Results 251 to 260 of about 8,725 (286)

Deep reactive ion etching of silicon using an aluminum etching mask

SPIE Proceedings, 2003
A method for fast and efficient deep anisotropic etching of bulk silicon, using a parallel capacitively coupled plasma is presented. The effect of the masking materials and RIE conditions are discussed. Based on the experimental results, a 1000 angstrom thick Al film sufficiently protects the unexposed substrate while allowing the etching of a 350mm ...
null Wei-Chih Wang, J.N. Ho, P. Reinhall
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Investigation of Gaas Deep Etching by Using Reactive Ion Etching Technique

MRS Proceedings, 1991
ABSTRACTRIE is an important technique in obtaining anisotropie etch profile. This is a critical requirement for very deep etching which needs long etch duration. Among many factors which affect RIE characteristics in deep etching, the following are most concerned: (1) the etch mask: needs suitable plasma resistance without significant plasma attack for
Kuen-Sane Din, Gou-Chung Chi
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Diamond Microstructuring by Deep Anisotropic Reactive Ion Etching

physica status solidi (a), 2018
Fabrication of diamond micro‐patterned structures is a technological challenge due to the outstanding hardness and chemical stability of the material. In this work, the synthetic diamond reactive ion etching (RIE) process is studied. The effects of the gas mixture and bias on the diamond etching rate are investigated.
Anton V. Golovanov, Vitaly S. Bormashov, Nikolay V. Luparev, Sergey A. Tarelkin, Sergey Y. Troschiev, Sergei G. Buga, Vladimir D. Blank   +6 more
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Cyclic deep reactive ion etching with mask replenishment

Journal of Micromechanics and Microengineering, 2007
A multi-step reactive ion etching (MS-RIE) process for silicon was developed for the fabrication of deep anisotropic, closely packed structures with vertical sidewalls. This process used repeated cycles of etching and the replenishment of masking layers, similar to the Bosch process (Laermer and Schilp 1996 US Patent 5,498,312) [1] that is employed in ...
T N Adam, S Kim, P-C Lv, G Xuan, S K Ray, R T Troeger, D Prather, J Kolodzey   +7 more
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Formation of deep holes in silicon by reactive ion etching

Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1987
Anisotropic etching for the formation of deep holes in the single crystalline silicon has been reported. This technique uses a film deposited on the sidewall to inhibit the lateral etching caused by the bombardment of ions which impinge on the silicon substrate out of the vertical direction.
Kado Hirobe, Ko-ichirou Kawamura, Kazuo Nojiri   +2 more
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Silicon Germanium as a novel mask for silicon deep reactive ion etching

2012 IEEE 25th International Conference on Micro Electro Mechanical Systems (MEMS), 2012
This paper reports on the use of p-type polycrystalline silicon germanium (poly-Si1-xGex) thin films as a new masking material for the cryogenic deep reactive ion etching (DRIE) of silicon. We investigated the etching behavior of various poly-Si1-xGex:B (0 1:800).
Serry, Mohamed Y., Rubin, Andrew, Ibrahem, Mohammed Aziz, Sedky, Sherif M.   +3 more
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Aspect ratio dependent etching in advanced deep reactive ion etching of quartz

2017 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP), 2017
Quartz due to its piezoelectricity and its good temperature stability is one of the most used materials in devices for time-frequency applications. Quartz resonators are generally obtained by chemical etching or chemical mechanical polishing but these two methods do not allow the shrinking of the dimensions of the devices and limit reachable geometry ...
P. Chapellier, P. Lavenus, B. Bourgeteau-Verlhac, C. Gageant, O. Le Traon, B. Dulmet   +5 more
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Process characterisation of deep reactive ion etching for microfluidic application

International Journal of Nanotechnology, 2018
The goal of this paper is to investigate the influence of parameters of the Bosch deep reactive ion etching (DRIE) process on etched surface profile, sidewall profile and etch rate of micrometre silicon features. By investigating these parameters, we found the conditions to obtain smooth sidewall, high etch rate and balance of chemical and physical ...
Chien Mau Dang, Ngan Nguyen Le, Khanh Kim Huynh, Hue Cam Thi Phan, Dung My Thi Dang, Eric Fribourg Blanc   +5 more
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Challenges, developments and applications of silicon deep reactive ion etching

Microelectronic Engineering, 2003
High etching speed, good uniformity and profile control, high aspect ratio capabilities and reliable notching suppression at dielectric interfaces are key requirements in the industrial application of silicon DRIE processing. An optimized hardware for balanced RF drive at high power levels (3 kW) of the inductive plasma source in combination with ...
F. Laermer, A. Urban
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Characterization of the microloading effect in deep reactive ion etching of silicon

SPIE Proceedings, 2004
Knowledge of the magnitude and characteristic length scales of chip-scale process variations due to varying substrate pattern density is essential if compensation measures, such as incorporation of dummy structures, are to be taken during mask layout.
Soren Jensen, Ole Hansen
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