Results 11 to 20 of about 189 (135)
The chalcopyrite CuInSe2 thin film synthesized via a low temperature solid state reaction from CuSe and InSe powders was investigated using X-ray diffractomy (XRD), scanning electron microscope (SEM), energy dispersive spectrometer (EDS), transmission ...
Kuo-Chin Hsu +4 more
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Effects of growth technique on the microstructure of CuInSe2 ternary semiconductor compound
X-ray diffraction (XRD) and Energy-dispersive X-ray fluorescence spectrometer (EDXRF) are employed to investigate the microstructure of bulk CuInSe2 specimens grown through the Bridgman technique and traveling heater process, respectively. We investigate
M. Mobarak +3 more
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Synthesis of CuInSe2 thin films from electrodeposited Cu11In9 precursors by two-step annealing [PDF]
In this study, copper indium selenide (CIS) films were synthesized from electrodeposited Cu-In-Se precursors by two-step annealing. The agglomeration phenomenon of the electrodeposited In layer usually occurred on the Cu surface.
TSUNG-WEI CHANG, SHAO-YU HU, WEN-HSI LEE
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Structural and optical modeling of electro deposited CuInSe2 thin films
The ternary semiconductor CuInSe2 is one of the most advantageous materials for the manufacturing of thin film solar cells. In this study, CuInSe2 thin films were prepared at room temperature using the electrodepositing method. The as-prepared films were
Bessaïs B., Boujmil M. F., Ferhi S.
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CuInSe2 quantum dots grown by molecular beam epitaxy on amorphous SiO2 surfaces
The currently most efficient polycrystalline solar cells are based on the Cu(In,Ga)Se2 compound as a light absorption layer. However, in view of new concepts of nanostructured solar cells, CuInSe2 nanostructures are of high interest.
Henrique Limborço +8 more
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Inverted Metamorphic III–V Triple-Junction Solar Cell with a 1 eV CuInSe2 Bottom Subcell
A new triple-junction solar cell (3J) design exploiting the highly absorptive I–III–VI chalcopyrite CuInSe2 material is proposed as an alternative to III–V semiconductor 3J solar cells. The proposed structure consists of GaInP (1.9 eV)/Ga(In)As (1.4 eV)/
A. W. Walker +3 more
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Overcoming spectral limits of perovskite photodetectors for the infrared region
Infrared (IR) photodetectors are vital for modern optoelectronics, but traditional inorganic semiconductors face limitations in cost, processing, and bandgap tunability. This review provides a summary of advanced strategies to extend metal halide perovskites into the IR region, categorizing approaches into intrinsic material engineering, physical ...
Jiean Li +4 more
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End‐of‐life photovoltaic (PV) panels are reduced into fine particles and incorporated into epoxy composites, enabling sustainable energy‐storage materials with enhanced dielectric performance. The resulting composites achieve up to 25% increased energy storage capacity at 30°C and up to 45× improvement at elevated temperatures, promoting low‐cost ...
Charalampos Pavlopoulos +7 more
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Electron-beam-induced current (EBIC) measurements have been employed for the investigation of the local electrical properties existing at various types of electrical junctions during the past decades.
D. Abou-Ras +4 more
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Two-terminal (2-T) and four-terminal (4-T) tandem solar cells with wide bandgap perovskite (MAPbI3) as the top sub-cell and low bandgap copper indium diselenide (CuInSe2, CIS) as the bottom sub-cell have potential to outperform the single-junction power ...
Ajeet Kumar Singh +4 more
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