Results 251 to 260 of about 7,631,832 (303)
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1998
In this chapter, SOI CMOS technology is described. Starting from the evolution of SOI technology, various SOI substrate and isolation techniques are introduced. Then, a 0.25μm SOI CMOS fabrication processing sequence is described, followed by major SOI CMOS device structures.
James B. Kuo, Ker-Wei Su
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In this chapter, SOI CMOS technology is described. Starting from the evolution of SOI technology, various SOI substrate and isolation techniques are introduced. Then, a 0.25μm SOI CMOS fabrication processing sequence is described, followed by major SOI CMOS device structures.
James B. Kuo, Ker-Wei Su
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1983 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, 1983
Unlike NMOS technology, which has been relatively standardized by the industry, CMOS technology is currently much more varied in its methods of production. Presently, the following alternatives (and related issues) exist: bulk CMOS versus CMOS-SOS (cost, yield, performance), P-well versus N-well architecture (performance, latch-up, immunity, alpha ...
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Unlike NMOS technology, which has been relatively standardized by the industry, CMOS technology is currently much more varied in its methods of production. Presently, the following alternatives (and related issues) exist: bulk CMOS versus CMOS-SOS (cost, yield, performance), P-well versus N-well architecture (performance, latch-up, immunity, alpha ...
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A 12-b 10-GS/s Interleaved Pipeline ADC in 28-nm CMOS Technology
IEEE Journal of Solid-State Circuits, 2017S. Devarajan +18 more
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Double-Node-Upset-Resilient Latch Design for Nanoscale CMOS Technology
IEEE Transactions on Very Large Scale Integration (vlsi) Systems, 2017Aibin Yan +5 more
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Beyond CMOS - benchmarking for future technologies
2012 Design, Automation & Test in Europe Conference & Exhibition (DATE), 2012Sotomayor Torres, C.M. +5 more
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Integrated Silicon Directly Modulated Light Source Using p-Well in Standard CMOS Technology
IEEE Sensors Journal, 2016Kaikai Xu
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2010
Performance capability of circuits depends to a great extent on the available semiconductor technology. Numerous parameters related to device, metallization or substrate properties circumscribe the achievable circuit characteristics at microwave frequencies and thus can be used for technology comparison.
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Performance capability of circuits depends to a great extent on the available semiconductor technology. Numerous parameters related to device, metallization or substrate properties circumscribe the achievable circuit characteristics at microwave frequencies and thus can be used for technology comparison.
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An Experimental Demonstration of GaN CMOS Technology
IEEE Electron Device Letters, 2016R. Chu +4 more
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CMOS‐Technology‐Enabled Flexible and Stretchable Electronics for Internet of Everything Applications
Advances in Materials, 2016A. Hussain, M. Hussain
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