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The role of physisorption in the cryogenic etching process of silicon
Japanese Journal of Applied Physics, 2019Abstract The growth mechanism of the passivation layer in the cryogenic process used for silicon deep etching is explored experimentally in an inductively coupled plasma reactor. In particular, the role of SiF 4 etching by-products on the SiO
G. Antoun +10 more
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Super-selective cryogenic etching for sub-10 nm features
Nanotechnology, 2012Plasma etching is a powerful technique for transferring high-resolution lithographic masks into functional materials. Significant challenges arise with shrinking feature sizes, such as etching with thin masks. Traditionally this has been addressed with hard masks and consequently additional costly steps.
Zuwei, Liu +3 more
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Anisotropic Etching of a Novalak‐Based Polymer at Cryogenic Temperature
Journal of The Electrochemical Society, 1997A radio-frequency induction plasma etcher with cryogenic capabilities has been used to achieve anisotropic etching of a novolak photosensitive polymer with pure oxygen. At -100°C wafer chuck temperature, etching profiles and etching residues were observed at various power and pressure conditions.
R. Hsiao +6 more
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Chemically Etched Cryogenic Micro Structure Heat Exchanger
Heat Transfer: Volume 2, 2005A tandem 4 K pulse tube refrigerator requires a recuperator to be fully accomplished. The recuperator should be a counter-flow heat exchanger which has micro heat-transfer structure like a regenerator of cryogenic refrigerators. However, the technology of such a heat exchanger is not well established yet.
Jeheon Jung, Sangkwon Jeong
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Cryogenic dry etching for high aspect ratio microstructures
[1993] Proceedings IEEE Micro Electro Mechanical Systems, 2002Cryogenic reactive ion etching (RIE) has been used to fabricate microstructures. The cryogenic system has a cathode stage that is temperature controlled from 0 to -140 degrees C. A magnetic field and a narrow gap between electrodes are introduced to increase plasma density.
K. Murakami +3 more
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Mix-and-match lithography and cryogenic etching for NIL template fabrication
Microelectronic Engineering, 2020Abstract Field Emission Scanning Probe Lithography (FE-SPL) is an enabling technology for prototyping of sub-10 nm high-performance electronic devices. However, due to the serial writing scheme this technology is rather slow. The purpose of this work is the demonstration of a mix-and-match process in combination with cryogenic etching in order to ...
Martin Hofmann +8 more
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Electron cyclotron resonance plasma reactor for cryogenic etching
Review of Scientific Instruments, 1993Electron cyclotron resonance (ECR) plasma reactors are being used for ultralarge scale integrated circuit fabrication to meet the stringent requirements on submicron feature etching. Three issues are critical for ECR reactor design: plasma uniformity, ion energy control, and wafer temperature control.
Eray S. Aydil +2 more
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Prediction of new etch fronts in black silicon produced by cryogenic deep reactive ion etching
2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS), 2015This paper presents an explanation of the dynamic formation of black silicon (BSi) during deep reactive ion etching (DRIE) processes which has been confirmed by both experimental data with cryogenic DRIE and computational modeling. The model described the strong dependence of the substrate topography on the etching parameters and its evolution with ...
D. Abi-Saab +4 more
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Shallow and deep dry etching of silicon using ICP cryogenic reactive ion etching process
Microsystem Technologies, 2010We achieved to etch nanostructures as well as structures with high aspect ratios in silicon using an inductively coupled plasma cryogenic deep reactive ion etching process. We etched cantilevers, submicron diameter pillars, membranes and deep structures in silicon with etch rates between 13 nm/min and 4 μm/min.
Ü. Sökmen +7 more
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Damage free cryogenic etching of ultra low-k materials
2013 IEEE International Interconnect Technology Conference - IITC, 2013Cryogenic etching was applied to porous organosilicate (OSG) films. Plasma-induced damage was reduced due to the protective effect of etch by-products condensed in pores of low-k materials. Almost no carbon depletion was observed when the wafer temperature is below a certain critical level. Most of experiments were carried out with SF6 plasma.
Mikhail R. Baklanov +3 more
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