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Deep reactive ion etching characteristics of a macromachined chemical reactor
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2003While deep reactive ion etching using an inductively coupled plasma (ICP) source has proven to be a boon to the fabrication of silicon-based microelectromechanical systems, the process is highly sensitive to the geometry of any given device and needs to be modified accordingly.
R. S. Besser, W. C. Shin
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DEEP REACTIVE ION ETCHING FOR PILLAR TYPE NANOPHOTONIC CRYSTAL
International Journal of Nanoscience, 2005Experimental results and techniques developed for time multiplexed deep reactive ion etching of nano-photonic crystals are presented. Specifically, the high aspect ratio pillar type two-dimensional photonic crystal (PhC) structure on silicon is fabricated and studied for its high potential in application to lightwave circuits and also for discussion ...
SELIN H. G. TEO +5 more
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Deep reactive ion etching of through silicon vias
2008This chapter contains sections titled: • Introduction• DRIE Equipment and Characterization• DRIE Processing• Practical Solutions in Via Etching• Concluding Remarks• Appendix A: Glossary of Abbreviations• Appendix B: Examples of DRIE Recipes ...
Roozeboom, Fred +9 more
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Deep Reactive Ion Etched Submicron Beam/Trench Characterization
Micro-Electro-Mechanical Systems (MEMS), 2001Abstract Sub-micron width high aspect ratio beam/trench arrays are etched into silicon substrates using a Surface Technology Systems (STS) deep reactive ion etch (RIE) tool equipped with a time multiplexed plasma etch/passivation cycle scheme.
Gary O’Brien, Xing Cheng, L. J. Guo
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Deep Reactive Ion Etching of Polyimide for Microfluidic Applications
Journal of the Korean Physical Society, 2007T. N. T. Nguyen, N.-E. Lee
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Silicon fusion bonding and deep reactive ion etching: a new technology for microstructures
Sensors and Actuators A: Physical, 1996Joseph Brown, Gregory T A Kovacs
exaly

