Results 31 to 40 of about 72,784 (298)

A CMOS-Based Capacitive Biosensor for Detection of a Breast Cancer MicroRNA Biomarker

IEEE Open Journal of Nanotechnology, 2020
Breast cancer ranks among the most common cancers worldwide and can be lethal when not diagnosed early due to the high probability of metastasis. Herein a complementary metal-oxide-semiconductor (CMOS)-based capacitive nano-biosensor was developed to ...
YU-Husan Kuo, YI-Sin Chen, PO-Chiun Huang, Gwo-Bin Lee   +3 more
doaj   +1 more source

Front-end Electronics for Silicon Trackers readout in Deep Sub-Micron CMOS Technology: The case of Silicon strips at the ILC [PDF]

, 2007
For the years to come, Silicon strips detectors will be read using the smallest available integrated technologies for room, transparency, and power considerations. CMOS, Bipolar- CMOS and Silicon-Germanium are presently offered in deepsubmicron (250 down
David, J, Dhellot, M, Fougeron, S, Genat, J F, Hermel, R, Lebbolo, H, Pham, T H, Savoy-Navarro, A, Sefri, R, Vilalte, s   +9 more
core   +1 more source

Benchmarking of Beyond-CMOS Exploratory Devices for Logic Integrated Circuits

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2015
A new benchmarking of beyond-CMOS exploratory devices for logic integrated circuits is presented. It includes new devices with ferroelectric, straintronic, and orbitronic computational state variables.
Dmitri E. Nikonov, Ian A. Young
doaj   +1 more source

A push–pull FVF LDO with full‐spectrum PSR and fast transient response

Electronics Letters
A push–pull low‐dropout regulator based on flipped voltage follower is proposed and designed in 65 nm CMOS, which has a push‐current mode and a pull‐current one.
Heng Zheng, Baixin Liu, Chen Wang, Xukun Wang, Bo Zhou   +4 more
doaj   +1 more source

Silicon-based distributed voltage-controlled oscillators [PDF]

, 2001
Distributed voltage-controlled oscillators (DVCOs) are presented as a new approach to the design of silicon VCOs at microwave frequencies. In this paper, the operation of distributed oscillators is analyzed and the general oscillation condition is ...
Hajimiri, Ali, Wu, Hui
core   +1 more source

Prospects of Electric Field Control in Perpendicular Magnetic Tunnel Junctions and Emerging 2D Spintronics for Ultralow Energy Memory and Logic Devices

Advanced Functional Materials, EarlyView.
Electric control of magnetic tunnel junctions offers a path to drastically reduce the energy requirements of the device. Electric field control of magnetization can be realized in a multitude of ways. These mechanisms can be integrated into existing spintronic devices to further reduce the operational energy.
Will Echtenkamp, Brahmdutta Dixit, Yifei Yang, Deyuan Lyu, Thomas Peterson, Qi Jia, Yu‐Chia Chen, Jian‐Ping Wang   +7 more
wiley   +1 more source

Key Technologies for THz Wireless Link by Silicon CMOS Integrated Circuits

Photonics, 2018
In terahertz-band communication using ultra-high frequencies, compound semiconductors with superior high-frequency performance have been used for research to date.
Minoru Fujishima
doaj   +1 more source

Guest editorial for the special issue on software-defined radio transceivers and circuits for 5G wireless communications [PDF]

, 2016
Yichuang Sun, Baoyong Chi, and Heng Zhang, Guest Editorial for the Special Issue on Software-Defined Radio Transceivers and Circuits for 5G Wireless Communications, published in IEEEE Transactions on Circuits and Systems II: Express Briefs, Vol.
Chi, Baoyong, Sun, Yichuang, Zhang, Heng
core   +2 more sources

Complex Cryptographic and User‐Centric Physically Unclonable Functions Enabled by Strain‐Sensitive Nanocrystals via Selective Ligand Exchange

Advanced Functional Materials, EarlyView.
This study investigates electromechanical PUFs that improve on traditional electric PUFs. The electron transport materials are coated randomly through selective ligand exchange. It produces multiple keys and a key with motion dependent on percolation and strain, and approaches almost ideal inter‐ and intra‐hamming distances.
Seungshin Lim, Hanseok Seo, Taesung Park, Byung Ku Jung, Junhyeok Park, Young Kyun Choi, Dae Yang Oh, Soong Ju Oh   +7 more
wiley   +1 more source

A Perspective on SOI Symmetric Lateral Bipolar Transistors for Ultra-Low-Power Systems

IEEE Journal of the Electron Devices Society, 2016
The reasons why state-of-the-art vertical bipolar circuits dissipate very high power are explained. The recent advent of SOI symmetric lateral bipolar transistors invites us to rethink bipolar as a high-speed but low-power technology.
Tak H. Ning
doaj   +1 more source