Results 61 to 70 of about 644,668 (339)

CMOS OTA-C high-frequency sinusoidal oscillators [PDF]

open access: yes, 1991
Several topology families are given to implement practical CMOS sinusoidal oscillators by using operational transconductance amplifier-capacitor (OTA-C) techniques. Design techniques are proposed taking into account the CMOS OTA's dominant nonidealities.
Huertas Díaz, José Luis   +3 more
core   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

open access: yesAdvanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone   +11 more
wiley   +1 more source

Recent progress of oxide-TFT-based inverter technology

open access: yesJournal of Information Display, 2021
Oxide semiconductor-based thin-film transistor (oxide-TFT) technology have gained significant attention since the innovation of n-channel oxide-TFT using ZnO and amorphous In–Ga–Zn–O (a-IGZO) channels because of their superior device properties including
Kenji Nomura
doaj   +1 more source

CMOS design of cellular APAPs and FPAPAPs: an overview [PDF]

open access: yes, 2002
CNN-based analog visual microprocessors have similarities with the so-called Single Instruction Multiple Data systems, although they work directly on analog signal representations obtained through embedded optical sensors and hence do not need a frontend
Rodríguez Vázquez, Ángel Benito
core   +1 more source

Prospects of Electric Field Control in Perpendicular Magnetic Tunnel Junctions and Emerging 2D Spintronics for Ultralow Energy Memory and Logic Devices

open access: yesAdvanced Functional Materials, EarlyView.
Electric control of magnetic tunnel junctions offers a path to drastically reduce the energy requirements of the device. Electric field control of magnetization can be realized in a multitude of ways. These mechanisms can be integrated into existing spintronic devices to further reduce the operational energy.
Will Echtenkamp   +7 more
wiley   +1 more source

Smart-Pixel Cellular Neural Networks in Analog Current-Mode CMOS Technology [PDF]

open access: yes, 1994
This paper presents a systematic approach to design CMOS chips with concurrent picture acquisition and processing capabilities. These chips consist of regular arrangements of elementary units, called smart pixels.
Domínguez Castro, Rafael   +4 more
core   +1 more source

Reconfigurable Three‐Dimensional Superconducting Nanoarchitectures

open access: yesAdvanced Functional Materials, EarlyView.
3D superconducting nanostructures offer new possibilities for emergent physical phenomena. However, fabricating complex geometries remains challenging. Here 3D nanoprinting of complex 3D superconducting nanoarchitectures is established. As well as propagating superconducting vortices in 3D, anisotropic superconducting properties with geometric ...
Elina Zhakina   +11 more
wiley   +1 more source

Miniaturized 0.13-μm CMOS Front-End Analog for AlN PMUT Arrays

open access: yesSensors, 2020
This paper presents an analog front-end transceiver for an ultrasound imaging system based on a high-voltage (HV) transmitter, a low-noise front-end amplifier (RX), and a complementary-metal-oxide-semiconductor, aluminum nitride, piezoelectric ...
Iván Zamora   +3 more
doaj   +1 more source

Overview of CMOS process and design options for image sensor dedicated to space applications [PDF]

open access: yes, 2005
With the growth of huge volume markets (mobile phones, digital cameras…) CMOS technologies for image sensor improve significantly. New process flows appear in order to optimize some parameters such as quantum efficiency, dark current, and conversion gain.
Corbière, Franck   +2 more
core   +1 more source

Pushing the limits of CMOS optical parametric amplifiers with USRN:Si7N3 above the two-photon absorption edge

open access: yesNature Communications, 2017
CMOS platforms operating at the telecommunications wavelength either reside within the highly dissipative two-photon regime in silicon-based optical devices, or possess small nonlinearities. Bandgap engineering of non-stoichiometric silicon nitride using
K. Ooi   +9 more
semanticscholar   +1 more source

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