHEMICAL-MECHANICAL POLISHING (CMP) SYSTEM

Abrasive Technology, 1999
Y. SAMITSU   +5 more
openaire   +1 more source

Contact Behavior and Chemical Mechanical Polishing (CMP) Performance of Hole-Type Polishing Pad

ECS Journal of Solid State Science and Technology, 2012
Hong Jin Kim   +4 more
openaire   +1 more source

Process Optimization on Chemical Mechanical Polishing (CMP) for Alleviating the Post-polishing Substrate-platen Adhesion

This study addresses a common problem in disk production where disks stick to machines after polishing. The research identifies key factors that reduce this sticking issue and improve product quality. The study reveals that polishing surface speed significantly influences disk adhesion.
openaire   +1 more source

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