Results 11 to 20 of about 2,694 (179)
Characterization and Modeling of Wafer and Die Level Uniformity in Deep Reactive Ion Etching (DRIE)
MRS Proceedings, 2003 ABSTRACTWafer and die level uniformity effects in Deep Reactive Ion Etching (DRIE) are quantitatively modeled and characterized. A two-level etching model has been developed to predict non-uniformities in high-speed rotating microstructures. The separation of wafer level and die level effects is achieved by sequentially etching wafers with uniformly ...
Hongwei Sun +3 more
openaire +2 more sources
Fabrication of High-Density Multimodal Neural Probes Based on Heterogeneously Integrated CMOS. [PDF]
Adv Sci (Weinh)A chiplet‐based methodology democratizes active neural probe development on standard bulk CMOS services. This yields the first probe combining high‐density electrophysiology (416 electrodes) with calcium imaging (832 photodiodes) and complete on‐chip signal processing across 13 shanks.
Mun JH +10 more
europepmc +2 more sources
Micro and Nano Systems Letters, 2020 Deep reactive-ion etching (DRIE) is commonly used for high aspect ratio silicon micromachining. However, scalloping, which is the result of the alternating Bosch process of DRIE, can cause many problems in the subsequent process and degrade device ...
Jin Soo Park +7 more
doaj +1 more source
Optimization of deep reactive ion etching for microscale silicon hole arrays with high aspect ratio
Micro and Nano Systems Letters, 2022 During deep reactive ion etching (DRIE), microscale etch masks with small opening such as trenches or holes suffer from limited aspect ratio because diffusion of reactive ions and free radicals become progressively difficult as the number of DRIE cycle ...
Taeyeong Kim, Jungchul Lee
doaj +1 more source
A two-level prediction model for deep reactive ion etch (DRIE) [PDF]
18th IEEE International Conference on Micro Electro Mechanical Systems, 2005. MEMS 2005., 2005 The authors contribute a quantitative and systematic model to capture etch non-uniformity in deep reactive ion etch of MEMS devices. Non-uniformity depends on uneven distributions of ion and neutral species at the wafer level, and local consumption at the die level.
Taylor, Hayden K. +4 more
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Actuators, 2023 Anode bonding is a widely used method for fabricating devices with suspended structures, and this approach is often combined with deep reactive-ion etching (DRIE) for releasing the device; however, the DRIE process with a glass substrate can potentially ...
Junduo Wang +4 more
doaj +1 more source
Etch mechanism of an Al2O3 hard mask in the Bosch process
Micro and Nano Engineering, 2022 The etching of high aspect ratio structures in silicon via the Bosch process is essential in modern technologies such as microelectromechanical systems (MEMS) and through‑silicon vias (TSV) fabrication.
Martin Drost +7 more
doaj +1 more source
Nano-Micro Letters, 2021 Out-of-plane microneedle structures are widely used in various applications such as transcutaneous drug delivery and neural signal recording for brain machine interface.
Hyeonhee Roh +6 more
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ICP Etching of Silicon for Micro and Nanoscale Devices [PDF]
, 2010 The physical structuring of silicon is one of the cornerstones of modern microelectronics and integrated circuits. Typical structuring of silicon requires generating a plasma to chemically or physically etch silicon.
Henry, Michael David
core +1 more source
Micromachines, 2018 Through via holes in fused silica are a key infrastructure element of microwave and millimeter-wave circuits and 3D integration. In this work, etching through via holes in ultra-thin fused silica wafers using deep reactive-ion etching (DRIE) and laser ...
Xiao Li, King Yuk Chan, Rodica Ramer
doaj +1 more source