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Tunable and nonlinearity-enhanced dispersive-plus-dissipative coupling in photon-pressure circuits. [PDF]
Kazouini M +7 more
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Integration of Er<sup>3+</sup> Emitters in Silicon-on-Insulator Nanodisk Metasurface. [PDF]
Bader J +6 more
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Cryo-SEM Reveals Native Architecture and Matrix Complexity in P. aeruginosa Biofilms
Osondu-Chuka GO +5 more
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Cryogenic etching of deep narrow trenches in silicon
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 2000Deep and narrow anisotropic etching of silicon structures has been investigated in a low-pressure high density plasma reactor working with a cryogenic chuck. We have previously demonstrated the feasibility of this technique on such structures. Improvement of etch rate and profiles has been studied and new results show 2 μm wide trenches etched to a ...
S. Aachboun +3 more
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Numerical study of aperture shape effects in deep cryogenic etching of silicon
International Conference on Micro- and Nano-Electronics 2021, 2022Cryogenic etching of silicon in SF6/O2 plasma is the process of choice for fabrication of deep high aspect ratio structures with strict requirements for the sidewall angle, surface roughness and contamination, including MEMS, X-ray optics, and supercapacitors.
Andrew V Miakonkikh, Vladimir F Lukichev
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HARDWARE DESIGN FOR CRYOGENIC ETCHING EQUIPMENT
Heat Transfer Research, 2021Sang Jeen Hong
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Cryogenic etching and characterization of nano-sized silicon metadevice
Optics Communications, 2023Jindong Wang +6 more
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Numerical Simulation of Cryogenic Etching: Model with Delayed Desorption
Russian Microelectronics, 2021A numerical model of the evolution of the trench profile during cryogenic etching in SF6/O2 plasma based on the cellular representation of the surface state, the Monte Carlo method for calculating particle fluxes, and the scheme of delayed desorption of reaction products is proposed.
M. K. Rudenko +2 more
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ICP cryogenic dry etching for shallow and deep etching in silicon
SPIE Proceedings, 2009We achieved to etch nano- and deep structures in silicon using ICP-cryogenic dry etching process. We etched nanopores and nanocantilevers with an etch rate of 13 nm/min, nanopillars with an etch rate of 2.8 μm/min - 4.0 μm/min, membrane and cantilever structures with an etch rate of 4 μm/min and 3 μm/min, respectively.
Ü. Sökmen +6 more
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