Results 201 to 210 of about 17,122 (236)
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Cryogenic reactive ion etching of silicon in SF6
Applied Physics Letters, 1990Reactive ion etching of Si and SiO2 in SF6 plasmas in which the samples are mounted on a liquid-nitrogen-cooled electrode has been studied. At this temperature SF6 condenses on the electrode surface, but it is possible to maintain a plasma. Si etch anisotropy has been demonstrated at low temperature, in agreement with previous studies.
Tim D. Bestwick +2 more
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Cryogenic electron cyclotron resonance plasma etching
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1992A cryogenic electron cyclotron resonance (ECR) plasma etching system has been built to study wafer temperature in the Si etching characteristics. The wafer temperature was controlled from −150 to +30 °C during etching using the liquid nitrogen cooled helium gas.
Ki Woong Whang +2 more
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Etching as a Method for Fabricating a Cryogenic Store *)
IFAC Proceedings Volumes, 1965Abstract Vacuum evaporation through stencil masks as a method of fabricating superconductive circuits is unlikely to achieve the packing densities necessary for economic exploitation; in addition, the circuit elements produced do not have ideal characteristics.
L.J. Page, R.A. Scantlebury
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The role of physisorption in the cryogenic etching process of silicon
Japanese Journal of Applied Physics, 2019Abstract The growth mechanism of the passivation layer in the cryogenic process used for silicon deep etching is explored experimentally in an inductively coupled plasma reactor. In particular, the role of SiF 4 etching by-products on the SiO
G. Antoun +10 more
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Super-selective cryogenic etching for sub-10 nm features
Nanotechnology, 2012Plasma etching is a powerful technique for transferring high-resolution lithographic masks into functional materials. Significant challenges arise with shrinking feature sizes, such as etching with thin masks. Traditionally this has been addressed with hard masks and consequently additional costly steps.
Zuwei, Liu +3 more
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Anisotropic Etching of a Novalak‐Based Polymer at Cryogenic Temperature
Journal of The Electrochemical Society, 1997A radio-frequency induction plasma etcher with cryogenic capabilities has been used to achieve anisotropic etching of a novolak photosensitive polymer with pure oxygen. At -100°C wafer chuck temperature, etching profiles and etching residues were observed at various power and pressure conditions.
R. Hsiao +6 more
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Cryogenic etching of silicon compounds using a CHF3 based plasma
Journal of Applied Physics, 2023Cryogenic etching of a-Si, SiO2, and Si3N4 materials by CHF3/Ar inductively coupled plasma is investigated in a range of temperature from −140 to +20 °C. Samples of the three different materials are placed together on the same silicon carrier wafer. Depending on the experimental conditions, etching or deposition regimes were obtained on the samples ...
R. Dussart +5 more
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Chemically Etched Cryogenic Micro Structure Heat Exchanger
Heat Transfer: Volume 2, 2005A tandem 4 K pulse tube refrigerator requires a recuperator to be fully accomplished. The recuperator should be a counter-flow heat exchanger which has micro heat-transfer structure like a regenerator of cryogenic refrigerators. However, the technology of such a heat exchanger is not well established yet.
Jeheon Jung, Sangkwon Jeong
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Mix-and-match lithography and cryogenic etching for NIL template fabrication
Microelectronic Engineering, 2020Abstract Field Emission Scanning Probe Lithography (FE-SPL) is an enabling technology for prototyping of sub-10 nm high-performance electronic devices. However, due to the serial writing scheme this technology is rather slow. The purpose of this work is the demonstration of a mix-and-match process in combination with cryogenic etching in order to ...
Martin Hofmann +8 more
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Cryogenic dry etching for high aspect ratio microstructures
[1993] Proceedings IEEE Micro Electro Mechanical Systems, 2002Cryogenic reactive ion etching (RIE) has been used to fabricate microstructures. The cryogenic system has a cathode stage that is temperature controlled from 0 to -140 degrees C. A magnetic field and a narrow gap between electrodes are introduced to increase plasma density.
K. Murakami +3 more
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