Results 161 to 170 of about 2,007 (192)
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CNTFET-RFB: An Error Correction Implementation for Multi-valued CNTFET Logic
2016 IEEE 46th International Symposium on Multiple-Valued Logic (ISMVL), 2016This paper presents a solution for fault-tolerance in logic circuits comprised of Carbon Nanotube FETs (CNTFETs). This work builds on a recently proposed method for errorcorrection called Restorative Feedback (RFB). The RFB method is a variant of Triple-Modular Redundancy (TMR) that utilizes the fault masking capabilities of the Muller C element to ...
Gopalakrishnan Sundararajan +1 more
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IEEE Electron Device Letters, 2013
We present a Nyquist stability criterion, together with step time responses, for the small-signal equivalent circuit model of common-source-configured carbon-nanotube (CNT) field-effect transistors (CNTFETs) made of 100 CNTs at 10-nm pitch as well as single CNTs, for the first time.
Saeed Haji-Nasiri +1 more
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We present a Nyquist stability criterion, together with step time responses, for the small-signal equivalent circuit model of common-source-configured carbon-nanotube (CNT) field-effect transistors (CNTFETs) made of 100 CNTs at 10-nm pitch as well as single CNTs, for the first time.
Saeed Haji-Nasiri +1 more
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International Conference on Design and Test of Integrated Systems in Nanoscale Technology, 2006. DTIS 2006., 2006
This paper provides an overview of current types of CNTFETs and of some compact models. Using the available models, the influence of the parameters on the device characteristics was simulated and analyzed. The conclusion is that the tube diameter influences not only the current level, but also the threshold voltage of the CNTFET, while the contact ...
T. Dang, L. Anghel, R. Leveugle
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This paper provides an overview of current types of CNTFETs and of some compact models. Using the available models, the influence of the parameters on the device characteristics was simulated and analyzed. The conclusion is that the tube diameter influences not only the current level, but also the threshold voltage of the CNTFET, while the contact ...
T. Dang, L. Anghel, R. Leveugle
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Effect of CNTFET Parameters on Novel High Stable and Low Power: 8T CNTFET SRAM Cell
Transactions on Electrical and Electronic Materials, 2021In this paper, we have investigated the stability and power consumption of an 8 transistor (8 T) carbon nanotube field-effect transistor (CNTFET) based static random-access memory (SRAM) cell. The power and noise performances of the proposed 8 T CNTFET SRAM cell are observed for write, hold and read operations. The power consumption and noise margin of
M. Elangovan, K. Gunavathi
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Performance study of 12-CNTFET and GDI CNTFET based full adder in HSPICE
2014 International Conference on Advances in Engineering & Technology Research (ICAETR - 2014), 2014This manuscript reports and analyzes 12-CNTFET and GDI CNTFET based full adder implementation at 32 nm level. As figures of merit, stability, power dissipation and Power Delay Product (PDP) are considered for the best overall performance. Intensive HSPICE simulations have been performed to investigate the distribution of the power and delay of the ...
null Habib Muhammad Nazir Ahmad +4 more
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Ternary SRAM circuit designs with CNTFETs
International Journal of Circuit Theory and Applications, 2023SummaryStatic random‐access memory (SRAM) is a cornerstone in modern microprocessors architecture, as it has high power consumption, large area, and high complexity. Also, the stability of the data in the SRAM against the noise and the performance under the radian exposure are main concern issues.
Abdelrahman, Doaa +4 more
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CNTFET-based logic circuit design
International Conference on Design and Test of Integrated Systems in Nanoscale Technology, 2006. DTIS 2006., 2006This paper gives an overview of some potential uses of carbon nanotube field effect transistors (CNTFETs) in logic circuit design. The realization of existing logic functions with resistive-load and complementary logic is described, with some examples of how a logic function can be coded by selective doping of a single nanotube molecule.
I. O'Connor, J. Liu, F. Gaffiot
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New nanotechnology structures CNTFET GaAs
2019 8th International Conference on Renewable Energy Research and Applications (ICRERA), 2019The nanotechnology market has reached several hundred billion USD. This market is mainly due to the physical characteristics of the CNTs ((Nano Tube Carbon). The conductivity of CNT is up 80 times higher than the copper and the mobility charge of electrons and holes values is greater than 100.103 cm2/Vs compared to 1,5103 cm2/Vs for amorphous silicon ...
M.S. Benbouza +3 more
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Low leakage CNTFET full adders
2015 Global Conference on Communication Technologies (GCCT), 2015As the technology scales down to 32nm or below, the leakage power starts dominating the total power. Reduction of this leakage problem is the major problem, today's CMOS technology is facing. Hence researchers are looking for alternate technologies. The Carbon Nanotubes FET (CNTFET) is found to be a most promising device that becomes alternative or ...
Rajendra Prasad Somineni +2 more
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A Compact Noise Model for C-CNTFETs
ECS Journal of Solid State Science and Technology, 2017In this paper we present a compact noise model for C-CNTFETs implemented in Verilog-A. After a brief description of the main noise sources existing in CNTFETs, which constitute a significant limitation in the design of analogue and logic CNTFETs circuits, we enhance a model, already proposed by us, considering the noise sources.
Marani R, Gelao G, Perri AG
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