Results 191 to 200 of about 17,122 (236)

Tunable and nonlinearity-enhanced dispersive-plus-dissipative coupling in photon-pressure circuits. [PDF]

open access: yesNat Commun
Kazouini M   +7 more
europepmc   +1 more source

Integration of Er<sup>3+</sup> Emitters in Silicon-on-Insulator Nanodisk Metasurface. [PDF]

open access: yesNanomaterials (Basel)
Bader J   +6 more
europepmc   +1 more source

Cryo-SEM Reveals Native Architecture and Matrix Complexity in P. aeruginosa Biofilms

open access: yes
Osondu-Chuka GO   +5 more
europepmc   +1 more source

Cryogenic etching of deep narrow trenches in silicon

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 2000
Deep and narrow anisotropic etching of silicon structures has been investigated in a low-pressure high density plasma reactor working with a cryogenic chuck. We have previously demonstrated the feasibility of this technique on such structures. Improvement of etch rate and profiles has been studied and new results show 2 μm wide trenches etched to a ...
S. Aachboun   +3 more
exaly   +2 more sources

Numerical study of aperture shape effects in deep cryogenic etching of silicon

International Conference on Micro- and Nano-Electronics 2021, 2022
Cryogenic etching of silicon in SF6/O2 plasma is the process of choice for fabrication of deep high aspect ratio structures with strict requirements for the sidewall angle, surface roughness and contamination, including MEMS, X-ray optics, and supercapacitors.
Andrew V Miakonkikh, Vladimir F Lukichev
exaly   +2 more sources

HARDWARE DESIGN FOR CRYOGENIC ETCHING EQUIPMENT

Heat Transfer Research, 2021
Sang Jeen Hong
exaly   +2 more sources

Cryogenic etching and characterization of nano-sized silicon metadevice

Optics Communications, 2023
Jindong Wang   +6 more
exaly   +2 more sources

Numerical Simulation of Cryogenic Etching: Model with Delayed Desorption

Russian Microelectronics, 2021
A numerical model of the evolution of the trench profile during cryogenic etching in SF6/O2 plasma based on the cellular representation of the surface state, the Monte Carlo method for calculating particle fluxes, and the scheme of delayed desorption of reaction products is proposed.
M. K. Rudenko   +2 more
openaire   +1 more source

ICP cryogenic dry etching for shallow and deep etching in silicon

SPIE Proceedings, 2009
We achieved to etch nano- and deep structures in silicon using ICP-cryogenic dry etching process. We etched nanopores and nanocantilevers with an etch rate of 13 nm/min, nanopillars with an etch rate of 2.8 μm/min - 4.0 μm/min, membrane and cantilever structures with an etch rate of 4 μm/min and 3 μm/min, respectively.
Ü. Sökmen   +6 more
openaire   +1 more source

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