Results 221 to 230 of about 2,906 (237)
Some of the next articles are maybe not open access.
Electron cyclotron resonance plasma etching of photoresist at cryogenic temperatures
Journal of Applied Physics, 1992An electron cyclotron resonance oxygen plasma discharge was used to anisotropically etch photoresist at a low substrate temperature (−100 °C). The results of using a lower temperature are seen in a reduction in lateral etch rate, with concomitant improvement in anisotropy.
Walter Varhue +2 more
openaire +1 more source
Cryogenic etching of nano-scale silicon trenches with resist masks
Microelectronic Engineering, 2011Cryogenic silicon etching using SF"6-O"2 at the sub-50 nm scale has been developed for nano-electromechanical systems (NEMS) and nano-photonics systems where high aspect ratio trenches are desired. It was found that the SF"6-O"2 chemistry at cryogenic temperatures (-100 to -130^oC) provides the best combination of etch rate, selectivity, and profile ...
Y. Wu +6 more
openaire +1 more source
Cryogenic etching of porous low-k dielectrics in CF3Br and CF4 plasmas
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 2017Low temperature etching of organosilicate low-k dielectrics in CF3Br and CF4 plasmas is studied. The chemical composition of pristine and etched low-k films was measured by Fourier transform infrared spectroscopy. Reduction of plasma-induced damage at low process temperature is observed.
Askar Rezvanov +4 more
openaire +1 more source
Cryogenic etching of positively tapered silicon pillars with controllable profiles
Journal of Vacuum Science & Technology BFabrication of high aspect ratio silicon nanopillars is challenging for various applications. A cryogenic silicon etching process using SF6 and O2 plasma is investigated to create silicon nanopillars with 10 μm height and tens of nanometers apex. In the process, fluorine radicals react with silicon atoms, releasing volatile SiFx byproducts and then ...
Xiaoli Zhu +3 more
openaire +1 more source
Reaction mechanism for HF based cryogenic plasma etching of SiO2
Journal of Vacuum Science & Technology AIn semiconductor device fabrication, increasing the rate and quality of high aspect ratio (HAR) plasma etching is critical for the continuous scaling of three-dimensional (3D) devices. Cryogenic plasma etching (CPE) of SiO2, in which the substrate is cooled to temperatures between −10 and −100 °C, is emerging as a promising approach for achieving high ...
Yeon Geun Yook +3 more
openaire +1 more source
Black silicon formation using cryogenic etching and photoresist layer
Была проведена серия экспериментов по разработке технологии плазменного травления черного кремния через слой полидиметилглутаримида (PMGI) фоторезиста. Кремниевые пластины предварительно подвергались жидкой химической обработке. Слой фоторезиста толщиной ~25 нм способствует процессу создания регулярных структур черного кремния на подложках диаметром ...Vyacheslavova, Ekaterina +6 more
openaire +1 more source
Fabrication of nanoelectromechanical resonators using a cryogenic etching technique
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2006N. Nelson-Fitzpatrick +5 more
openaire +1 more source
Cryogenic etching and halogens
Advanced Etch Technology and Process Integration for Nanopatterning XVMingmei Wang +6 more
openaire +1 more source
The Investigation of CF3I For High-Aspect-Ratio Cryogenic Dielectric Etch
2023 China Semiconductor Technology International Conference (CSTIC), 2023Jianqiu Hou +3 more
openaire +1 more source
Cryogenic etching for pattern transfer into silicon of Mix-and-Match structured resist layers
Microelectronic Engineering, 2020Shraddha Supreeti +2 more
exaly