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Compact Modeling of Two-Dimensional Field-Effect Biosensors [PDF]
Sensors, 2023 A compact model able to predict the electrical read-out of field-effect biosensors based on two-dimensional (2D) semiconductors is introduced. It comprises the analytical description of the electrostatics including the charge density in the 2D ...
Francisco Pasadas +8 more
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Effect of Statistical Dopant Fluctuations on Threshold Voltage of Emerging Devices
IEEE Journal of the Electron Devices Society, 2021 This paper presents a comparative study on the effect of statistical dopant fluctuations on threshold voltage ( $V_{th}$ ) of emerging and conventional metal-oxide-semiconductor (MOS) field-effect (FET) transistors (MOSFETs). In this context, three ${n}$
Samar K. Saha
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Micromachines, 2022 This paper introduces a compact SPICE model of a two-terminal memory with a Pd/Ti/IGZO/p+-Si structure. In this paper, short- and long-term components are systematically separated and applied in each model.
Donguk Kim +9 more
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Analysis of Logic-in-Memory Full Adder Circuit With Floating Gate Field Effect Transistor (FGFET)
IEEE Access, 2023 The high data throughput and high energy efficiency required recently are increasingly difficult to implement due to the von Neumann bottleneck. As a way to overcome this, Logic-in-Memory (LiM) technology has recently been receiving a lot of attention ...
Sueyeon Kim +6 more
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Heterostructure Ge-Body pTFETs for Analog/RF Applications
IEEE Journal of the Electron Devices Society, 2020 This article presents a systematic study on the analog and radio-frequency (RF) performance of type-II staggered heterostructure p-channel tunnel field-effect transistors (pTFETs) with Ge (Germanium) channel and different compound semiconductor source ...
Sayani Ghosh +3 more
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Research and Development of Parameter Extraction Approaches for Memristor Models
Micromachines, 2021 Memristors are among the most promising devices for building neural processors and non-volatile memory. One circuit design stage involves modeling, which includes the option of memristor models.
Dmitry Alexeevich Zhevnenko +5 more
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Micromachines, 2021 The use of low-dimensional materials is a promising approach to improve the key characteristics of memristors. The development process includes modeling, but the question of the most common compact model applicability to the modeling of device ...
Fedor Pavlovich Meshchaninov +5 more
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Memristor Degradation Analysis Using Auxiliary Volt-Ampere Characteristics
Micromachines, 2022 The memristor is one of the modern microelectronics key devices. Due to the nanometer scale and complex processes physic, the development of memristor state study approaches faces limitations of classical methods to observe the processes.
Georgy Teplov +8 more
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Compact Modeling of Multi-Layered MoS2 FETs Including Negative Capacitance Effect
IEEE Journal of the Electron Devices Society, 2020 In this article, we present a channel thickness dependent analytical model for MoS2 symmetric double-gate FETs including negative capacitance (NC) effect.
Keshari Nandan +8 more
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Modeling and detecting resonant tides of exotic compact objects
, 2021 The event horizon of a black hole in general relativity absorbs all infalling radiation. Any observation of the contrary would immediately challenge the expectation that astrophysical black holes are described by the vacuum Kerr geometry.
Fransen, Kwinten +3 more
core +2 more sources