A Basic Study on Chemical Mechanical Polishing (CMP)
The Proceedings of The Manufacturing & Machine Tool Conference, 2002 Akiyoshi Oda +3 more
openalex +3 more sources
Electrochemical Corrosion of CoNiFe Thin Films in Chemical Mechanical Polishing (CMP) Solutions [PDF]
ECS Meeting Abstracts, 2011 Abstract not Available.
Jun Wang, Yi Jiang
openalex +2 more sources
Oxide Planarization of Trench Structure using Chemical Mechanical Polishing(CMP) [PDF]
Journal of the Korean Institute of Electrical and Electronic Material Engineers, 2002 ;;;
openalex +3 more sources
Chemical Mechanical Polishing of Plasma-Modified Cu/Polymer Interfaces for Advanced Hybrid Bonding. [PDF]
Adv Sci (Weinh)Hybrid bonding demands planarization of Cu/polymer interfaces, but soft polymers like benzocyclobutene (BCB) are difficult to polish by conventional chemical mechanical polishing (CMP). It is demonstrated that Ar plasma modification transforms BCB into a CMP‐compatible surface, enabling effective planarization and void‐free bonding.
Kang S +5 more
europepmc +2 more sources
Polishing Technique and CMP (Chemical & Mechanical Polishing) in Semiconductor Process
Journal of the Society of Mechanical Engineers, 2000 T.K. Doy
openalex +3 more sources
A Selective Deposition Strategy of Ultrathin Metal Layer on Sub-Micrometer-Pitch Cu Interconnection for Low-Temperature Hybrid Bonding. [PDF]
Small SciConventional hybrid bonding approaches require high temperatures and long annealing times, limiting their compatibility with advanced semiconductor packaging. To overcome this limitation, various interfacial metals have been selected to enable uniform electroless deposition on sub‐micrometer Cu pads while preserving dielectric integrity, offering a low‐
Otgonbayar Z +10 more
europepmc +2 more sources
Multi‐Functional ZnO–Te Heterojunction Devices Enabling Compact Frequency Quadrupler
Advanced Functional Materials, EarlyView.Wafer‐scale ZnO–Te heterojunction devices featuring tunable double negative differential transconductance (D‐NDT) are demonstrated at ≤ 200°C. Leveraging this unique characteristic, a single‐stage frequency quadrupler is realized, achieving a 64%–75% reduction in device count.
Jae Hyeon Jun +8 more
wiley +1 more source
Treating chemical mechanical polishing (CMP) wastewater by electro-coagulation-flotation process with surfactant [PDF]
Journal of Hazardous Materials, 2005 The effect of surfactants on the treatment of chemical mechanical polishing (CMP) wastewater by electro-coagulation-flotation (ECF) process was studied. Two surfactants, cetyltrimethylammonium bromide (CTAB) and sodium dodecylsulfate (SDS) were employed in this study to compare the effect of cationic (CTAB) and anodic (SDS) surfactants on ECF.
Hu, C.Y., Lo, S.L., Li, C.M., Kuan, W.H.
openaire +2 more sources
Advanced Science, EarlyView.This work demonstrates a heterojunction‐gated infrared phototransistor for broadband detection from 350 to 1700 nm. By suppressing defect states on nonpolar (100) facets of large PbS quantum dots via hybrid ligand passivation, the device achieves a room‐temperature detectivity of 5.7 × 1013 Jones at 1650 nm.
Hongkun Duan +14 more
wiley +1 more source
Carbon Energy, EarlyView.Keggin‐type Al‐POM‐coated silica achieves selective surface oxidation of amorphous carbon through electrostatic attraction and proton‐coupled oxidation, tailoring interfacial properties for lithium‐ion batteries and semiconductor processes. ABSTRACT Amorphous carbon is widely used in energy storage and semiconductor technologies, where surface ...
Ganggyu Lee +13 more
wiley +1 more source