Results 231 to 240 of about 8,725 (286)

Electrolytic Bubble Coalescence on Hydrophobic Cavity Arrays Determines Departure Radius and Lowers Electrolyte Supersaturation. [PDF]

Small
Raman A, Schlautmann S, Gardeniers H, Fernández Rivas D.   +3 more
europepmc   +1 more source

Reactive lithium fluoride revitalizes bulk-interface Na-ion transport in all-solid-state PEO-based sodium batteries. [PDF]

Chem Sci
Fan Y, Zhao B, Zou X, Zhao W, Zhang Y, Zhu M, Zhang H, Hong Z, Cheng X, Chen P, Bai Z, Shen Y, Tang Y.   +12 more
europepmc   +1 more source

CO2/SF6-based Deep Reactive Ion Etching of Si

Sensors and Materials
Akihiro Matsutani, Mina Sato, Miho Fujimoto, Mie Tohnishi   +3 more
openaire   +1 more source

Ultra-Precise Dispensing for Rapid and Flexible Through-Silicon Via Filling. [PDF]

Materials (Basel)
Szczotka N, Nashashibi S, Motyka A, Drozdek S, Leuthold J, Malecha K.   +5 more
europepmc   +1 more source

Deep reactive ion etching as a tool for nanostructure fabrication

Journal of Vacuum Science & Technology B, 2009
Deep reactive ion etching (DRIE) is investigated as a tool for the realization of nanostructures and architectures, including nanopillars, silicon nanowires or carbon nanotubes on Si nanopillars, nanowalls, and nanonetworks. The potential of combining top-down fabrication methods with the bottom-up synthesis of one-dimensional nanocomponents is ...
A Colli, Jikui Luo, Andrew J Flewitt
exaly   +3 more sources

Deep Reactive Ion Etching of Silicon

MRS Proceedings, 1998
AbstractThe ability to etch deep trenches in silicon while controlling not only the profile of etched features but also the etching rate, uniformity and selectivity enable us to expand the number and scope of MEMS devices. In fact, the increase of MEMS applications in different and varied fields requiring deep silicon etching or high aspect ratio ...
A. A. Ayón, K.-S Chen, K. A. Lohner, S. M. Spearing, H. H. Sawin, M. A. Schmidt   +5 more
openaire   +2 more sources

Deep reactive ion etching for photonic crystals

, 2021
Photonic crystals are powerful tools to control light by a photonic band gap, analogous to the band gap in semiconductors. A functional class of photonic crystals can be fabricated by etching nanopores in silicon with controlled shape, size and reproducibility. These nanopores are created by deep reactive ion etching.
Goodwin, Melissa Jane, Vos, Willem L., Harteveld, Cornelis A.M.   +2 more
openaire   +2 more sources

Spatial variation of the etch rate for deep etching of silicon by reactive ion etching

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1997
The macroscopic uniformity of deep etching into silicon by reactive ion etching (RIE) with a SF6−O2 plasma was studied. The spatial variation of the etch rate across a 4 inch wafer in a single wafer system is a function of the process parameters and the configuration of the etch chamber.
Bo Asp Mo/ller Andersen, Ole Hansen, Martin Kristensen   +2 more
openaire   +2 more sources

Tapered Deep Reactive Ion Etching: Method and Characterization

TRANSDUCERS 2007 - 2007 International Solid-State Sensors, Actuators and Microsystems Conference, 2007
This work presents a method for etching tapered sidewalls in silicon using deep reactive ion etching. The method is based on consecutive switching between anisotropic etching using the Bosch process and isotropic dry etching. By controlling the etch depths of the anisotropic and isotropic etch sessions, the sidewall angle can be controlled over a ...
Niclas Roxhed, Patrick Griss, Goran Stemme   +2 more
openaire   +2 more sources