Results 161 to 170 of about 4,444 (239)
High-Performance Carbon Nanotube Electronic Devices: Progress and Challenges. [PDF]
Zhang Z, Zhang N, Zhang Z.
europepmc +1 more source
Design and simulation of a low-energy atomic silicon quantum-dot circuit with potential in internet of things applications. [PDF]
Rasmi H +4 more
europepmc +1 more source
Nanotechnology-Based Modern Biosensors for the Detection of SARS-CoV-2 Virus. [PDF]
Devi S, Yadav N, Yadav R.
europepmc +1 more source
CNTFET Based Energy Efficient Full Adder
openaire +1 more source
Modified vedic multiplier architecture using Nikhilam and Karatsuba algorithms with hybrid adders for enhanced performance. [PDF]
A S, A S.
europepmc +1 more source
Room Temperature Ionic Liquid-Gated Carbon Nanotube FETs for Stable Hydrogen Sensing at Elevated Temperatures. [PDF]
Liu Y +5 more
europepmc +1 more source
Some of the next articles are maybe not open access.
Related searches:
Related searches:
Journal of Computational Electronics, 2007
Based on the non-equilibrium Green’s function formalism we numerically studied gate-controlled tunneling carbon nanotube field-effect transistors. The effect of doping concentration on the performance of the device has been investigated. We show that an asymmetric doping profile can improve the Ion/Ioff ratio of the device improves.
Mahdi Pourfath +2 more
openaire +1 more source
Based on the non-equilibrium Green’s function formalism we numerically studied gate-controlled tunneling carbon nanotube field-effect transistors. The effect of doping concentration on the performance of the device has been investigated. We show that an asymmetric doping profile can improve the Ion/Ioff ratio of the device improves.
Mahdi Pourfath +2 more
openaire +1 more source
2020
In recent years, carbon nanotube (CNT) emerged as one of the promising materials that shows various advantages over silicon material (e.g., aggressive channel length scaling due to absence of mobility degradation, variable bandgap with single material, ultra-thin body device that is possible due to smaller diameter [1-3nm], and compatibility of CNT ...
Amandeep Singh +2 more
openaire +1 more source
In recent years, carbon nanotube (CNT) emerged as one of the promising materials that shows various advantages over silicon material (e.g., aggressive channel length scaling due to absence of mobility degradation, variable bandgap with single material, ultra-thin body device that is possible due to smaller diameter [1-3nm], and compatibility of CNT ...
Amandeep Singh +2 more
openaire +1 more source
High-Performance and Robust Spintronic/CNTFET-Based Binarized Neural Network Hardware Accelerator
IEEE Transactions on Emerging Topics in Computing, 2023The convolutional neural network (CNN) is a significant part of the artificial intelligence (AI) systems widely used in different tasks. The binarized neural networks (BNNs) reduce power consumption and hardware overhead to answer the demands for using ...
Milad Tanavardi Nasab +3 more
semanticscholar +1 more source
CNTFET based radiation hardened latch
Australian Journal of Electrical and Electronics Engineering, 2021In this paper, a carbon nanotube field effect transistor (CNTFET) based single event upset (SEU) tolerant latch is proposed.
Shazia Shakeel, Naushad Alam
openaire +1 more source

