Results 201 to 210 of about 2,906 (237)
Some of the next articles are maybe not open access.
Cryogenic etching and characterization of nano-sized silicon metadevice
Optics Communications, 2023Jindong Wang, Changhong Sun
exaly +2 more sources
Nanofabrication by field-emission scanning probe lithography and cryogenic plasma etching
Microelectronic Engineering, 2018 Building low-power and high-density circuits requires new devices, which can be based for example on single electron effects. Single electron transistors (SET), which can operate at room temperature (RT), are candidates with high potential for the post-CMOS era. However, their fabrication relies typically on a statistical fabrication of quantum dots or
Claudia Lenk +14 more
openaire +2 more sources
Microelectronic Engineering, 2009 International audienceThe dry etching of n-type silicon with p+ doped walls was studied with the cryogenic etching directly after the thermomigration process.
R Dussart, P Ranson
exaly +2 more sources
On the low temperature limits for cryogenic etching: A quasi in situ XPS study
Applied Surface Science, 2023 International audienceThe cryogenic plasma etching of silicon for nano- and microelectromechanical devices is known to show an optimal operating temperature around -100 degrees C.
Felipe Cemin, C Cardinaud
exaly +2 more sources
Numerical Simulation of Cryogenic Etching: Model with Delayed Desorption
Russian Microelectronics, 2021A numerical model of the evolution of the trench profile during cryogenic etching in SF6/O2 plasma based on the cellular representation of the surface state, the Monte Carlo method for calculating particle fluxes, and the scheme of delayed desorption of reaction products is proposed.
M. K. Rudenko +2 more
openaire +1 more source
Guidelines for etching silicon MEMS structures using fluorine high-density plasmas at cryogenic temperatures [PDF]
Journal of Microelectromechanical Systems, 2002 This paper presents guidelines for the deep reactive ion etching (DRIE) of silicon MEMS structures, employing SF6/O2-based high-density plasmas at cryogenic temperatures.
M J De Boer +2 more
exaly +2 more sources
ICP cryogenic dry etching for shallow and deep etching in silicon
SPIE Proceedings, 2009We achieved to etch nano- and deep structures in silicon using ICP-cryogenic dry etching process. We etched nanopores and nanocantilevers with an etch rate of 13 nm/min, nanopillars with an etch rate of 2.8 μm/min - 4.0 μm/min, membrane and cantilever structures with an etch rate of 4 μm/min and 3 μm/min, respectively.
Ü. Sökmen +6 more
openaire +1 more source
Cryogenic reactive ion etching of silicon in SF6
Applied Physics Letters, 1990Reactive ion etching of Si and SiO2 in SF6 plasmas in which the samples are mounted on a liquid-nitrogen-cooled electrode has been studied. At this temperature SF6 condenses on the electrode surface, but it is possible to maintain a plasma. Si etch anisotropy has been demonstrated at low temperature, in agreement with previous studies.
Tim D. Bestwick +2 more
openaire +1 more source
Cryogenic electron cyclotron resonance plasma etching
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1992A cryogenic electron cyclotron resonance (ECR) plasma etching system has been built to study wafer temperature in the Si etching characteristics. The wafer temperature was controlled from −150 to +30 °C during etching using the liquid nitrogen cooled helium gas.
Ki Woong Whang +2 more
openaire +1 more source
Etching as a Method for Fabricating a Cryogenic Store *)
IFAC Proceedings Volumes, 1965Abstract Vacuum evaporation through stencil masks as a method of fabricating superconductive circuits is unlikely to achieve the packing densities necessary for economic exploitation; in addition, the circuit elements produced do not have ideal characteristics.
L.J. Page, R.A. Scantlebury
openaire +1 more source