Results 41 to 50 of about 58,331 (251)

Monolithic ultrasound fingerprint sensor. [PDF]

, 2017
This paper presents a 591×438-DPI ultrasonic fingerprint sensor. The sensor is based on a piezoelectric micromachined ultrasonic transducer (PMUT) array that is bonded at wafer-level to complementary metal oxide semiconductor (CMOS) signal processing ...
Boser, Bernhard E, Daneman, Michael J, Horsley, David A, Jiang, Xiaoyue, Lu, Yipeng, Ng, Eldwin J, Tang, Hao-Yen, Tsai, Julius M   +7 more
core   +1 more source

Low-Voltage 96 dB Snapshot CMOS Image Sensor with 4.5 nW Power Dissipation per Pixel

Sensors, 2012
Modern “smart” CMOS sensors have penetrated into various applications, such as surveillance systems, bio-medical applications, digital cameras, cellular phones and many others. Reducing the power of these sensors continuously challenges designers.
Orly Yadid-Pecht, Alexander Fish, Alexander Belenky, Adam Teman, Arthur Spivak   +4 more
doaj   +1 more source

Radiation Effects in Pinned Photodiode CMOS Image Sensors: Pixel Performance Degradation Due to Total Ionizing Dose [PDF]

, 2012
Several Pinned Photodiode (PPD) CMOS Image Sensors (CIS) are designed, manufactured, characterized and exposed biased to ionizing radiation up to 10 kGy(SiO2 ).
Cervantes, Paola, Corbière, Franck, Estribeau, Magali, Gaillardin, Marc, Girard, Sylvain, Goiffon, Vincent, Magnan, Pierre, Marcandella, Claude, Marcelot, Olivier, Martin-Gonthier, Philippe, Molina, Romain, Paillet, Philippe, Virmontois, Cédric   +12 more
core   +3 more sources

An investigation of γ radiation detection with a CMOS imaging sensor

Scientific Reports
In this study, a feasibility of γ radiation detection using complementary metal-oxide semiconductor (CMOS) image sensors with a neural network algorithm to extract the γ rays interacted pixels has been investigated.
Jian Lin, Feipeng Wang, Jinkai Wang, Zhixin Xu, Minghan Yang, Bing Hong, Nuo Yong, Dongqin Xia, Daochuan Ge, Shuifa Shen   +9 more
doaj   +1 more source

Polarisation analysing complementary metal-oxide semiconductor image sensor in 65-nm standard CMOS technology

The Journal of Engineering, 2013
In the present study, the authors demonstrate a complementary metal-oxide semiconductor (CMOS) image sensor implemented with on-chip polarisers using 65-nm standard CMOS technology.
N. Wakama, D. Okabayashi, T. Noda, K. Sasagawa, T. Tokuda, K. Kakiuchi, J. Ohta   +6 more
doaj   +1 more source

All-Analog Silicon Integration of Image Sensor and Neural Computing Engine for Image Classification

IEEE Access, 2022
We have designed a fully-integrated analog CMOS cognitive image sensor based on a two-layer artificial neural network and targeted to low-resolution image classification.
Benjamin Zambrano, Sebastiano Strangio, Tommaso Rizzo, Esteban Garzon, Marco Lanuzza, Giuseppe Iannaccone   +5 more
doaj   +1 more source

Low power CMOS iImage sensor for face recognition [PDF]

, 2020
Imaging system is suitable for different purposes, depending upon their final application. Digital cameras, camcorders, webcams, security cameras or infrared (IR) cameras are well-known imaging systems.
Chan, Kit Heng, Ruslan, Siti Hawa
core  

Overview of ionizing radiation effects in image sensors fabricated in a deep-submicrometer CMOS imaging technology [PDF]

, 2009
An overview of ionizing radiation effects in imagers manufactured in a 0.18-μm CMOS image sensor technology is presented. Fourteen types of image sensors are characterized and irradiated by a 60Co source up to 5 kGy.
Estribeau, Magali, Goiffon, Vincent, Magnan, Pierre   +2 more
core   +1 more source

Solar-powered CMOS image sensor

Electronics Letters, 2010
A first prototype of a solar-powered CMOS image sensor is presented. Extremely low power consumption is obtained with sub-threshold digital design and event-driven architecture. The general architecture is described together with simulations and preliminary test results of a 4×4-pixel array are presented. Future directions are given.
Perenzoni, Matteo, Gonzo, Lorenzo
openaire   +2 more sources

Nuclear pore links Fob1‐dependent rDNA damage relocation to lifespan control

FEBS Open Bio, EarlyView.
Damaged rDNA accumulates at a specific perinuclear interface that couples nucleolar escape with nuclear envelope association. Nuclear pores at this site help inhibit Fob1‐induced rDNA instability. This spatial organization of damage handling supports a functional link between nuclear architecture, rDNA stability, and replicative lifespan in yeast.
Yamato Okada, Mina Iwaki, Kyosuke Hagiri, Rei Izumi, Masahiko Harata, Chihiro Horigome   +5 more
wiley   +1 more source