Results 211 to 220 of about 17,122 (236)

Electron cyclotron resonance plasma reactor for cryogenic etching

Review of Scientific Instruments, 1993
Electron cyclotron resonance (ECR) plasma reactors are being used for ultralarge scale integrated circuit fabrication to meet the stringent requirements on submicron feature etching. Three issues are critical for ECR reactor design: plasma uniformity, ion energy control, and wafer temperature control.
Eray S. Aydil, Jeffrey A. Gregus, Richard A. Gottscho   +2 more
openaire   +1 more source

Prediction of new etch fronts in black silicon produced by cryogenic deep reactive ion etching

2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS), 2015
This paper presents an explanation of the dynamic formation of black silicon (BSi) during deep reactive ion etching (DRIE) processes which has been confirmed by both experimental data with cryogenic DRIE and computational modeling. The model described the strong dependence of the substrate topography on the etching parameters and its evolution with ...
D. Abi-Saab, P. Basset, M. J. Pierotti, M. L. Trawick, D. E. Angelescu   +4 more
openaire   +1 more source

Shallow and deep dry etching of silicon using ICP cryogenic reactive ion etching process

Microsystem Technologies, 2010
We achieved to etch nanostructures as well as structures with high aspect ratios in silicon using an inductively coupled plasma cryogenic deep reactive ion etching process. We etched cantilevers, submicron diameter pillars, membranes and deep structures in silicon with etch rates between 13 nm/min and 4 μm/min.
Ü. Sökmen, A. Stranz, S. Fündling, S. Merzsch, R. Neumann, H.-H. Wehmann, E. Peiner, A. Waag   +7 more
openaire   +1 more source

Damage free cryogenic etching of ultra low-k materials

2013 IEEE International Interconnect Technology Conference - IITC, 2013
Cryogenic etching was applied to porous organosilicate (OSG) films. Plasma-induced damage was reduced due to the protective effect of etch by-products condensed in pores of low-k materials. Almost no carbon depletion was observed when the wafer temperature is below a certain critical level. Most of experiments were carried out with SF6 plasma.
Mikhail R. Baklanov, Liping Zhang, Remi Dussart, Jean-Francois de Marneffe   +3 more
openaire   +1 more source

Electron cyclotron resonance plasma etching of photoresist at cryogenic temperatures

Journal of Applied Physics, 1992
An electron cyclotron resonance oxygen plasma discharge was used to anisotropically etch photoresist at a low substrate temperature (−100 °C). The results of using a lower temperature are seen in a reduction in lateral etch rate, with concomitant improvement in anisotropy.
Walter Varhue, Jeffrey Burroughs, Walter Mlynko   +2 more
openaire   +1 more source

Cryogenic etching of nano-scale silicon trenches with resist masks

Microelectronic Engineering, 2011
Cryogenic silicon etching using SF"6-O"2 at the sub-50 nm scale has been developed for nano-electromechanical systems (NEMS) and nano-photonics systems where high aspect ratio trenches are desired. It was found that the SF"6-O"2 chemistry at cryogenic temperatures (-100 to -130^oC) provides the best combination of etch rate, selectivity, and profile ...
Y. Wu, D.L. Olynick, A. Goodyear, C. Peroz, S. Dhuey, X. Liang, S. Cabrini   +6 more
openaire   +1 more source

Cryogenic etching of porous low-k dielectrics in CF3Br and CF4 plasmas

Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 2017
Low temperature etching of organosilicate low-k dielectrics in CF3Br and CF4 plasmas is studied. The chemical composition of pristine and etched low-k films was measured by Fourier transform infrared spectroscopy. Reduction of plasma-induced damage at low process temperature is observed.
Askar Rezvanov, Andrey V. Miakonkikh, Alexey S. Vishnevskiy, Konstantin V. Rudenko, Mikhail R. Baklanov   +4 more
openaire   +1 more source

Nanofabrication by field-emission scanning probe lithography and cryogenic plasma etching

Microelectronic Engineering, 2018
Building low-power and high-density circuits requires new devices, which can be based for example on single electron effects. Single electron transistors (SET), which can operate at room temperature (RT), are candidates with high potential for the post-CMOS era. However, their fabrication relies typically on a statistical fabrication of quantum dots or
Claudia Lenk, Martin Hofmann, Steve Lenk, Marcus Kaestner, Tzvetan Ivanov, Yana Krivoshapkina, Diana Nechepurenko, Burkhard Volland, Mathias Holz, Ahmad Ahmad, Alexander Reum, Chen Wang, Mervyn Jones, Zahid Durrani, Ivo W. Rangelow   +14 more
openaire   +1 more source

Cryogenic etching of positively tapered silicon pillars with controllable profiles

Journal of Vacuum Science & Technology B
Fabrication of high aspect ratio silicon nanopillars is challenging for various applications. A cryogenic silicon etching process using SF6 and O2 plasma is investigated to create silicon nanopillars with 10 μm height and tens of nanometers apex. In the process, fluorine radicals react with silicon atoms, releasing volatile SiFx byproducts and then ...
Xiaoli Zhu, Aixi Pan, Babak Shokouhi, Bo Cui   +3 more
openaire   +1 more source

Temperature influence on etching deep holes with SF6/O2 cryogenic plasma

Journal of Micromechanics and Microengineering, 2002
A cryogenic SF6/O2 plasma process has been used to investigate the etching of deep holes in silicon wafers. The influence of crystallographic and aspect ratio dependence of the etch rate on the holes profile have been explored. It was found that wafer temperature, during the etching process, played a crucial role in controlling the anisotropy and ...
G Craciun, M A Blauw, E van der Drift, P M Sarro, P J French   +4 more
openaire   +1 more source