Results 151 to 160 of about 20,977 (202)
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2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2008
Silicon radio integration is currently limited by the ability to achieve high-Q filters on chip with the RF transistors. Furthermore, multi-terminal radio trends are driving the need for widely tunable filters. Progress on high-Q electrically-selectable CMOS-MEMS micromechanical filters and medium-Q widely tunable CMOS-MEMS LC filters is described ...
G. K. Fedder, T. Mukherjee
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Silicon radio integration is currently limited by the ability to achieve high-Q filters on chip with the RF transistors. Furthermore, multi-terminal radio trends are driving the need for widely tunable filters. Progress on high-Q electrically-selectable CMOS-MEMS micromechanical filters and medium-Q widely tunable CMOS-MEMS LC filters is described ...
G. K. Fedder, T. Mukherjee
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Microelectronics Reliability, 2000
Abstract Two case studies of packaging for sensor microsystems based on CMOS IC technology with post-CMOS micromachining and film deposition are presented. The first case includes a filter directly attached to the CMOS chip and a plastic ball grid array as first level packaging for CMOS integrated thermoelectric sensor arrays used for intrusion ...
Henry Baltes, Oliver Brand, Marc Waelti
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Abstract Two case studies of packaging for sensor microsystems based on CMOS IC technology with post-CMOS micromachining and film deposition are presented. The first case includes a filter directly attached to the CMOS chip and a plastic ball grid array as first level packaging for CMOS integrated thermoelectric sensor arrays used for intrusion ...
Henry Baltes, Oliver Brand, Marc Waelti
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CMOS and MEMS process investigation
Proceedings of the Thirteenth Biennial University/Government/Industry Microelectronics Symposium (Cat. No.99CH36301), 2003As MEMS technology matures as an industry, the integration of standard integrated circuit and MEMS devices will continue to increase. Presented is a brief overview of the work that others have done to solve these problems using hybrid, monolithic, or bonding techniques.
T. Whipple, G. Cibuzar
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2014 IEEE International Frequency Control Symposium (FCS), 2014
To greatly enhance the performance of our previously developed CMOS-MEMS resonant gate field effect transistor (RGFET) [1], a novel CMOS-MEMS RGFET array which combines a metal/oxide composite resonant-gate arrayed structure and a FET arrayed transducer has been proposed for the first time utilizing the TSMC 0.35 μm CMOS technology together with a ...
Chi-Hang Chin, Sheng-Shian Li
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To greatly enhance the performance of our previously developed CMOS-MEMS resonant gate field effect transistor (RGFET) [1], a novel CMOS-MEMS RGFET array which combines a metal/oxide composite resonant-gate arrayed structure and a FET arrayed transducer has been proposed for the first time utilizing the TSMC 0.35 μm CMOS technology together with a ...
Chi-Hang Chin, Sheng-Shian Li
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RF CMOS-MEMS cantilever resonator
2013 IEEE International Conference on Smart Instrumentation, Measurement and Applications (ICSIMA), 2013This paper presents use of the simple cantilever beam as RF CMOS-MEMS resonator, which can be scaled like transistor with improved performance. This resonator can be used in the oscillator and filter part of RF transceiver, which can actually be fabricated on chip without losing its Q-factor. The cantilever beam resonator was designed using COMSOL4.3b™
A. Anwar Zainuddin +5 more
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Ultra-wideband CMOS-MEMS radio
2009 IEEE International Conference on Ultra-Wideband, 2009Current ultrawideband (UWB) radios have several unsolved issues in front-end performance including difficult and expensive clock synthesizer designs, and power hungry baseband functions. In fact, the expected breakthrough of the very useful UWB technology has stalled since realized high bitrate integrated radios are much too expensive in the sense that
Esa Tiiliharju +4 more
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CMOS-compatible RF MEMS switch
SPIE Proceedings, 2004Mobile technologies have relied on RF switches for a long time. Though the basic function of the switch has remained the same, the way they have been made has changed in the recent past. In the past few years work has been done to use MEMS technologies in designing and fabricating an RF switch that would in many ways replace the electronic and ...
Narendra V. Lakamraju +2 more
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CMOS-MEMS atomic force microscope
2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, 2011We present a CMOS-MEMS atomic force microscope (AFM) with integrated 3-D MEMS actuation and 3-axis position sensing. CMOS driving and sensing electronics have been integrated in the same fabrication process. Our goal is to replace piezoelectric positioning systems which are bulky (leading to thermal drift and poor vibration immunity) and suffer from ...
N. Sarkar +3 more
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CMOS–MEMS Lateral Electrothermal Actuators
Journal of Microelectromechanical Systems, 2008In this paper, a type of lateral electrothermal (ET) actuator fabricated with post-CMOS micromachining is presented. The actuator is a beam with a multimorph structure, composed of CMOS dielectric and metal interconnect. Following structural release, the actuators demonstrate self-assembly under the moments arising from residual stress.
P.J. Gilgunn +3 more
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