International Journal of Photoenergy, 2013 CuInSe2 (CIS) thin films are successfully prepared by electron beam evaporation. Pure Cu, In, and Se powders were mixed and ground in a grinder and made into a pellet.
H. Abdullah, S. Habibi
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Analysis of S-rich CuIn(S,Se)2 layers for photovoltaic applications: Influence of the sulfurization temperature on the crystalline properties of electrodeposited and sulfurized CuInSe2 precursors [PDF]
, 2012 This paper reports the microstructural analysis of S-rich CuIn(S,Se)2 layers produced by electrodeposition of CuInSe2 precursors and annealing under sulfurizing conditions as a function of the temperature of sulfurization.
Bermudez, V. +9 more
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Effects of growth technique on the microstructure of CuInSe2 ternary semiconductor compound
Heliyon, 2020 X-ray diffraction (XRD) and Energy-dispersive X-ray fluorescence spectrometer (EDXRF) are employed to investigate the microstructure of bulk CuInSe2 specimens grown through the Bridgman technique and traveling heater process, respectively. We investigate
M. Mobarak +3 more
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International Journal of Photoenergy, 2013 The chalcopyrite CuInSe2 thin film synthesized via a low temperature solid state reaction from CuSe and InSe powders was investigated using X-ray diffractomy (XRD), scanning electron microscope (SEM), energy dispersive spectrometer (EDS), transmission ...
Kuo-Chin Hsu +4 more
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Synthesis of CuInSe2 thin films from electrodeposited Cu11In9 precursors by two-step annealing [PDF]
Journal of Electrochemical Science and Engineering, 2014 In this study, copper indium selenide (CIS) films were synthesized from electrodeposited Cu-In-Se precursors by two-step annealing. The agglomeration phenomenon of the electrodeposited In layer usually occurred on the Cu surface.
TSUNG-WEI CHANG, SHAO-YU HU, WEN-HSI LEE
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Transient and modulated charge separation at CuInSe2/C60 and CuInSe2/ZnPc hybrid interfaces
Applied Surface Science, 2017 AbstractSpectral dependent charge transfer and exciton dissociation have been investigated at hybrid interfaces between inorganic polycrystalline CuInSe2 (untreated and Na-conditioned) thin films and organic C60 as well as zinc phthalocyanine (ZnPc) layers by transient and modulated surface photovoltage measurements.
von Morz , N. +4 more
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Structural and optical modeling of electro deposited CuInSe2 thin films
EPJ Web of Conferences, 2012 The ternary semiconductor CuInSe2 is one of the most advantageous materials for the manufacturing of thin film solar cells. In this study, CuInSe2 thin films were prepared at room temperature using the electrodepositing method. The as-prepared films were
Bessaïs B., Boujmil M. F., Ferhi S.
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Excitation power and temperature dependence of excitons in CuInSe2 [PDF]
, 2012 Excitonic recombination processes in high quality CuInSe2 single crystals have been studied by photoluminescence (PL) and reflectance spectroscopy as a function of excitation powers and temperature.
Faugeras, C. +5 more
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CuInSe2 quantum dots grown by molecular beam epitaxy on amorphous SiO2 surfaces
Beilstein Journal of Nanotechnology, 2019 The currently most efficient polycrystalline solar cells are based on the Cu(In,Ga)Se2 compound as a light absorption layer. However, in view of new concepts of nanostructured solar cells, CuInSe2 nanostructures are of high interest.
Henrique Limborço +8 more
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Accurate Band Gaps for Semiconductors from Density Functional Theory [PDF]
, 2011 An essential issue in developing semiconductor devices for photovoltaics and thermoelectrics is to design materials with appropriate band gaps plus the proper positioning of dopant levels relative to the bands.
Goddard, William A., III +2 more
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