Results 1 to 10 of about 11,297 (192)

Reduced Etch Lag and High Aspect Ratios by Deep Reactive Ion Etching (DRIE) [PDF]

open access: goldMicromachines, 2021
Deep reactive ion etching (DRIE) with the Bosch process is one of the key procedures used to manufacture micron-sized structures for MEMS and microfluidic applications in silicon and, hence, of increasing importance for miniaturisation in biomedical ...
Michael S. Gerlt   +4 more
doaj   +14 more sources

Deep Reactive Ion Etching (DRIE) of High Aspect Ratio SiC Microstructures Using a Time-Multiplexed Etch-Passivate Process [PDF]

open access: greenMaterials Science Forum, 2006
High aspect ratio silicon carbide (SiC) microstructures are needed for microengines and other harsh environment micro-electro-mechanical systems (MEMS). Previously, deep reactive ion etching (DRIE) of low aspect ratio (AR ≤1) deep (>100 *m) trenches in SiC has been reported. However, existing DRIE processes for SiC are not well-suited for definition
Laura J. Evans, Glenn M. Beheim
exaly   +9 more sources

Effect of process parameters on the surface morphology and mechanical performance of silicon structures after deep reactive ion etching (DRIE) [PDF]

open access: closedJournal of Microelectromechanical Systems, 2002
The ability to predict and control the influence of process parameters during silicon etching is vital for the success of most MEMS devices. In the case of deep reactive ion etching (DRIE) of silicon substrates, experimental results indicate that etch performance as well as surface morphology and post-etch mechanical behavior have a strong dependence ...
Chen, Kuo-Shen   +3 more
exaly   +6 more sources

Metasurface Fabrication by Cryogenic and Bosch Deep Reactive Ion Etching

open access: yesMicromachines, 2021
The research field of metasurfaces has attracted considerable attention in recent years due to its high potential to achieve flat, ultrathin optical devices of high performance. Metasurfaces, consisting of artificial patterns of subwavelength dimensions,
Angela M. Baracu   +7 more
doaj   +4 more sources

Optimization of deep reactive ion etching for microscale silicon hole arrays with high aspect ratio

open access: yesMicro and Nano Systems Letters, 2022
During deep reactive ion etching (DRIE), microscale etch masks with small opening such as trenches or holes suffer from limited aspect ratio because diffusion of reactive ions and free radicals become progressively difficult as the number of DRIE cycle ...
Taeyeong Kim, Jungchul Lee
doaj   +2 more sources

On-Chip Non-Dispersive Infrared CO2 Sensor Based on an Integrating Cylinder [PDF]

open access: yesSensors, 2019
In this paper, we propose a novel, miniaturized non-dispersive infrared (NDIR) CO2 sensor implemented on a silicon chip. The sensor has a simple structure, consisting of a hollow metallic cylindrical cavity along with access waveguides.
Xiaoning Jia   +3 more
doaj   +4 more sources

Optimization Method for the Synergistic Control of DRIE Process Parameters on Sidewall Steepness and Aspect Ratio [PDF]

open access: yesMicromachines
Deep Reactive Ion Etching (DRIE), as a key process in silicon micromachining, remains constrained in high-precision applications by sidewall angle deviation and aspect ratio limitations.
Dandan Wang   +8 more
doaj   +2 more sources

AI-driven feature recognition of SEM profiles in deep reactive ion etching based on physics-constrained variational autoencoder [PDF]

open access: yesMicrosystems & Nanoengineering
Deep reactive ion etching (DRIE) is critical for fabricating high-aspect-ratio structures in microelectromechanical systems (MEMS), yet its complex, parameter-dependent process poses significant optimization challenges.
Fang Wang   +6 more
doaj   +2 more sources

Fabrication of Air Cavity Structures Using DRIE for Acoustic Signal Confinement in FBAR Devices [PDF]

open access: yesMicromachines
Acoustic energy penetrates into the Si substrate at cavity boundaries. Due to this, the air cavity-based bulk acoustic resonators experience higher harmonic mode, parasitic resonance, and spurious mode.
Raju Patel   +3 more
doaj   +2 more sources

A Fabrication Method for Realizing Vertically Aligned Silicon Nanowires Featuring Precise Dimension Control [PDF]

open access: yesSensors
Silicon nanowires (SiNWs) have garnered considerable attention in the last few decades owing to their versatile applications. One extremely desirable aspect of fabricating SiNWs is controlling their dimensions and alignment.
Sourav Mukherjee   +3 more
doaj   +2 more sources

Home - About - Disclaimer - Privacy