Results 71 to 80 of about 58,142 (300)
Single-Event Effects in CMOS Image Sensors [PDF]
In this paper, 3T active pixel sensors (APS) are exposed to heavy ions (N, Ar, Kr, Xe), and single-event effects (SEE) are studied. Devices were fully functional during exposure, no single-event latch-up (SEL) or single-event functional interrupt (SEFI) happened.
Lalucaa, Valerian +4 more
openaire +4 more sources
This study investigates electromechanical PUFs that improve on traditional electric PUFs. The electron transport materials are coated randomly through selective ligand exchange. It produces multiple keys and a key with motion dependent on percolation and strain, and approaches almost ideal inter‐ and intra‐hamming distances.
Seungshin Lim +7 more
wiley +1 more source
An Ultra-Low Power CMOS Image Sensor with On-Chip Energy Harvesting and Power Management Capability
An ultra-low power CMOS image sensor with on-chip energy harvesting and power management capability is introduced in this paper. The photodiode pixel array can not only capture images but also harvest solar energy.
Ismail Cevik +4 more
doaj +1 more source
A high dynamic range digital LinLog CMOS image sensor architecture based on Event Readout of pixels and suitable for low voltage operation [PDF]
Several approaches have been developed to extend the dynamic range of image sensor in order to keep all the information content of natural scenes covering a very broad range of illumination.
Guilvard, Alexandre +3 more
core
Performance of a novel wafer scale CMOS active pixel sensor for bio-medical imaging [PDF]
Recently CMOS Active Pixels Sensors (APSs) have become a valuable alternative to amorphous Silicon and Selenium Flat Panel Imagers (FPIs) in bio-medical imaging applications.
A C Konstantinidis +23 more
core +1 more source
Photonic Engineering Enables All‐Passive Upconversion Imaging with Low‐Intensity Near‐Infrared Light
A passive upconversion imaging system enables the observation of scenes illuminated by low‐intensity incoherent near‐infrared light from 750 to 930 nm, by converting it into the visible without the use of external power. The upconverter is enabled by triplet–triplet annihilation in a bulk heterojunction, with absorption enhanced by plasmonic resonators
Rabeeya Hamid +13 more
wiley +1 more source
With their significant features, the applications of complementary metal-oxidesemiconductor (CMOS) image sensors covers a very extensive range, from industrialautomation to traffic applications such as aiming systems, blind guidance, active/passiverange ...
Joe-Air Jiang +2 more
doaj
Two‐photon lithography (TPL) enables 3D magnetic nanostructures with unmatched freedom in geometry and material choice. Advances in voxel control, deposition, and functionalization open pathways to artificial spin ices, racetracks, microrobots, and a number of additional technological applications.
Joseph Askey +5 more
wiley +1 more source
The Design of a Single-Bit CMOS Image Sensor for Iris Recognition Applications
This paper presents a single-bit CMOS image sensor (CIS) that uses a data processing technique with an edge detection block for simple iris segmentation. In order to recognize the iris image, the image sensor conventionally captures high-resolution image
Keunyeol Park, Minkyu Song, Soo Youn Kim
doaj +1 more source
A Pixel Design of a Branching Ultra-Highspeed Image Sensor
A burst image sensor named Hanabi, meaning fireworks in Japanese, includes a branching CCD and multiple CMOS readout circuits. The sensor is backside-illuminated with a light/charge guide pipe to minimize the temporal resolution by suppressing the ...
Nguyen Hoai Ngo +8 more
doaj +1 more source

