Results 11 to 20 of about 499,080 (293)
Analysis of Circuit Simulation Considering Total Ionizing Dose Effects on FinFET and Nanowire FET
Applied Sciences, 2021 In this study, we analyzed the total ionizing dose (TID) effect characteristics of p-type FinFET and Nanowire FET (NW-FET) according to the structural aspect through comparison of the two devices.
Hyeonjae Won, Myounggon Kang
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IEEE Open Journal of Power Electronics, 2021 This work presents a physics-based compact GaN device model that can predict the performance characteristics of a wide range of GaN devices for power electronics applications.
Ramchandra M. Kotecha +5 more
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Modeling The Time Variability of Accreting Compact Sources [PDF]
, 1999 We present model light curves for accreting Black Hole Candidates (BHC) based on a recently proposed model for their spectro-temporal properties. According to this model, the observed light curves and aperiodic variability of BHC are due to a series of ...
Abramowicz M. A. +5 more
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Reliability-Aware SPICE Compatible Compact Modeling of IGZO Inverters on a Flexible Substrate
Applied Sciences, 2021 Accurate circuit simulation reflecting physical and electrical stress is of importance in indium gallium zinc oxide (IGZO)-based flexible electronics.
Je-Hyuk Kim +9 more
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Advanced compact modeling of the deep submicron technologies
Journal of Telecommunications and Information Technology, 2000 The technology of CMOS large-scale integrated circuits (LSI`s) achieved remarkable advances over last 25 year and the progress is expected to continue well into the next century.
Władysław Grabiński +3 more
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Deep Submicron EGFET Based on Transistor Association Technique for Chemical Sensing
Sensors, 2019 Extended-gate field-effect transistor (EGFET) is an electronic interface originally developed as a substitute for an ion-sensitive field-effect transistor (ISFET). Although the literature shows that commercial off-the-shelf components are widely used for
Salvatore A. Pullano +6 more
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Physics-Based DC Compact Modeling of Schottky Barrier and Reconfigurable Field-Effect Transistors
IEEE Journal of the Electron Devices Society, 2022 A closed-form and physics-based compact model is presented for calculating the DC characteristics of Schottky barrier field-effect transistors and dual gated reconfigurable field-effect transistors. The given model calculates the charge-carrier injection
Christian Roemer +8 more
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Advances in Compact Modeling of Organic Field-Effect Transistors
IEEE Journal of the Electron Devices Society, 2020 In this review, recent advances in compact modeling of organic field-effect transistors (OFETs) are presented. Despite the inherent strength for printed flexible electronics and the extremely aggressive research conducted over more than three decades ...
Sungyeop Jung +5 more
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Using Self-Heating Resistors as a Case Study for Memristor Compact Modeling
IEEE Journal of the Electron Devices Society, 2022 Memristors were first proposed in 1971 by Leon Chua. These devices are usually regarded as being one of the newest fundamental breakthrough for electronics. Their role in designing new electronic systems is expected to be an important, key-factor.
Rodrigo Picos +4 more
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Twisted massive non-compact models [PDF]
Journal of High Energy Physics, 2018 Abstract We study interacting massive N = (2, 2) supersymmetric field theories in two dimensions which arise from deforming conformal field theories with a continuous spectrum. Firstly, we deform N = 2 superconformal Liouville theory with relevant operators, and twist the theory into a topological quantum field theory.
Li, Songyuan, Troost, Jan
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