Results 71 to 80 of about 4,444 (239)
Engineering Reports, Volume 6, Issue 11, November 2024.A non‐volatile associative memory leveraging spintronic synapses, employing magnetic tunnel junctions in conjunction with neurons constructed using carbon nanotube field‐effect transistors, is introduced. Our novel associative memory system represents a significant breakthrough in emerging technologies, harnessing the unique strengths of spintronic ...
Mahan Rezaei +3 more
wiley +1 more source
Design of ternary full-adder and full-subtractor using pseudo NCNTFETs
e-Prime: Advances in Electrical Engineering, Electronics and Energy, 2023 Now-a-days, the binary logic system has intensified by scaling the field effect transistor (FET). However, due to the effectiveness of scaling the FET, ternary logics became more popular.
SV RatanKumar +2 more
doaj +1 more source
The Effects of Substrate Phonon Mode Scattering on Transport in Carbon Nanotubes [PDF]
, 2008 Carbon nanotubes (CNTs) have large intrinsic carrier mobility due to weak acoustic phonon scattering. However, unlike two-dimensional metal-oxide-semiconductor field effect transistors (MOSFETs), substrate surface polar phonon (SPP) scattering has a ...
Avouris, Phaedon +3 more
core +1 more source
Study of CNTFETs as Memory Devices
ECS Journal of Solid State Science and Technology, 2022 In this paper we propose a procedure for the study of CNTFETs as memory devices. In particular we analyze the design of a 6-T SRAM, in order to evaluate the writing and reading times, in single and double supplies, the static noise margin, the static power consumption and the power-delay product. For these goals, we use a CNTFET model, already proposed
R. Marani, A. G. Perri
openaire +1 more source
Low-power and robust ternary SRAM cell with improved noise margin in CNTFET technology
Physica ScriptaIn this paper, a carbon nanotube field-effect transistor (CNTFET) based low power and robust ternary SRAM (TSRAM) cell with enhanced static noise margin (SNM) has been proposed.
S. Haq +3 more
semanticscholar +1 more source
CNTFET Based Fully Differential First Order All Pass Filter
Computer systems science and engineering, 2023 A novel, carbon nanotube field effect transistor (CNTFET) based fully differential first order all pass filter (FDFAPF) circuit configuration is presented.
M. I. Masud, Iqbal A. Khan
semanticscholar +1 more source
Micro &Nano Letters, Volume 19, Issue 6, November 2024.This paper thoroughly investigates the performance of graphene nanoribbon field‐effect transistors and conventional MOSFETs, mainly focusing on onedimensional armchair graphene nanoribbons. Results indicate significant enhancements in graphene nanoribbon field‐effect transistors‐based triple cascode operational transconductance amplifiers, including ...
Faraz Hashmi +4 more
wiley +1 more source
CNFET-based design ternary logic design and arithmetic circuit simulation using HSPICE [PDF]
, 2015 This project report focuses on the multiple-value logic (MVL) or commonly known as ternary logic gates by using carbon nanotube (CNT) FETs devices (CNTFETs).
Ee, Poey Guan
core
Advanced Intelligent Systems, Volume 6, Issue 6, June 2024.Fully depleted silicon‐on‐insulator (FDSOI) field‐effect transistor (FET) is demonstrated as for artificial synapse, where FDSOI substrate mitigates leakage current and low power when compared to bulk Si. To validate stable hardware interactions, 5 × 6 synapse arrays using these verified FDSOI FETs are interconnected to 10 × 10 LIF neuron arrays.
Yu‐Rim Jeon +3 more
wiley +1 more source
Materials Research Express, 2020 The device dimensions have been consistently scaling down since many developing technologies need smaller and faster integrated circuits for advancement and improvement in both performance and device density.
Bhoop Singh, Prasad B, Dinesh Kumar
doaj +1 more source