Results 101 to 110 of about 2,629 (140)
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Proceedings of IEEE Sensors, 2003
The gyroscope reported in this paper is a lateral-axis angular rate sensor with in-plane vibration and out-of-plane Coriolis acceleration sensing. The sensor plus on-chip CMOS circuitry is about 1 mm by 1 mm in size and is fabricated by a post-CMOS micromachining process that uses interconnect metal layers as etching mask(s) and a single-crystal ...
null Huikai Xie, G.K. Fedder
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The gyroscope reported in this paper is a lateral-axis angular rate sensor with in-plane vibration and out-of-plane Coriolis acceleration sensing. The sensor plus on-chip CMOS circuitry is about 1 mm by 1 mm in size and is fabricated by a post-CMOS micromachining process that uses interconnect metal layers as etching mask(s) and a single-crystal ...
null Huikai Xie, G.K. Fedder
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Frequency-tunable CMOS-MEMS slot antenna
Proceedings of the 2012 IEEE International Symposium on Antennas and Propagation, 2012This paper presented a frequency-reconfigurable slot antenna fabricated in 0.18-µm CMOS process with a chip size of 1.2×1.2 mm2. By utilizing the multi-state actuators, the frequency of this antenna can be switched to 43, 47, 50.5, 54, 57.5 GHz with return loss better than 20 dB. The measured antenna patterns agree well with the simulation results.
Chun-Chi Lin +3 more
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(Invited) CMOS MEMS Integration
ECS Transactions, 2011The "More than Moore" trend in the microelectronics industry is driving a renewed interest in mixed-physics CMOS MEMS integration. Integration becomes a necessity for multi-component microsystems, where interconnect issues are significant. Integration also drives down parasitic capacitances and provides opportunities for ultra-low-power microsystems ...
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A CMOS-MEMS Thermoelectric Infrared Sensor
2010 International Conference on Electrical and Control Engineering, 2010This paper presents a thermoelectric infrared (IR) sensor which comprise of an infrared detector and a readout circuitry. It is designed by TSMC 0.35 μm CMOS process with subsequent micromachining technology. The presented infrared sensing device can achieve the responsivity of 1277.92 V/W and time constant of 2.63 ms. The instrumentation amplifier (IA)
Hung-Yu Wang +3 more
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CMOS-MEMS free-free beam resonators
2010 Proceedings of the European Solid State Device Research Conference, 2010In this paper a 25 MHz free-free beam flexural resonator monolithically integrated in a 0.35 um CMOS technology is presented. A comparison between the frequency response and electrical characteristics between free-free beam and clamped-clamped beams shows higher qualities factor for free-free beams which will allow better oscillators for frequency ...
J.L. Lopez +6 more
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Optimization of unreleased CMOS-MEMS RBTs
2016 IEEE International Frequency Control Symposium (IFCS), 2016In this paper, we present an efficient framework for optimization of MEMS resonators based on model order reduction and memoization to significantly speed-up computations 40 x). Owing to their technological importance and numerous applications, unreleased CMOS resonant body transistors (RBTs) are considered.
Bichoy Bahr, Luca Daniel, Dana Weinstein
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A sub-1G CMOS-MEMS accelerometer
2015 IEEE SENSORS, 2015We report experimental evaluation results of a CMOS (complementary-metal-oxide semiconductor)-MEMS (microelectromechanical systems) accelerometer for sensing sub-1G (1G = 9.8 m/s2) acceleration. The sub-1G MEMS sensor has been successfully implemented on a 180-nm CMOS LSI (large scale integrated circuits) for the first time.
Daisuke Yamane +8 more
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Monolithic z-axis CMOS MEMS accelerometer
Microelectronic Engineering, 2014Display Omitted We propose a monolithic z-axis CMOS MEMS accelerometer with low power consumption.The sensor is integrated with circuits in a wafer-level 0.18-µm CMOS MEMS process.The bending displacements in the microstructures can be controlled well.The use of CMOS-compatible MEMS process can reduce the cost of chip fabrication.
Sheng-Hsiang Tseng +3 more
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CMOS-MEMS resonant mixer-filters
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest., 2006RF mixer-filters made by micromachining composite metal and dielectric interconnect layers within foundry CMOS are a potential component in on-chip receivers. Through the electrostatic voltage-squared nonlinearity, mixer-filters down-convert to an intermodulation frequency set by the mechanical resonance enabling higher gain than resonant filters ...
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A CMOS-MEMS Inertial Measurement Unit
2010 IEEE Sensors, 2010This paper introduces the first monolithic integration of a 3-axis accelerometer, a 2-axis magnetometer and a fullcustom front-end electronics. This complete Inertial Measurement Unit (IMU) has been designed on a single die of 7.5mm² in a 0.35μm CMOS technology.
Alandry, Boris +3 more
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