Results 51 to 60 of about 49,365 (285)

Radiation Effects in Pinned Photodiode CMOS Image Sensors: Pixel Performance Degradation Due to Total Ionizing Dose [PDF]

open access: yes, 2012
Several Pinned Photodiode (PPD) CMOS Image Sensors (CIS) are designed, manufactured, characterized and exposed biased to ionizing radiation up to 10 kGy(SiO2 ).
Cervantes, Paola   +12 more
core   +3 more sources

Solar-powered CMOS image sensor

open access: yesElectronics Letters, 2010
A first prototype of a solar-powered CMOS image sensor is presented. Extremely low power consumption is obtained with sub-threshold digital design and event-driven architecture. The general architecture is described together with simulations and preliminary test results of a 4×4-pixel array are presented. Future directions are given.
Perenzoni, Matteo, Gonzo, Lorenzo
openaire   +2 more sources

Nuclear pore links Fob1‐dependent rDNA damage relocation to lifespan control

open access: yesFEBS Open Bio, EarlyView.
Damaged rDNA accumulates at a specific perinuclear interface that couples nucleolar escape with nuclear envelope association. Nuclear pores at this site help inhibit Fob1‐induced rDNA instability. This spatial organization of damage handling supports a functional link between nuclear architecture, rDNA stability, and replicative lifespan in yeast.
Yamato Okada   +5 more
wiley   +1 more source

Intermolecular Interactions as Driving Force of Increasing Multiphoton Absorption in a Perylene Diimide‐Based Coordination Polymer

open access: yesAdvanced Functional Materials, EarlyView.
This study uncovers the unexplored role of intermolecular interactions in multiphoton absorption in coordination polymers. By analyzing [Zn2tpda(DMA)2(DMF)0.3], it shows how the electronic coupling of the chromophores and confinement in the MOF enhance two‐and three‐photon absorption.
Simon Nicolas Deger   +11 more
wiley   +1 more source

Backside passivation for improving the noise performance in CMOS image sensor

open access: yesAIP Advances, 2020
Great efforts have been made in the past few years to reduce the white pixel noise in complementary metal–oxide–semiconductor (CMOS) image sensors. As a promising approach, the surface passivation method focusing on the field-effect passivation has been ...
Peng Sun   +7 more
doaj   +1 more source

Image lag optimisation in a 4T CMOS image sensor for the JANUS camera on ESA's JUICE mission to Jupiter [PDF]

open access: yes, 2018
The CIS115, the imager selected for the JANUS camera on ESA’s JUICE mission to Jupiter, is a Four Transistor (4T) CMOS Image Sensor (CIS) fabricated in a 0.18 µm process.
Allanwood, E. A. H.   +6 more
core   +1 more source

In Situ Study of Resistive Switching in a Nitride‐Based Memristive Device

open access: yesAdvanced Functional Materials, EarlyView.
In situ TEM biasing experiment demonstrates the volatile I‐V characteristic of MIM lamella device. In situ STEM‐EELS Ti L2/L3 ratio maps provide direct evidence of the oxygen vacancies migrations under positive/negative electrical bias, which is critical for revealing the RS mechanism for the MIM lamella device.
Di Zhang   +19 more
wiley   +1 more source

RTS noise impact in CMOS image sensors readout circuit [PDF]

open access: yes, 2010
CMOS image sensors are nowadays widely used in imaging applications even for high end applications. This is really possible thanks to a reduction of noise obtained, among others, by Correlated Double Sampling (CDS) readout.
Magnan, Pierre   +1 more
core   +1 more source

Three‐dimensional Antimony Sulfide Based Flat Optics

open access: yesAdvanced Functional Materials, EarlyView.
This work presents the development of a grayscale electron beam lithography (g‐EBL) method for fabricating antimony trisulfide (Sb2S3) nanostructures with customizable 3D profiles. The refractive index of g‐EBL patterned Sb2S3 is determined based on the synergy of genetic algorithm and transfer matrix method.
Wei Wang   +18 more
wiley   +1 more source

Control of Polarization and Polar Helicity in BiFeO3 by Epitaxial Strain and Interfacial Chemistry

open access: yesAdvanced Functional Materials, EarlyView.
In BiFeO3 thin films, the interplay of interfacial chemistry, electrostatics, and epitaxial strain is engineered to stabilize homohelicity in polarization textures at the domain scale. The synergistic use of a Bi2O2‐terminated Aurivillius buffer layer and a highly anisotropic compressive epitaxial strain offers new routes to control the polar‐texture ...
Elzbieta Gradauskaite   +5 more
wiley   +1 more source

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