Results 11 to 20 of about 2,444,475 (338)
Proximity Gettering Design of Hydrocarbon–Molecular–Ion–Implanted Silicon Wafers Using Dark Current Spectroscopy for CMOS Image Sensors [PDF]
Sensors, 2019 We developed silicon epitaxial wafers with high gettering capability by using hydrocarbon−molecular−ion implantation. These wafers also have the effect of hydrogen passivation on process-induced defects and a barrier to out-diffusion of ...
Kazunari Kurita +7 more
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Development of Low Parasitic Light Sensitivity and Low Dark Current 2.8 μm Global Shutter Pixel [PDF]
Sensors, 2018 : We developed a low parasitic light sensitivity (PLS) and low dark current 2.8 μm global shutter pixel. We propose a new inner lens design concept to realize both low PLS and high quantum efficiency (QE).
Toshifumi Yokoyama +5 more
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Analysis of Dark Current in BRITE Nanostellite CCD Sensors [PDF]
Sensors (Basel), 2018 Adam Popowicz
openalex +3 more sources
IEEE Open Journal of the Communications Society, 2021 Optical beam center position on an array of detectors is an important parameter that is essential for estimating the angle-of-arrival of the incoming signal beam.
Muhammad Salman Bashir +2 more
doaj +1 more source
Photostability Improvement of Organic Photodiodes with ZnO Electron Transport Layer
Advanced Photonics Research, 2023 The stable performance of organic photodiodes (OPDs) is crucial for realizing reliable photosensing and their facile integration into larger systems. However, OPDs with the commonly used ZnO electron transport layer (ETL) suffer from photoinstability ...
Theodorus Jonathan Wijaya +5 more
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Sensors, 2023 The application of TiO2 nanorods in the field of ultraviolet (UV) photodetectors is hindered by a high dark current, which is attributed to crystal surface defects and intrinsic excitation by carrier thermal diffusion.
Yupeng Zhang +7 more
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Fully Depleted, Trench-Pinned Photo Gate for CMOS Image Sensor Applications
Sensors, 2020 Tackling issues of implantation-caused defects and contamination, this paper presents a new complementary metal−oxide−semiconductor (CMOS) image sensor (CIS) pixel design concept based on a native epitaxial layer for photon detection, charge ...
Francois Roy +10 more
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Applied Sciences, 2022 In this paper, we report on temperature dependence performances of a midwave infrared (MWIR) Ga-free InAs/InAsSb type-II superlattice (T2SL) barrier (XBn) photodetector grown by molecular beam epitaxy on n-type GaSb substrate.
Maxime Bouschet +6 more
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Absorption of fermionic dark matter by nuclear targets [PDF]
, 2020 Absorption of fermionic dark matter leads to a range of distinct and novel signatures at dark matter direct detection and neutrino experiments. We study the possible signals from fermionic absorption by nuclear targets, which we divide into two classes ...
Dror, JA, Elor, G, McGehee, R
core +2 more sources
“GeSn Rule-23”—The Performance Limit of GeSn Infrared Photodiodes
Sensors, 2023 Group-IV GeSn photodetectors (PDs) compatible with standard complementary metal–oxide-semiconductor (CMOS) processing have emerged as a new and non-toxic infrared detection technology to enable a wide range of infrared applications.
Guo-En Chang, Shui-Qing Yu, Greg Sun
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