Results 91 to 100 of about 1,091,701 (330)

Optimal and Robust Design Method for Two-Chip Out-of-Plane Microaccelerometers [PDF]

, 2010
In this paper, an optimal and robust design method to implement a two-chip out-of-plane microaccelerometer system is presented. The two-chip microsystem consists of a MEMS chip for sensing the external acceleration and a CMOS chip for signal processing ...
Amini, Bracke, Byoungdoo Choi, Dong-il Dan Cho, Hong, Houlihan, Hsu, Hyoungho Ko, Karim, Kim, Ko, Lee, Leland, Liu, Macdonald, Mariani, Minikes, Palmer, Sangmin Lee, Selvakumar, Sharma, Sun, Wang, Yazdi, Younis, Zhang   +25 more
core   +3 more sources

Spectrally Tunable 2D Material‐Based Infrared Photodetectors for Intelligent Optoelectronics

Advanced Functional Materials, EarlyView.
Intelligent optoelectronics through spectral engineering of 2D material‐based infrared photodetectors. Abstract The evolution of intelligent optoelectronic systems is driven by artificial intelligence (AI). However, their practical realization hinges on the ability to dynamically capture and process optical signals across a broad infrared (IR) spectrum.
Junheon Ha, Yingshan Ma, Yong Nam An, Sung‐Un An, Hyeon Hak Jung, Suvi‐Tuuli Varjamo, Jiwon Yoo, Junho Min, Hanvit Kim, Faisal Ahmed, Sang Hoon Chae, Young Min Song, Weiwei Cai, Tawfique Hasan, Zhipei Sun, Dong‐Ho Kang, Hyeon‐Jin Shin, Yunyun Dai, Hoon Hahn Yoon   +18 more
wiley   +1 more source

A 0.8 V 0.23 nW 1.5 ns Full-Swing Pass-Transistor XOR Gate in 130 nm CMOS

Active and Passive Electronic Components, 2013
A power efficient circuit topology is proposed to implement a low-voltage CMOS 2-input pass-transistor XOR gate. This design aims to minimize power dissipation and reduce transistor count while at the same time reducing the propagation delay.
Nabihah Ahmad, Rezaul Hasan
doaj   +1 more source

Alkali Ion‐Incorporated HfO2 Dielectrics for Reconfigurable Neuromorphic Computing

Advanced Functional Materials, EarlyView.
This work presents an indium gallium zinc oxide (IGZO) transistor with an alkali cation‐integrated hafnium dioxide (HfO2) dielectric exhibiting synaptic behavior via ion retention. The solution‐based film fabrication strategy overcomes the limitations of atomic layer deposition (ALD) and precursor coating, enabling the control of synaptic retention ...
Seung Yeon Ki, In Cheol Kwak, Seonkwon Kim, Jihyun Kim, Dong Gue Roe, Se‐Jin Kim, Joohoon Kang, Jeong Ho Cho   +7 more
wiley   +1 more source

Phosphorus implants for off-state improvement of SOI CMOS fabricated at low temperature [PDF]

, 2009
A study on the influence of phosphorus implanted source/drain features on the off-state performance of transistors fabricated in thin-film crystalline silicon at low temperature is presented.
Singh, Siddhartha
core   +1 more source

Approaches to Single Photon Detection

, 2008
We present recent results on our development of single photon detectors, including: gated and free-running InGaAs/InP avalanche photodiodes; hybrid detection systems based on sum-frequency generation and Si APDs; and SSPDs (superconducting single photon ...
Cheung, Divochiy, E. Koller, Eraerds, Gisin, Gisin, Gol’tsman, H. Zbinden, J. Zhang, J.-D. Gautier, Karstad, Legré, N. Curtz, N. Gisin, N. Walenta, P. Eraerds, R.T. Thew, Stucki, Thew, Thew, Wegmuller, Zhang   +21 more
core   +2 more sources

Electron–Matter Interactions During Electron Beam Nanopatterning

Advanced Functional Materials, EarlyView.
This article reviews the electron–matter interactions important to nanopatterning with electron beam lithography (EBL). Electron–matter interactions, including secondary electron generation routes, polymer radiolysis, and electron beam induced charging, are discussed.
Camila Faccini de Lima, Prathiba Thamizhavel, Taylor J. Woehl   +2 more
wiley   +1 more source

Investigation of Defect Formation in Monolithic Integrated GaP Islands on Si Nanotip Wafers [PDF]

The monolithic integration of gallium phosphide (GaP), with its green band gap, high refractive index, large optical non-linearity, and broad transmission range on silicon (Si) substrates, is crucial for Si-based optoelectronics and integrated photonics.
Hammud, Adnan, Hatami, Fariba, Häusler, Ines, Skibitzki, Oliver, Řepa, Rostislav   +4 more
core   +1 more source

In Materia Shaping of Randomness with a Standard Complementary Metal‐Oxide‐Semiconductor Transistor for Task‐Adaptive Entropy Generation

Advanced Functional Materials, EarlyView.
This study establishes a materials‐driven framework for entropy generation within standard CMOS technology. By electrically rebalancing gate‐oxide traps and Si‐channel defects in foundry‐fabricated FDSOI transistors, the work realizes in‐materia control of temporal correlation – achieving task adaptive entropy optimization for reinforcement learning ...
Been Kwak, Ryun‐Han Koo, Youngchan Cho, Changhyeon Han, Dongbin Kim, Soi Jeong, Yunho Shin, Joonhyeok Choi, Jiseong Im, Jonghyun Ko, Jong‐Ho Lee, Jangsaeng Kim, Youngho Kang, Wonjun Shin, Daewoong Kwon   +14 more
wiley   +1 more source

Functional layers for CIGS solar cell on-chip fabrication during post-processing [PDF]

, 2008
The ubiquitous deploying of wireless electronic devices due to pervasive computing results in the idea of Energy Scavenging, i.e., harvesting ambient energy from surroundings of the electronic devices [1]. As an approach to the most practical realization
Kovalgin, Alexeij Y., Lu, J., Schmitz, Jurriaan   +2 more
core   +1 more source