Results 281 to 290 of about 20,723,044 (331)
Some of the next articles are maybe not open access.
MRS Proceedings, 1985
AbstractThe physics of deep levels is reviewed, with emphasis on the qualitative physics that has been elucidated as a result of the ideas of Lannoo, Lenglart, Hjalmarson, Vogl, Wolford, Hsu, Sankey, Allen, and others.
openaire +1 more source
AbstractThe physics of deep levels is reviewed, with emphasis on the qualitative physics that has been elucidated as a result of the ideas of Lannoo, Lenglart, Hjalmarson, Vogl, Wolford, Hsu, Sankey, Allen, and others.
openaire +1 more source
Deep-Level Transient Spectroscopy
2018This chapter discusses deep-level transient spectroscopy (DLTS). After describing the DLTS theory, it also discusses different methods to analyze the recorded transients and how background illumination can help to assign levels to the same defect structure.
Johan Lauwaert, Samira Khelifi
openaire +1 more source
High Pressure Research, 1992
Abstract The influence of hydrostatic pressure on vanadiumrelated acceptor level in GaAs has been investigated in order to test the possibility of using it as a suitable reference level in heterojunctions. The impedance measurements made on GaAs:V/Ni Schottky barriers give its pressure coefficient of +110 meV/GPa with respect to the conduction band ...
Jan Zeman +2 more
openaire +1 more source
Abstract The influence of hydrostatic pressure on vanadiumrelated acceptor level in GaAs has been investigated in order to test the possibility of using it as a suitable reference level in heterojunctions. The impedance measurements made on GaAs:V/Ni Schottky barriers give its pressure coefficient of +110 meV/GPa with respect to the conduction band ...
Jan Zeman +2 more
openaire +1 more source
1990
The deep level centers are determined by a short range potential in a tight binding approximation. Several models are discussed from a simple square well model with added Coulomb well (hydrogen model) for higher energy states. Typical donors and acceptors in different materials are depicted.
openaire +1 more source
The deep level centers are determined by a short range potential in a tight binding approximation. Several models are discussed from a simple square well model with added Coulomb well (hydrogen model) for higher energy states. Typical donors and acceptors in different materials are depicted.
openaire +1 more source
Silver related deep levels in silicon
Physica Status Solidi (a), 1988The properties of silver impurity levels in silicon are studied. Activation enthalpies of 0.56 eV from the conduction band for the acceptor level and 0.33 eV from the valence band for the donor level are determined using C(U) and DLTS. The directly measured thermal electron capture cross section of the acceptor level equals to σn = 3.0 × 10−16 cm2 and ...
Pandian, V, Kumar, V
openaire +1 more source
Advances in Physics, 1980
Abstract All defects which are dominated by short-range forces belong to the family of ‘deep’ impurities and exhibit distinctly different properties from the familiar shallow donors and acceptors, where the decisive term is the Coulomb potential. Whereas formation of the shallow states relates to a small part of the Brillouin zone and can be described ...
openaire +1 more source
Abstract All defects which are dominated by short-range forces belong to the family of ‘deep’ impurities and exhibit distinctly different properties from the familiar shallow donors and acceptors, where the decisive term is the Coulomb potential. Whereas formation of the shallow states relates to a small part of the Brillouin zone and can be described ...
openaire +1 more source
2020
Deep levels in GaN are summarized. E1 and E3 electron traps at the respective energies of around EC − 0.25 eV and EC − 0.6 eV have been commonly observed in n-type GaN layers. H1 hole trap at around EV + 0.9 eV is reported in both n-type and p-type GaN layers, and likely associates the yellow luminescence band in a photoluminescence spectrum.
Tetsuo Narita, Yutaka Tokuda
openaire +1 more source
Deep levels in GaN are summarized. E1 and E3 electron traps at the respective energies of around EC − 0.25 eV and EC − 0.6 eV have been commonly observed in n-type GaN layers. H1 hole trap at around EV + 0.9 eV is reported in both n-type and p-type GaN layers, and likely associates the yellow luminescence band in a photoluminescence spectrum.
Tetsuo Narita, Yutaka Tokuda
openaire +1 more source
Deep Continuous Fusion for Multi-sensor 3D Object Detection
European Conference on Computer Vision, 2018In this paper, we propose a novel 3D object detector that can exploit both LIDAR as well as cameras to perform very accurate localization. Towards this goal, we design an end-to-end learnable architecture that exploits continuous convolutions to fuse ...
Ming Liang +3 more
semanticscholar +1 more source
Physica Status Solidi (a), 1979
The properties of iron-doped GaP crystals are investigated using double injection methods of p–i–n diodes, absorption, and luminescence. Current–voltage characteristics are observed (probably for the first time in GaP) with N- and S-like parts. The results allow to estimate the energy of ionized iron acceptors to 0.87 eV. [Russian Text Ignored].
L. A. Demberel +3 more
openaire +1 more source
The properties of iron-doped GaP crystals are investigated using double injection methods of p–i–n diodes, absorption, and luminescence. Current–voltage characteristics are observed (probably for the first time in GaP) with N- and S-like parts. The results allow to estimate the energy of ionized iron acceptors to 0.87 eV. [Russian Text Ignored].
L. A. Demberel +3 more
openaire +1 more source
Deep level transient spectroscopy characterization of tungsten-related deep levels in silicon
Journal of Applied Physics, 1991Deep level transient spectroscopy is used to determine the deep levels introduced by tungsten in the silicon band gap. The experimental results indicate that tungsten creates three defect centers, with levels at Ev+0.22 eV, Ev+0.33 eV, and Ec−0.59 eV. The shape of the concentration profiles indicates that W does not diffuse by a simple mechanism in Si.
S. Boughaba, D. Mathiot
openaire +1 more source