Results 81 to 90 of about 3,832 (187)
Ionization versus displacement damage effects in proton irradiated CMOS sensors manufactured in deep submicron process [PDF]
, 2009 Proton irradiation effects have been studied on CMOS image sensors manufactured in a 0.18 μm technology dedicated to imaging. The ionizing dose and displacement damage effects were discriminated and localized thanks to 60Co irradiations and large ...
Bernard, Frédéric +4 more
core +2 more sources
Rapid Structural Analysis of Natural Products Using MicroED
Small, EarlyView.The cryoEM method, MicroED used for rapid analysis and structure determination of natural products that remained unattainable by other structural biology methods ABSTRACT Structural analysis of natural products remains challenging due to their inherent complexity and limited availability.
Jieye Lin +3 more
wiley +1 more source
A Wide Dynamic Range CMOS Image Sensor with a Charge Splitting Gate and Two Storage Diodes
Sensors, 2019 In this paper, a wide dynamic range (WDR) CMOS image sensor (CIS) with a charge splitting gate (SG) and two storage diodes (SDs) is presented. By using single-gate on/off control with the SG, photocurrent path to the first (SD1) or second storage diodes (
Minho Lee +6 more
doaj +1 more source
Development of Reliable, High Performance WLCSP for BSI CMOS Image Sensor for Automotive Application
Sensors, 2020 To meet the urgent market demand for small package size and high reliability performance for automotive CMOS image sensor (CIS) application, wafer level chip scale packaging (WLCSP) technology using through silicon vias (TSV) needs to be developed to ...
Tianshen Zhou +4 more
doaj +1 more source
Small Methods, EarlyView.Upconversion nanoparticle photoluminescence was used to quantify heat burden during femtosecond direct laser writing of bioinks in real time. Transient temperature spikes above 120–140°C demonstrate the need for a stringent process optimization, and fast 20 µm/s scan speeds were established to maintain physiological conditions.
Amirbahador Zeynali +2 more
wiley +1 more source
Results in Physics, 2020 The dark current random telegraph signal (DC-RTS) has been investigated in a four-transistor pinned photodiode 0.18-μm backside illuminated CMOS image sensor (BSI CIS). The sensors were irradiated by high energy protons of 50, 60 and 70 MeV, respectively.
Bingkai Liu +9 more
doaj +1 more source
Low-frequency noise impact on CMOS image sensors [PDF]
, 2009 CMOS image sensors are nowadays extensively used in imaging applications even for high-end applications. This is really possible thanks to a reduction of noise obtained, among others, by Correlated Double Sampling (CDS) readout.
Magnan, Pierre +1 more
core
Radiation Effects in CMOS Isolation Oxides: Differences and Similarities With Thermal Oxides [PDF]
, 2013 Radiation effects in thick isolation oxides of modern CMOS technologies are investigated using dedicated test structures designed using two commercial foundries.
Estribeau, Magali +7 more
core +3 more sources
Insect Science, EarlyView.The release of gravid Exochomus quadripustulatus females proved to be effective in containing Toumeyella parvicornis infestations on stone pine trees, under open‐field condition. The ladybugs caused a lower infestation level compared to the trees that did not receive any ladybugs during the observation season.
Nicolò Di Sora +4 more
wiley +1 more source
A 45 nm Stacked CMOS Image Sensor Process Technology for Submicron Pixel
Sensors, 2017 A submicron pixel’s light and dark performance were studied by experiment and simulation. An advanced node technology incorporated with a stacked CMOS image sensor (CIS) is promising in that it may enhance performance. In this work, we demonstrated a low
Seiji Takahashi +17 more
doaj +1 more source