Results 171 to 180 of about 6,180 (208)
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2007 IEEE International Symposium on Circuits and Systems (ISCAS), 2007
This paper describes the frequency mixing operation of a micro electro mechanical system device designed and fabricated in a CMOS commercial technology (AMS 0.35mum). The theory of the MEMS is summarized and a CMOS fully integrated MEMS is characterized as a mixer.
Joan Lluís Lopez +8 more
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This paper describes the frequency mixing operation of a micro electro mechanical system device designed and fabricated in a CMOS commercial technology (AMS 0.35mum). The theory of the MEMS is summarized and a CMOS fully integrated MEMS is characterized as a mixer.
Joan Lluís Lopez +8 more
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2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2008
Silicon radio integration is currently limited by the ability to achieve high-Q filters on chip with the RF transistors. Furthermore, multi-terminal radio trends are driving the need for widely tunable filters. Progress on high-Q electrically-selectable CMOS-MEMS micromechanical filters and medium-Q widely tunable CMOS-MEMS LC filters is described ...
G. K. Fedder, T. Mukherjee
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Silicon radio integration is currently limited by the ability to achieve high-Q filters on chip with the RF transistors. Furthermore, multi-terminal radio trends are driving the need for widely tunable filters. Progress on high-Q electrically-selectable CMOS-MEMS micromechanical filters and medium-Q widely tunable CMOS-MEMS LC filters is described ...
G. K. Fedder, T. Mukherjee
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Low-power MEMS-based CMOS Transceivers
2023 International Conference on IC Design and Technology (ICICDT), 2023An ISM 915-MHz FSK transceiver for low power internet-of-things (IoT) applications is presented in this paper. The system supports a shared antenna interface of FSK-matched filter for TRX and a matching network for the FSK RX. To consume less power, the transmitter employs an adaptive fast switching technique for FSK modulator, and uses a high-Q MEMS ...
Tang, Kai +5 more
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Microelectronics Reliability, 2000
Abstract Two case studies of packaging for sensor microsystems based on CMOS IC technology with post-CMOS micromachining and film deposition are presented. The first case includes a filter directly attached to the CMOS chip and a plastic ball grid array as first level packaging for CMOS integrated thermoelectric sensor arrays used for intrusion ...
Henry Baltes, Oliver Brand, Marc Waelti
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Abstract Two case studies of packaging for sensor microsystems based on CMOS IC technology with post-CMOS micromachining and film deposition are presented. The first case includes a filter directly attached to the CMOS chip and a plastic ball grid array as first level packaging for CMOS integrated thermoelectric sensor arrays used for intrusion ...
Henry Baltes, Oliver Brand, Marc Waelti
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A CMOS fuse for safe release of CMOS-MEMS devices
2017 IEEE SENSORS, 2017This paper reports a safe release mechanism for MEMS devices fabricated using plasma etching based dry processes. The proposed smart fuse is particularly designed for CMOS-MEMS devices where inherent CMOS thin films are used as structural materials. Properly designed polysilicon heater sandwiched between CMOS layers is the critical element of the fuse.
Peng Qu, Hongwei Qu
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Implementation of accelerometer in CMOS-MEMS
2010 5th International Microsystems Packaging Assembly and Circuits Technology Conference, 2010A fully-differential capacitive accelerometer is designed and implemented using TSMC 0.35μm 2P4M CMOS-MEMS process. The measured sensitivity is 53 mV/g.
Tsung-Chi Kuo +2 more
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Proceedings of the 2006 IEEE/ACM international conference on Computer-aided design - ICCAD '06, 2006
CMOS-MEMS integration can improve the performance of the MEMS (micro-electromechanical systems), allows for smaller packages and leads to a lower packaging and instrumentation cost. As argued in this article, processing MEMS above CMOS is the most promising approach for CMOS-MEMS integration, but it limits the thermal budget for MEMS processing.
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CMOS-MEMS integration can improve the performance of the MEMS (micro-electromechanical systems), allows for smaller packages and leads to a lower packaging and instrumentation cost. As argued in this article, processing MEMS above CMOS is the most promising approach for CMOS-MEMS integration, but it limits the thermal budget for MEMS processing.
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2014 IEEE International Frequency Control Symposium (FCS), 2014
To greatly enhance the performance of our previously developed CMOS-MEMS resonant gate field effect transistor (RGFET) [1], a novel CMOS-MEMS RGFET array which combines a metal/oxide composite resonant-gate arrayed structure and a FET arrayed transducer has been proposed for the first time utilizing the TSMC 0.35 μm CMOS technology together with a ...
Chi-Hang Chin, Sheng-Shian Li
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To greatly enhance the performance of our previously developed CMOS-MEMS resonant gate field effect transistor (RGFET) [1], a novel CMOS-MEMS RGFET array which combines a metal/oxide composite resonant-gate arrayed structure and a FET arrayed transducer has been proposed for the first time utilizing the TSMC 0.35 μm CMOS technology together with a ...
Chi-Hang Chin, Sheng-Shian Li
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